Search Results - "Donchev, V."
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Surface photovoltage spectroscopy of semiconductor materials for optoelectronic applications
Published in Materials research express (01-10-2019)“…The present contribution reviews the basic principles of the surface photovoltage (SPV) spectroscopy in the metal-insulator-semiconductor operation mode…”
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Low-temperature LPE growth and characterization of GaAsSb layers for photovoltaic applications
Published in Journal of crystal growth (15-11-2021)“…•Metamorphic GaAsSb layers on GaAs have been grown by low-temperature LPE.•The incorporation of Sb in the As- sublattice is found to be…”
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Surface photovoltage phase spectroscopy – a handy tool for characterisation of bulk semiconductors and nanostructures
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15-04-2006)“…A new approach is proposed for determining the semiconductor conductivity type (n or p) based on measurements of surface photovoltage (SPV) phase spectra in…”
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Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy
Published in Journal of crystal growth (01-02-2018)“…•The effect of Sb in thick LPE grown InGaAsSbN layers is studied.•A reduction of the band gap energy of InGaAsSbN with respect to InGaAsN is found.•Good…”
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Corrigendum to “Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy” [J. Cryst. Growth 483 (2018) 140–146]
Published in Journal of crystal growth (15-03-2018)Get full text
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Effective Removal of Surface Recombination Centers in Silicon Nanowires Fabricated by Metal-Assisted Chemical Etching
Published in ACS applied energy materials (27-08-2018)“…High-density silicon nanowires (SiNWs) were fabricated on p-Si substrates by metal-assisted chemical etching (MACE). A chemical cleaning with HF/piranha/HF was…”
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Thermal Processes in Electron-Beam Treatment of Metals
Published in Metal science and heat treatment (01-03-2014)“…An amended quasi-stationary model of heat transfer in a metallic ingot hardening in a water-cooled crucible after electron-beam melting and refining of the…”
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The study of vacuum influence on spatial-temporal dependence of thermal distributions during laser-optical components interaction
Published in Vacuum (27-04-2012)“…This paper deals with the evaluation of vacuum influence on the spatial-temporal laser thermal field distributions in optical components during the interaction…”
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Electron states energies and wave functions of V-shaped quantum wires with graded interfaces
Published in Journal of Optoelectronics and Advanced Materials (01-01-2007)“…We have studied the effect of graded interfaces on the bound electron states energies and wave functions of a model V-shaped GaAs/AIGaAs quantum wire (QWR)…”
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Surface photovoltage investigation of GaAs quantum wells
Published in Journal of Optoelectronics and Advanced Materials (01-01-2007)“…We have studied GaAs quantum wells (QWs) embedded in (AlAs)4/(GaAs)8 superlattices (SLs) with graded interfaces by means of surface photovoltage (SPV)…”
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Characterization of thick epitaxial GaAs layers for X-ray detection
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (11-07-2002)“…We have studied the current–voltage and capacitance–voltage characteristics of p/i/n structures made on non-intentionally doped epitaxial GaAs layers grown by…”
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A SURFACE PHOTOVOLTAGE SPECTROSCOPY SYSTEM USED FOR MINORITY CARRIER DIFFUSION LENGTH MEASUREMENTS ON FLOATING ZONE SILICON
Published in Journal of Optoelectronics and Advanced Materials (01-02-2005)“…An original experimental technique for surface photovoltage spectroscopy at temperatures from 65 to 300 K is presented, based on the…”
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Kinetics study on the mechanism of zero-bias photocurrent in semi-insulating bulk GaAs
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15-04-2003)“…The mechanism of zero-bias photocurrent (ZBPC) in semi-insulating GaAs:Cr bulk crystals is studied by kinetics measurements. A simple quantitative model…”
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Effective optical manipulation of the charge state and emission intensity of the InAs∕GaAs quantum dots by means of additional infrared illumination
Published in Applied physics letters (02-08-2004)“…InAs quantum dots (QDs) at different levels of density have been studied by means of photoluminescence, when in addition to the main laser, a second infrared…”
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NUMERICAL SIMULATION OF THE TIME-RESOLVED SURFACE PHOTOVOLTAGE AT Si-SiO2 INTERFACES
Published in Journal of Optoelectronics and Advanced Materials (01-02-2005)“…We present a simple original algorithm for numerical simulation of super-bandgap SPV transients in semiconductors. It is applied to a p-Si/SiO2 interface with…”
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An alternative approach to the electronic-structure calculation of crescent-shaped GaAs/AlGaAs quantum wires
Published in Journal of materials science. Materials in electronics (01-10-2003)“…An alternative approach for calculating the bound states energies in crescent-shaped GaAs/AlGaAs quantum wires is proposed. We consider carrier confinement in…”
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Conference Proceeding Journal Article -
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Photoluminescence study of AlAs/GaAs superlattices containing enlarged wells
Published in Thin solid films (27-03-2000)“…Photoluminescence (PL) spectra of MBE grown short-period AlAs/GaAs superlattices with one or two enlarged wells (5 and 12 nm) have been measured at 2 K. Sharp…”
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Conference Proceeding Journal Article -
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Γ-X Coupling in Diffused AlAs/GaAs Superlattices
Published in Physica status solidi. B. Basic research (01-10-2000)Get full text
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Longitudinal photoconductivity of GaAs/AlGaAs quantum wires
Published in Journal of materials science. Materials in electronics (01-10-2003)“…The photoconductivity (PC) of undoped GaAs/AlGaAs quantum wires (QWRs) along the wire direction is studied for the first time. The PC spectrum reveals a strong…”
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Conference Proceeding Journal Article