Search Results - "Dorofeev, A. M."
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Light guiding in oxidised porous silicon optical waveguides
Published in Thin solid films (01-04-1997)“…Oxidised porous silicon optical waveguides (OPSWG) are fabricated and characterised. Porous silicon, selectively formed on boron-doped silicon substrates, is…”
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Time-resolved spectroscopy of visibly emitting porous silicon
Published in Applied physics letters (03-01-1994)“…Time-resolved emission spectra and photoluminescence decay kinetics are analyzed in porous Si samples exhibiting a noticeable inhomogeneous broadening under…”
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Total gamma dose characteristics of CMOS devices in SOI structures based on oxidized porous silicon
Published in IEEE transactions on nuclear science (01-10-1997)“…The electrical characteristics of complementary metal-oxide-semiconductor (CMOS) transistors and ring oscillators fabricated in porous silicon…”
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The tangent approach to the characterization of the set of singular boundary points for an arbitrary function
Published in Doklady. Mathematics (01-02-2009)Get full text
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Evolution of the current-voltage characteristics of photoluminescing porous silicon during chemical etching
Published in Semiconductors (Woodbury, N.Y.) (01-12-1997)Get full text
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Luminescence of erbium-doped porous silicon
Published in Technical physics letters (01-01-1997)Get full text
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Improving the accuracy of sections made of special steels
Published in Metallurgist (New York) (01-10-1978)Get full text
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Improved rolling practice on the 260 semicontinuous rod mill
Published in Metallurgist (New York) (01-04-1978)Get full text
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Improving the roll design for the 260 semicontinuous mill
Published in Metallurgist (New York) (01-04-1973)Get full text
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Analysis and improvement of roll pass design in continuous groups of the 260 wire mill
Published in Metallurgist (New York) (01-05-1974)Get full text
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Porous silicon based heterostructures: formation, properties, and application
Published in 1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings (1996)“…The unique combination of perfect crystalline structure, developed surface, and high activity of porous silicon (PS) provides a real possibility for creation…”
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