Search Results - "Dorokhin, M.V."

The features of magnetotransport properties of the Mn δ-doped GaAs structure with multiple conduction channels by Kudrin, A.V., Dorokhin, M.V., Yakovleva, A.A., Vikhrova, O.V., Danilov, Yu.A., Zvonkov, B.N., Ved, M.V., Drozdov, M.N.

“…•Hall resistance in multilayer structures may not reflect the real magnetic properties.•Even in nanostructures the conductivity of each channel must be taken…”
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Thermoelectrical properties of ternary lead chalcogenide plumbum-selenium-tellurium thin films with excess of tellurium prepared by plasma-chemical vapor deposition by Mochalov, L.A., Kuznetsov, Yu.M., Dorokhin, M.V., Fukina, D.G., Knyazev, A.V., Kudryashov, M.A., Kudryashova, Yu.P., Logunov, A.A., Mukhina, O.V., Zdoroveyshchev, A.V., Zdoroveyshchev, D.A.

“…•Pb50Se50-xTex have been fabricated by Plasma-enhanced chemical vapor deposition technique.•The morphology of PbSeTe thin films strongly depends as on the…”
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High-Efficiency Spark Plasma Sintered Ge 0.3 Si 0.7 :P Thermoelectric Energy Converters with Silicone Phosphide as a Source of Phosphorus Doping by Dorokhin, M.V., Kuznetsov, Yu.M., Demina, P.B., Erofeeva, I.V., Zavrazhnov, A.Yu, Boldin, M.S., Lantsev, E.A., Popov, A.A., Boryakov, A.V., Zdoroveyshchev, A.V., Ved, M.V., Zdoroveyshchev, D.A., Korotkova, M.G.

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On the mechanism of cross-hatch pattern formation in heterostructures with a small lattice mismatch by Kovalskiy, V.A., Eremenko, V.G., Vergeles, P.S., Soltanovich, O.A., Khodos, I.I., Dorokhin, M.V., Danilov, Yu.A.

“…The mechanism of cross-hatch (CH) pattern formation on the surface of GaMnAs/InGaAs/GaAs (001) heterostructures with a small lattice mismatch, related to the…”
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Effect of pulsed laser annealing on the properties of (Ga,Mn)As layers by Kalentyeva, I.L., Vikhrova, O.V., Danilov, Yu.A., Dorokhin, M.V., Zvonkov, B.N., Kuznetsov, Yu.M., Kudrin, A.V., Khomitsky, D.V., Parafin, A.E., Yunin, P.A., Danilov, D.V.

“…•Ferromagnetic (Ga,Mn)As layers were obtained by pulsed laser deposition and annealing.•Results of X-ray diffraction, TEM and the magnetization study are…”
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Tunneling and injection in ferromagnetic structures InGaAs/GaAs by Malysheva, E.I, Dorokhin, M.V, Zdoroveyshchev, A.V, Ved', M.V

“…The spin light-emitting diodes based on InGaAs/GaAs heterostructures with a quantum well and an injector in the form of a (Ga,Mn)As ferromagnetic layer have…”
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GaAs diodes for TiT2-based betavoltaic cells by Dorokhin, M.V., Vikhrova, O.V., Demina, P.B., Kalentyeva, I.L., Vergeles, P.S., Yakimov, E.B., Lesnikov, V.P., Zvonkov, B.N., Ved, M.V., Danilov, Yu.A., Zdoroveyshchev, A.V.

“…The GaAs semiconductor structures for the application as betavoltaic power sources were investigated. Three types of structures underwent a comparative study:…”
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Formation of epitaxial p-i-n structures on the basis of (In,Fe)Sb and (Ga,Fe)Sb diluted magnetic semiconductors layers by Kudrin, A.V., Lesnikov, V.P., Pavlov, D.A., Usov, Yu.V., Danilov, Yu.A., Dorokhin, M.V., Vikhrova, O.V., Milin, V.E., Kriukov, R.N., Kuznetsov, Yu.M., Trushin, V.N., Sobolev, N.A.

“…Multilayer structures on the basis of n-type (In,Fe)Sb and p-type (Ga,Fe)Sb diluted magnetic semiconductors (DMS) along with separate (In,Fe)Sb and (Ga,Fe)Sb…”
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Robustness of ferromagnetism in (In,Fe)Sb diluted magnetic semiconductor to variation of charge carrier concentration by Kudrin, A.V., Lesnikov, V.P., Danilov, Yu.A., Dorokhin, M.V., Vikhrova, O.V., Pavlov, D.A., Usov, Yu.V., Antonov, I.N., Kriukov, R.N., Zubkov, S.Yu, Nikolichev, D.E., Konakov, A.A., Dudin, Yu.A., Kuznetsov, Yu.M., Temiryazeva, M.P., Sobolev, N.A.

“…•Ion irradiation of (In,Fe)Sb allows to control carrier density and Fermi level position.•Ion irradiation of (In,Fe)Sb leads to conductivity type conversion…”
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The nature of transport and ferromagnetic properties of the GaAs structures with the Mn δ-doped layer by Kudrin, A.V., Vikhrova, O.V., Danilov, Yu.A., Dorokhin, M.V., Kalentyeva, I.L., Konakov, A.A., Vasiliev, V.K., Pavlov, D.A., Usov, Yu.V., Zvonkov, B.N.

“…•Mn δ-doped GaAs structures have two parallel conduction channels (VB and IB).•Ferromagnetic properties of Mn δ-doped structures determined by electrons within…”
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High-Efficiency Spark Plasma Sintered Ge0.3Si0.7:P Thermoelectric Energy Converters with Silicone Phosphide as a Source of Phosphorus Doping by Dorokhin, M.V., Kuznetsov, Yu.M., Demina, P.B., Erofeeva, I.V., Zavrazhnov, A.Yu, Boldin, M.S., Lantsev, E.A., Popov, A.A., Boryakov, A.V., Zdoroveyshchev, A.V., Ved, M.V., Zdoroveyshchev, D.A., Korotkova, M.G.

“…A spark plasma sintering technology has already become rather common for the fabrication of GexSi1-x nanostructured thermoelectric solid solutions. Such trend…”
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On the crystal structure and thermoelectric properties of thin [Si.sub.1-x][Mn.sub.x] films by Erofeeva, I.V, Dorokhin, M.V, Lesnikov, V.P, Zdoroveishchev, A.V, Kudrin, A.V, Pavlov, D.A, Usov, U.V

“…Thin (25 nm) [Si.sub.1-x][Mn.sub.x]/Si(100) films are fabricated by pulsed laser deposition. According to highresolution transmission electron microscopy data,…”
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Coherent spin dynamics of carriers in ferromagnetic semiconductor heterostructures with an Mn [delta] layer by Zaitsev, S.V, Akimov, I.A, Langerc, L, Danilov, Yu. A, Dorokhin, M.V, Zvonkov, B.N, Yakovlev, D.R, Bayer, M

“…The coherent spin dynamics of carriers in the heterostructures that contain an InGaAs/GaAs quantum well (QW) and an Mn [delta] layer, which are separated by a…”
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Effect of the Dopant Concentration on the Luminescence Properties of InGaAs/GaAs Spin Light-Emitting Diodes with a Mn [delta] Layer by Rykov, A.V, Dorokhin, M.V, Malysheva, E.I, Demina, P.B, Vikhrova, O.V, Zdoroveishev, A.V

“…The luminescence properties of light-emitting diodes based on GaAs/InGaAs heterostructures containing Mn-doped layers are studied. The dependences of the…”
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In-situ Doping of Thermoelectric Materials Based on SiGe Solid Solutions during Their Synthesis by the Spark Plasma Sintering Technique by Dorokhin, M. V., Demina, P. B., Erofeeva, I. V., Zdoroveyshchev, A. V., Kuznetsov, Yu. M., Boldin, M. S., Popov, A. A., Lantsev, E. A., Boryakov, A. V.

“…The results of investigation of thermoelectric materials fabricated by spark plasma sintering and based on Si 1 – x Ge x solid solutions doped with Sb to a…”
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Properties of CoPt ferromagnetic layers for application in spin light-emitting diodes by Zdoroveyshchev, A. V., Dorokhin, M. V., Vikhrova, O. V., Demina, P. B., Kudrin, A. V., Temiryazev, A. G., Temiryazeva, M. P.

“…The magnetic properties of Co 45 Pt 55 films deposited by electron-beam evaporation in vacuum have been studied. The measurements of the Faraday and Kerr…”
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Specific Features of the Electrochemical Capacitance–Voltage Profiling of GaAs LED and pHEMT Structures with Quantum-Confined Regions by Yakovlev, G. E., Dorokhin, M. V., Zubkov, V. I., Dudin, A. L., Zdoroveyshchev, A. V., Malysheva, E. I., Danilov, Yu. A., Zvonkov, B. N., Kudrin, A. V.

“…GaAs light-emitting (LED) and HEMT structures with δ-doped regions, InGaAs/GaAs quantum wells, and surface layers of InAs/GaAs quantum dots were studied by…”
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Circularly polarized electroluminescence of light-emitting InGaAs/GaAs (III, Mn)V diodes on the basis of structures with a tunneling barrier by Malysheva, E. I., Dorokhin, M. V., Ved’, M. V., Kudrin, A. V., Zdoroveishchev, A. V.

“…The comparative investigation of circularly polarized electroluminescence in Zener diodes based on InGaAs/ n -GaAs/ n + -GaAs/GaMnAs and InGaAs/ n -GaAs/ n +…”
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Heterostructures with InGaAs/GaAs quantum dots doped by transition elements. Part I: Photoluminescence properties by Dorokhin, M. V., Zdoroveyshchev, A. V., Malysheva, E. I., Danilov, Yu. A.

“…The optical properties of InGaAs/GaAs quantum dot heterostructures that are doped by manganese and chromium during growth by Metal-organic vapor phase epitaxy…”
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Thermoelectric effects in nanoscale layers of manganese silicide by Erofeeva, I. V., Dorokhin, M. V., Lesnikov, V. P., Kuznetsov, Yu. M., Zdoroveyshchev, A. V., Pitirimova, E. A.

“…The values of the thermoelectric power, layer resistivity and thermal conductivity of a Mn x Si 1– x nanoscale layer and Mn x Si 1– x /Si superlattice on…”
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