Search Results - "Drigo, AV"

Dissolution kinetics of boron-interstitial clusters in silicon by Mirabella, S., Bruno, E., Priolo, F., De Salvador, D., Napolitani, E., Drigo, A. V., Carnera, A.

“…In this work, we have investigated the stoichiometry of boron-interstitial clusters (BICs) produced in a molecular-beam-epitaxy-grown B box by Si implantation…”
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Lattice parameter in Si1−yCy epilayers: Deviation from Vegard’s rule by Berti, M., De Salvador, D., Drigo, A. V., Romanato, F., Stangl, J., Zerlauth, S., Schäffler, F., Bauer, G.

“…The precise C content of a series of Si1−yCy epilayer samples (0<y<0.012) was determined by resonant backscattering experiments using a He+4 ion beam at 5.72…”
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Matrix effects in SIMS depth profiles of SiGe relaxed buffer layers by Sánchez-Almazán, F., Napolitani, E., Carnera, A., Drigo, A.V., Isella, G., von Känel, H., Berti, M.

“…The combined use of Rutherford backscattering spectrometry and secondary ion mass spectroscopy allowed a complete characterization of a set of SiGe relaxed…”
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Nitrogen-induced hindering of In incorporation in InGaAsN by Rubini, S., Bais, G., Cristofoli, A., Piccin, M., Duca, R., Nacci, C., Modesti, S., Carlino, E., Martelli, F., Franciosi, A., Bisognin, G., De Salvador, D., Schiavuta, P., Berti, M., Drigo, A. V.

“…We compare the In content of quaternary In x Ga 1 − x As 1 − y N y and ternary In x Ga 1 − x As layers grown by plasma-assisted molecular beam epitaxy in…”
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Structural characterization of InGaAs/InP heterostructures grown under compressive and tensile stress by Salviati, G., Ferrari, C., Lazzarini, L., Nasi, L., Drigo, A.V., Berti, M., De Salvador, D., Natali, M., Mazzer, M.

“…A systematic study of strain relaxation mechanisms by TEM, XRD, RBS-channelling, SEM-CL and AFM in In x Ga 1− x As/InP heterostructures grown by MOCVD under…”
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Diffusion of ion beam injected self-interstitial defects in silicon layers grown by molecular beam epitaxy by De Salvador, D., Napolitani, E., Mirabella, S., Impellizzeri, G., Priolo, F., Terrasi, A., Bisognin, G., Berti, M., Drigo, A.V., Carnera, A.

“…In this work the silicon self-interstitial (I) diffusion in trap-containing molecular beam epitaxy Si layers is investigated. The I’s are produced by Si ion…”
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Strain effect on interatomic distances in InGaAs/InP epitaxial layers by Tormen, M., De Salvador, D., Boscherini, F., Romanato, F., Drigo, A.V., Mobilio, S.

“…Using X-ray absorption fine structure spectroscopy (XAFS) with synchrotron radiation, we have performed an in-depth study on the strain-induced deformations in…”
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Charge storage and screening of the internal field in GaN/AlGaN quantum wells by Traetta, G., Di Carlo, A., Reale, A., Lugli, P., Lomascolo, M., Passaseo, A., Cingolani, R., Bonfiglio, A., Berti, M., Napolitani, E., Natali, M., Sinha, S.K., Drigo, A.V.

“…The optical spectra of a set of high quality quantum wells, with well characterized structural parameters, are presented here. We propose a quantitative…”
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Self-interstitial diffusion and clustering with impurities in crystalline silicon by Mirabella, S., De Salvador, D., Napolitani, E., Giannazzo, F., Impellizzeri, G., Bisognin, G., Terrasi, A., Raineri, V., Berti, M., Carnera, A., Drigo, A.V., Priolo, F.

“…In this work the diffusion of ion-beam-injected self-interstitials (Is) and their interaction with impurities in crystalline Si are presented. In particular,…”
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Two-dimensional interstitial diffusion in silicon monitored by scanning capacitance microscopy by Giannazzo, F., Mirabella, S., Raineri, V., De Salvador, D., Napolitani, E., Terrasi, A., Carnera, A., Drigo, A.V., Priolo, F.

“…Scanning capacitance microscopy (SCM) has been applied to monitor the two-dimensional (2D) diffusion of Si self- interstitials ( I). A sub-micron laterally…”
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Electronic structure and morphology of SiC films grown on Si(111) using C 60 as a precursor by Schiavuta, P., Cepek, C., Sancrotti, M., Pedio, M., Berti, M., De Salvador, D., Drigo, A.V.

“…We report on the electronic, compositional and morphological properties of ultra-thin and thick SiC films produced via disruption of C 60 cages onto the…”
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New insight on the interaction and diffusion properties of ion beam injected self-interstitials in crystalline silicon by De Salvador, D., Napolitani, E., Mirabella, S., Giannazzo, F., Raineri, V., Bisognin, G., Berti, M., Carnera, A., Drigo, A.V., Terrasi, A., Priolo, F.

“…The diffusion of ion beam injected self-interstitials (I) and their interaction with impurities in crystalline Si has been investigated and modeled. In…”
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Investigation by synchrotron radiation X-ray topography of lattice tilt formation in partially released InGaAs/GaAs compositionally graded layers by Ferrari, C, Gennari, S, Franchi, S, Lazzarini, L, Natali, M, Romanato, F, Drigo, A.V, Baruchel, J

“…The synchrotron radiation plane wave topography and the Rutherford backscattering technique have been used to investigate the lattice tilts between substrates…”
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Lattice strain relaxation study in the Ga1−xAlxSb/GaSb system by high resolution x-ray diffraction by Bocchi, C., Bosacchi, A., Franchi, S., Gennari, S., Magnanini, R., Drigo, A. V.

“…Lattice strain relaxation has been studied in the Ga1−xAlxSb/GaSb system by analyzing layers with thicknesses ranging between 0.1 and 6 μm and with Al…”
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Carbon precipitation and diffusion in SiGeC alloys under silicon self-interstitial injection by DE SALVADOR, D, COATI, A, NAPOLITANI, E, BERTI, M, DRIGO, A. V, CARROLL, M. S, STURM, J. C, STANGL, J, BAUER, G, LAZZARINI, L

“…In this work we investigate the diffusion and precipitation of supersaturated substitutional carbon in 200-nm-thick SiGeC layers buried under a silicon cap…”
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Diffusion and clustering of supersaturated carbon in SiGeC layers under oxidation by Napolitani, E, De Salvador, D, Coati, A, Berti, M, Drigo, A.V, Carroll, M.S, Sturm, J.C, Stangl, J, Bauer, G, Spinella, C

“…In this work we investigated the diffusion and clustering of supersaturated substitutional carbon in 200 nm thick SiGeC layers buried under a silicon cap layer…”
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Broad-area optical characterization of well-width homogeneity in GaN/AlxGa1−xN multiple quantum wells grown on sapphire wafers by Pomarico, A., Lomascolo, M., Passaseo, A., Cingolani, R., Berti, M., Napolitani, E., Natali, M., Sinha, S. K., Drigo, A. V.

“…We have performed spatially resolved photoluminescence spectroscopy on the entire 2 in. sapphire wafers containing GaN/AlxGa1−xN multiple quantum wells grown…”
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Self-organized growth of ZnTe nanoscale islands on (001)GaAs by Longo, M., Lovergine, N., Mancini, A. M., Passaseo, A., Leo, G., Mazzer, M., Berti, M., Drigo, A. V.

“…The Stransky–Krastanow metalorganic vapor phase epitaxy growth of self-organized ZnTe islands on homoepitaxial (001)GaAs is demonstrated. The −7.4% lattice…”
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Static and dynamic screening of the polarization fields in nitride nanostructures: a theoretical and experimental study by Reale, A., Carlo, A.Di, Lugli, P., Traetta, G., Lomascolo, M., Passaseo, A., Cingolani, R., Bonfiglio, A., Berti, M., Napolitani, E., Natali, M., Sinha, S.K., Drigo, A.V., Vinattieri, A., Colocci, M.

“…We present a combined theoretical and experimental analysis to describe the interplay between polarization field, charge screening and radiative and…”
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MOVPE Growth of Wide Band-Gap II-VI Compounds for Near-UV and Deep-Blue Light Emitting Devices by Lovergine, N., Prete, P., Leo, G., Calcagnile, L., Cingolani, R., Mancini, A. M., Romanato, F., Drigo, A. V.

“…We report on the growth by metalorganic vapour phase epitaxy of high structural and optical quality ZnS, ZnSe and ZnS/ZnSe multiple quantum well (MQW) based…”
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