Search Results - "Dosho, Chisei"

Defects Introduced by MeV-Energy Ion Implantation into Si Probed by a Monoenergetic Positron Beam by Uedono, Akira, Wei, Long, Dosho, Chisei, Kondo, Hitoshi, Tamura, Shoichiro Tanigawa

“…Vacancy-type defects in 2-MeV B + -, 2-MeV P + - and 3-MeV As + -ion implanted Si(100) were studied by a monoenergetic positron beam. The depth distributions…”
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Defects in metalorganic chemical vapor deposition epitaxy-grown ZnSe films on GaAs investigated by monoenergetic positrons by WEI, L, CHO, Y.-K, DOSHO, C, TANIGAWA, S, YODO, T, YAMASHITA, K

“…Defects in metalorganic chemical vapor deposition epitaxy (MOVPE)-grown ZnSe heteroepilayers on GaAs were investigated by monoenergetic positrons. The present…”
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The defect characterization of heavily Si-doped molecular beam epitaxy-grown GaAs by the monoenergetic positron method by LONG WEI, YANG-KOO CHO, CHISEI DOSHO, KURIHARA, T, TANIGAWA, S

“…Monoenergetic (100 eV-30 keV) positrons were used as a defect probe for heavily Si-doped GaAs with a thickness of 300nm grown by molecular beam epitaxy (MBE)…”
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Variable-energy positron studies of vacancy-type defects in TiN films on Si by WEI, L, DOSHO, C, YANG-KOO CHO, TANIGAWA, S, HINODE, K

“…A variable-energy (0–30 keV) positron beam has been used as a nondestructive probe for titanium nitride (TiN) films with a thickness of 800 nm deposited on Si…”
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Defect Production in Phosphorus Ion-Implanted SiO 2 (43 nm)/Si Studied by a Variable-Energy Positron Beam by Uedono, Akira, Wei, Long, Dosho, Chisei, Kondo, Hitoshi, Tanigawa, Shoichiro, Sugiura, Jun, Ogasawara, Makoto

“…Vacancy-type defects in 150-keV P + -implanted SiO 2 (43 nm)/Si(100) specimens were studied by a variable-energy positron beam. The results show that the…”
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