Search Results - "Drouin, Dominique A"
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Uprooting defects to enable high-performance III–V optoelectronic devices on silicon
Published in Nature communications (20-09-2019)“…The monolithic integration of III-V compound semiconductor devices with silicon presents physical and technological challenges, linked to the creation of…”
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Journal Article -
2
Fast growth synthesis of mesoporous germanium films by high frequency bipolar electrochemical etching
Published in Electrochimica acta (01-04-2017)“…Mesoporous germanium (MP-Ge) has been predicted to play an important role in a wide range of potential applications. These porous Ge networks are characterized…”
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3
Metallic Single Electron Transistors: Impact of Parasitic Capacitances on Small Circuits
Published in IEEE transactions on electron devices (01-12-2017)“…A method of simulating metallic-island single electron transistors (SETs) and small circuits which speeds up the design-fabrication-characterization cycle is…”
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4
Source Separation Using Sensor's Frequency Response: Theory and Practice on Carbon Nanotubes Sensors
Published in Sensors (Basel, Switzerland) (02-08-2019)“…Nowadays, there is an increased demand in integrated sensors for electronic devices. Multi-functional sensors provide the same amount of data using fewer…”
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5
Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs
Published in Nanoscale research letters (01-12-2016)“…We have performed a detailed characterization study of electrochemically etched p-type GaAs in a hydrofluoric acid-based electrolyte. The samples were…”
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6
Ba0.6Sr0.4TiO3 Thin Films Deposited by Spray Coating for High Capacitance Density Capacitors
Published in Physica status solidi. A, Applications and materials science (06-12-2018)“…Metal‐insulator‐metal (MIM) capacitors with Ba0.6Sr0.4TiO3 (BST) thin films as insulating layers are fabricated using a novel, fast, and low‐cost method. On…”
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7
Fabrication of top-down gold nanostructures using a damascene process
Published in Microelectronic engineering (05-06-2017)“…In this work, we propose a damascene process to fabricate embedded gold micro- and nano-structures at the same time. We present a systematic study of the…”
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8
In‐Memory Vector‐Matrix Multiplication in Monolithic Complementary Metal–Oxide–Semiconductor‐Memristor Integrated Circuits: Design Choices, Challenges, and Perspectives: Review
Published in Advanced intelligent systems (01-11-2020)“…Mining big data to make predictions or decisions is the main goal of modern artificial intelligence (AI) and machine learning (ML) applications. Vast…”
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9
High sensitivity pH sensing on the BEOL of industrial FDSOI transistors
Published in Solid-state electronics (01-08-2017)“…•FDSOI transistors as pH sensors with a 23nm silicon nitride sensing layer.•pH tests in the range of pH 6 to 8 on transistors controlled via the back gate.•Vt…”
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10
Novel Concept of Gas Sensitivity Characterization of Materials Suited for Implementation in FET-Based Gas Sensors
Published in Nanoscale research letters (01-12-2016)“…We propose a novel technique to investigate the gas sensitivity of materials for implementation in field-effect transistor-based gas sensors. Our technique is…”
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11
Inductively coupled plasma etching of ultra-shallow Si3N4 nanostructures using SF6/C4F8 chemistry
Published in Microelectronic engineering (15-06-2015)“…A reproducible inductively coupled plasma (ICP) etching process using simultaneously SF 6 /C 4 F 8 gases for the fabrication of ultra-shallow Si 3 N 4…”
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12
A manufacturable process for single electron charge detection, a step towards quantum computing
Published in 2016 46th European Solid-State Device Research Conference (ESSDERC) (01-09-2016)“…This paper presents the fabrication, electrical characterization, and simulation of planar single electron transistors. Two single electron transistors facing…”
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Conference Proceeding -
13
Development of ultrasensitive extended-gate Ion-sensitive-field-effect-transistor based on industrial UTBB FDSOI transistor
Published in 2017 47th European Solid-State Device Research Conference (ESSDERC) (01-09-2017)“…The proof of concept of a new extended-gate pH sensor, developed on an industrial ultrathin body and buried oxide (UTBB) fully-depleted silicon-on-insulator…”
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Conference Proceeding -
14
Ultrahigh-Sensitive CMOS pH Sensor Developed in the BEOL of Standard 28 nm UTBB FDSOI
Published in IEEE journal of the Electron Devices Society (01-01-2018)“…This paper reports ultrahigh-sensitive and ultralow-power CMOS compatible pH sensors that are developed in the back-end-of-line (BEOL) of industrial 28-nm…”
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15
Multi-physics Modelling and Experimental Investigation - An Original Approach for Laser-Dicing/Grooving Process Optimization
Published in 2019 IEEE 69th Electronic Components and Technology Conference (ECTC) (01-05-2019)“…The highly complex technology requirements of today's integrated circuits (ICs), lead to the increasingly use of several materials types such as metal…”
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Conference Proceeding -
16
2D Magnetic Inductors for DC-DC Converters on Glass Interposer
Published in 2018 IEEE 68th Electronic Components and Technology Conference (ECTC) (01-05-2018)“…On-chip integration of voltage regulators could significantly improve performance of 3D ICs. However, integration of voltage regulators is difficult due to the…”
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Conference Proceeding -
17
Fabrication of 2D and 3D inductors for DC-DC converters integrated on glass interposer
Published in 2018 Pan Pacific Microelectronics Symposium (Pan Pacific) (01-02-2018)“…Inductors are a key component for voltage regulators and its on-chip integration could significantly improve their performance and scalability capabilities…”
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Conference Proceeding -
18
Smart Packaging: A Micro-Sensor Array Integrated to a Flip-Chip Package to Investigate the Effect of Humidity in Microelectronics Package
Published in 2017 IEEE 67th Electronic Components and Technology Conference (ECTC) (01-05-2017)“…Lifetime reliability of electronics package is important for long term operation of microelectronic devices. Humidity, temperature and resulting strain are…”
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Conference Proceeding -
19
III-V Multi-Junction Solar Cells on Si Substrates with a Voided Ge Interface Layer: A Modeling Study
Published in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) (01-06-2018)“…Multi-junction solar cell efficiencies far exceed those attainable with silicon photovoltaics; however, the high cost of materials remains a barrier to their…”
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Conference Proceeding -
20
HfOx complementary resistive switches
Published in 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC) (01-10-2016)“…This paper proposes the fabrication, together with morphological and electrical characterizations of complementary resistive switches using a nanodamascene…”
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Conference Proceeding