Search Results - "Drobny, V.F."

Doping characteristics of BF/sub 2//sup +/ implants in >100< and >111< silicon by Drobny, V.F., Rubalcava, J.

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Doping characteristics of BF/sub 2//sup +/ implants in and silicon by Drobny, V.F., Rubalcava, J.

“…Significant differences were noticed between doping characteristics of BF/sub 2//sup +/ implanted [100] and [111] silicon. High dose BF/sub 2//sup +/ implants…”
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Doping characteristics of BF2+ implants in [left angle bracket]100[right angle bracket] and [left angle bracket]111[right angle bracket] silicon by Drobny, V.F, Rubalcava, J

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Nearly ideal unguarded vanadium-silicide Schottky-barrier diodes by Drobny, V.F.

“…Nearly ideal VLSI unguarded Schottky-barrier diodes were made using a VSi 2 /nSi junction. The reverse-current leakage of these diodes is fully explained in…”
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Relationship between junction radius and reverse leakage of silicide Schottky-barrier diodes by Drobny, V.F.

“…Unguarded Schottky-barrier diodes exhibit excessive leakage current in the reverse-current direction. A portion of this excess current has always been…”
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Activation behavior of BF2+ implants in RTP annealed silicon by Drobny, V.F., Chang, K., Robinson, D.

“…The sheet resistance (R s ) initially decreases with increasing BF 2 + dose for implants exceeding the amorphization dose. This trend reverses after the…”
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Process and device performance of a high-speed double poly-Si bipolar technology using borosenic-poly process with coupling-base implant by Yamaguchi, T., Yu, Y.-C.S., Lane, E.E., Lee, J.S., Patton, E.E., Herman, R.D., Ahrendt, D.R., Drobny, V.F., Yuzuriha, T.H., Garuts, V.E.

“…Use of boron and arsenic diffusions through an emitter polysilicon film (borosenic-poly emitter-base process) produces a transistor base width of less than…”
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Emitter resistance and performance tradeoff of submicrometer self-aligned double-polysilicon bipolar devices by Yamaguchi, T., Yu, Y.-C.S., Drobny, V.F., Witkowski, A.M.

“…The emitter resistance of polysilicon emitter bipolar transistors with an emitter area ranging from 0.6*2.4 mu m/sup 2/ to 3.4*10.4 mu m/sup 2/ has been…”
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IVB-5 nearly-ideal unguarded VLSI Schottky-barrier diodes by Drobny, V.F., Perino, S.C., Rose, R.E.

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Planarized self-aligned double-polysilicon bipolar technology by Drobny, V.F., Hacherl, C., Dotarrar, S., Yamaguchi, T., Tang, A., Yu, Y.-S.

“…The combination of self-aligned double-polysilicon bipolar technology with the trench isolation technique and planarized field oxide and polysilicon regions…”
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