Search Results - "Driad, R."

Avalanche multiplication in AlGaN-based heterostructures for the ultraviolet spectral range by Hahn, L., Fuchs, F., Kirste, L., Driad, R., Rutz, F., Passow, T., Köhler, K., Rehm, R., Ambacher, O.

“…AlxGa1-xN based avalanche photodiodes grown on sapphire substrate with Al-contents of x = 0.65 and x = 0.60 have been examined under back- and frontside…”
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Broadly tunable hetero-cascading quantum cascade lasers: Design, growth, and external cavity operation by Yang, Q.K., Hugger, S., Aidam, R., Driad, R., Schilling, C., Heußen, H., Kirste, L., Ostendorf, R.

“…•Design and growth of broadly tunable hetero-cascading quantum cascade lasers.•Influence of electric field and interface roughness on the gain…”
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Towards Vertical GaN-Power ICs: Co-integration of Lateral HEMTs and Vertical Power CAVETs by Doring, P., Basler, M., Reiner, R., Monch, S., Driad, R., Dammann, M., Mikulla, M., Quay, R.

“…We report on the development of the co-integration of a common lateral HEMT (high-electron mobility transistor) technology with vertical GaN devices based on a…”
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High-Speed Selector-Driver Using Abrupt Delta-Doped InP/InGaAs/InP DHBTs by Driad, R., Makon, R. E., Ritter, D.

“…This letter reports the potential of an InP-based double-heterojunction bipolar transistor (DHBT) using a thin highly doped n + -InP layer inserted at the…”
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ETDM Transmitter Module for 100-Gb/s Ethernet by Chacinski, M., Westergren, U., Thylen, L., Stoltz, B., Rosenzweig, J., Driad, R., Makon, R.E., Jie Li, Steffan, A.

“…Performance of a packaged distributed-feedback travelling-wave electroabsorption modulator module for data transmission at 100 Gb/s is presented for the first…”
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Crystallographic orientation effects on the performance of InP-based heterojunction bipolar transistors by Driad, R., Lösch, R., Benkhelifa, F., Kuri, M., Rosenzweig, J.

“…We report the crystallographic orientation effects in InP-based heterojunction bipolar transistors (HBTs). The DC and RF characteristics of DHBTs fabricated on…”
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Passivation of InGaAs surfaces and InGaAs/InP heterojunction bipolar transistors by sulfur treatment by Driad, R., Lu, Z. H., Charbonneau, S., McKinnon, W. R., Laframboise, S., Poole, P. J., McAlister, S. P.

“…The surface properties of InGaAs(100) after ex situ treatment with (NH4)2S solution were investigated by photoluminescence (PL) and high-energy resolution…”
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Solid source MBE growth on InP-based DHBTs for high-speed data communication by Aidam, R., Lösch, R., Driad, R., Schneider, K., Makon, R.

“…We report on the development of a double heterojunction bipolar transistor (DHBT) technology on InP substrates for high-speed data communication. The…”
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Comparison of InP/InGaAs DHBT distributed amplifiers as modulator drivers for 80-Gbit/s operation by Schneider, K., Driad, R., Makon, R.E., Massler, H., Ludwig, M., Quay, R., Schlechtweg, M., Weimann, G.

“…This paper compares three single-ended distributed amplifiers (DAs) realized in an in-house InP/InGaAs double heterojunction bipolar transistor technology…”
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InP DHBT-Based Monolithically Integrated CDR/DEMUX IC Operating at 80 Gbit/s by Makon, R.E., Driad, R., Schneider, K., Ludwig, M., Aidam, R., Quay, R., Schlechtweg, M., Weimann, G.

“…In this paper, a monolithically integrated clock and data recovery (CDR) circuit with 1:2 demultiplexer (DEMUX), which is intended for use in 80 Gbit/s optical…”
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InP-based DHBT technology for high-speed mixed signal and digital applications by Driad, R., Makon, R.E., Hurm, V., Benkhelifa, F., Losch, R., Rosenzweig, J., Schlechtweg, M.

“…We report on an InP DHBT-based technology featuring current gains of ~ 90, breakdown voltages of Gt 4.5 V and cut-off frequency (f T ) values of Gt 300 GHz…”
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112 Gb/s field trial of complete ETDM system based on monolithically integrated transmitter & receiver modules for use in 100GbE by Li, J, Schubert, C, Derksen, R H, Makon, R E, Hurm, V, Djupsjöbacka, A, Chacinski, M, Westergren, U, Bach, H.-G, Mekonnen, G G, Steffan, A G, Driad, R, Walcher, H, Rosenzweig, J

“…112 Gb/s field trial demonstration of a complete ETDM system based on monolithically integrated transmitter and receiver modules was achieved for the first…”
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Sensitivity of a 20-GS/s InP DHBT latched comparator by Kraus, S, Makon, R E, Kallfass, I, Driad, R, Moyal, M, Ritter, D

“…We present simulations and measurements of the sensitivity of a master-slave emitter-coupled logic (ECL) latched comparator implemented in an InP/GaInAs DHBT…”
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High linearity 2-bit current steering InP/GaInAs DHBT digital-to-analog converter by Kraus, S, Kallfass, I, Makon, R E, Rosenzweig, J, Driad, R, Moyal, M, Ritter, D

“…We present a high linearity 2-bit digital-to-analog converter (DAC) implemented in an InP/GaInAs DHBT technology. The DAC is based upon the current steering…”
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Characterization of a pin-TWA photoreceiver in OOK-system experiments up to 112 Gb/s by Schubert, C, Li, J, Bach, H.-G, Mekonnen, G G, Makon, R E, Derksen, R H, Hurm, V, Djupsjöbacka, A, Chacinski, M, Westergren, U, Steffan, A G, Driad, R

“…A high-speed pin-TWA photoreceiver, comprising a photodiode and a travelling-wave amplifier, monolithically integrated on a single InP chip, are characterized…”
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Thermodynamics of GaNyAs1-y growth by metalorganic vapor phase epitaxy by GUPTA, J. A, MCKINNON, W. R, NOAD, J, COULAS, D, WILLIAMS, R. L, DRIAD, R, MCALISTER, S. P

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Interpretation of the common-emitter offset voltage in heterojunction bipolar transistors by McAlister, S.P., McKinnon, W.R., Driad, R.

“…The offset voltage in heterojunction bipolar transistors (HBTs) can be read graphically from a plot combining the forward Gummel and reverse Gummel plots. We…”
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Oxygen plasma induced degradation in InGaAs/InP heterostructures by Driad, R., McKinnon, W. R., McAlister, S. P.

“…The effects of oxygen plasma conditions on the performance of InGaAs/InP heterostructure bipolar transistors (HBTs) have been studied by comparing the HBT’s…”
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Passivation of InP-based HBTs by Driad, R, Laframboise, S.R, Lu, Z.H, McAlister, S.P, McKinnon, W.R

“…The passivation of the exposed semiconductor surfaces in a device is necessary to ensure good device performance. In this study we examine how different…”
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Multiwafer solid source phosphorus MBE on InP for DHBTs and aluminum free lasers by Aidam, R., Losch, R., Walther, M., Driad, R., Kallenbach, S.

“…InP-based double heterojunction bipolar transistors (DHBTs) and aluminum free 14xx nm high power lasers were grown in a multiwafer solid source phosphorus…”
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