Search Results - "Dorofeev, A. M."

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    Light guiding in oxidised porous silicon optical waveguides by Maiello, Gabriella, La Monica, S, Ferrari, A, Masini, G, Bondarenko, V.P, Dorofeev, A.M, Kazuchits, N.M

    Published in Thin solid films (01-04-1997)
    “…Oxidised porous silicon optical waveguides (OPSWG) are fabricated and characterised. Porous silicon, selectively formed on boron-doped silicon substrates, is…”
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    Journal Article
  2. 2

    Time-resolved spectroscopy of visibly emitting porous silicon by Gaponenko, S. V., Germanenko, I. N., Petrov, E. P., Stupak, A. P., Bondarenko, V. P., Dorofeev, A. M.

    Published in Applied physics letters (03-01-1994)
    “…Time-resolved emission spectra and photoluminescence decay kinetics are analyzed in porous Si samples exhibiting a noticeable inhomogeneous broadening under…”
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    Journal Article
  3. 3

    Total gamma dose characteristics of CMOS devices in SOI structures based on oxidized porous silicon by Bondarenko, V.P., Bogatirev, Y.V., Colinge, J.P., Dolgyi, L.N., Dorofeev, A.M., Yakovtseva, V.A.

    Published in IEEE transactions on nuclear science (01-10-1997)
    “…The electrical characteristics of complementary metal-oxide-semiconductor (CMOS) transistors and ring oscillators fabricated in porous silicon…”
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    Journal Article
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    Porous silicon based heterostructures: formation, properties, and application by Bondarenko, V.P., Bondarenko, A.V., Dolgyi, L.N., Dorofeev, A.M., Kazuchits, N.M., Levchenko, V.I., Vorozov, N.N., Volchek, S.A., Troyanova, G.N., Yakovtseva, V.A.

    “…The unique combination of perfect crystalline structure, developed surface, and high activity of porous silicon (PS) provides a real possibility for creation…”
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    Conference Proceeding