Planarized self-aligned double-polysilicon bipolar technology

Planarized self-aligned double-polysilicon bipolar technology

The combination of self-aligned double-polysilicon bipolar technology with the trench isolation technique and planarized field oxide and polysilicon regions results in a high-performance bipolar VLSI process, planarized at all mask levels. The planarization approach simplifies photolithography. It a...

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Bibliographic Details
Published in:Proceedings of the 1988 Bipolar Circuits and Technology Meeting pp. 115 - 116
Main Authors: Drobny, V.F., Hacherl, C., Dotarrar, S., Yamaguchi, T., Tang, A., Yu, Y.-S.
Format: Conference Proceeding
Language:English
Published: IEEE 1988
Subjects:
Boron
Implants
Isolation technology
Metallization
Oxidation
Process design
Resistors
Schottky diodes
Surface topography
Very large scale integration
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Summary:The combination of self-aligned double-polysilicon bipolar technology with the trench isolation technique and planarized field oxide and polysilicon regions results in a high-performance bipolar VLSI process, planarized at all mask levels. The planarization approach simplifies photolithography. It also eliminates deformation and discontinuities of polysilicon lines over severe topography and problems with polysilicon residue after RIE steps. A SWAMI process is used to define and isolate both polysilicon layers.< >
DOI:10.1109/BIPOL.1988.51059