Search Results - "Donchev, V."

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  1. 1

    Surface photovoltage spectroscopy of semiconductor materials for optoelectronic applications by V Donchev

    Published in Materials research express (01-10-2019)
    “…The present contribution reviews the basic principles of the surface photovoltage (SPV) spectroscopy in the metal-insulator-semiconductor operation mode…”
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    Journal Article
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    Low-temperature LPE growth and characterization of GaAsSb layers for photovoltaic applications by Donchev, V., Milanova, M., Kirilov, K., Georgiev, S., Kostov, K.L., Piana, G.M., Avdeev, G.

    Published in Journal of crystal growth (15-11-2021)
    “…•Metamorphic GaAsSb layers on GaAs have been grown by low-temperature LPE.•The incorporation of Sb in the As- sublattice is found to be…”
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    Journal Article
  3. 3

    Surface photovoltage phase spectroscopy – a handy tool for characterisation of bulk semiconductors and nanostructures by Donchev, V., Kirilov, K., Ivanov, Ts, Germanova, K.

    “…A new approach is proposed for determining the semiconductor conductivity type (n or p) based on measurements of surface photovoltage (SPV) phase spectra in…”
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    Journal Article
  4. 4

    Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy by Donchev, V., Milanova, M., Asenova, I., Shtinkov, N., Alonso-Álvarez, D., Mellor, A., Karmakov, Y., Georgiev, S., Ekins-Daukes, N.

    Published in Journal of crystal growth (01-02-2018)
    “…•The effect of Sb in thick LPE grown InGaAsSbN layers is studied.•A reduction of the band gap energy of InGaAsSbN with respect to InGaAsN is found.•Good…”
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    Journal Article
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    Effective Removal of Surface Recombination Centers in Silicon Nanowires Fabricated by Metal-Assisted Chemical Etching by Donchev, V, Georgiev, S, Leontis, I, Nassiopoulou, A. G

    Published in ACS applied energy materials (27-08-2018)
    “…High-density silicon nanowires (SiNWs) were fabricated on p-Si substrates by metal-assisted chemical etching (MACE). A chemical cleaning with HF/piranha/HF was…”
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    Journal Article
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    Thermal Processes in Electron-Beam Treatment of Metals by Vutova, K., Donchev, V., Vassileva, V., Mladenov, G.

    Published in Metal science and heat treatment (01-03-2014)
    “…An amended quasi-stationary model of heat transfer in a metallic ingot hardening in a water-cooled crucible after electron-beam melting and refining of the…”
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    Journal Article
  9. 9

    The study of vacuum influence on spatial-temporal dependence of thermal distributions during laser-optical components interaction by Oane, M., Vutova, K., Mihailescu, I.N., Donchev, V., Florescu, G., Munteanu, L., Georgescu, G.

    Published in Vacuum (27-04-2012)
    “…This paper deals with the evaluation of vacuum influence on the spatial-temporal laser thermal field distributions in optical components during the interaction…”
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    Journal Article
  10. 10

    Electron states energies and wave functions of V-shaped quantum wires with graded interfaces by Kirilov, K, Donchev, V, Saraydarov, M, Germanova, K

    “…We have studied the effect of graded interfaces on the bound electron states energies and wave functions of a model V-shaped GaAs/AIGaAs quantum wire (QWR)…”
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    Journal Article
  11. 11

    Surface photovoltage investigation of GaAs quantum wells by Ivanov, Ts, Donchev, V, Kiiulov, K, Germanova, K

    “…We have studied GaAs quantum wells (QWs) embedded in (AlAs)4/(GaAs)8 superlattices (SLs) with graded interfaces by means of surface photovoltage (SPV)…”
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    Journal Article
  12. 12

    Characterization of thick epitaxial GaAs layers for X-ray detection by Samic, H, Sun, G.C, Donchev, V, Nghia, N.X, Gandouzi, M, Zazoui, M, Bourgoin, J.C, El-Abbassi, H, Rath, S, Sellin, P.J

    “…We have studied the current–voltage and capacitance–voltage characteristics of p/i/n structures made on non-intentionally doped epitaxial GaAs layers grown by…”
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    Journal Article
  13. 13

    A SURFACE PHOTOVOLTAGE SPECTROSCOPY SYSTEM USED FOR MINORITY CARRIER DIFFUSION LENGTH MEASUREMENTS ON FLOATING ZONE SILICON by Kirilov, K, Donchev, V, Ivanov, Tz, Germanova, K, Vitanov, P, Ivanov, P

    “…An original experimental technique for surface photovoltage spectroscopy at temperatures from 65 to 300 K is presented, based on the…”
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    Journal Article
  14. 14

    Kinetics study on the mechanism of zero-bias photocurrent in semi-insulating bulk GaAs by Donchev, V., Germanova, K., Saraydarov, M., Dachev, K.

    “…The mechanism of zero-bias photocurrent (ZBPC) in semi-insulating GaAs:Cr bulk crystals is studied by kinetics measurements. A simple quantitative model…”
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    Journal Article
  15. 15

    Effective optical manipulation of the charge state and emission intensity of the InAs∕GaAs quantum dots by means of additional infrared illumination by Moskalenko, E. S., Karlsson, K. F., Donchev, V., Holtz, P. O., Monemar, B., Schoenfeld, W. V., Petroff, P. M.

    Published in Applied physics letters (02-08-2004)
    “…InAs quantum dots (QDs) at different levels of density have been studied by means of photoluminescence, when in addition to the main laser, a second infrared…”
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    Journal Article
  16. 16

    NUMERICAL SIMULATION OF THE TIME-RESOLVED SURFACE PHOTOVOLTAGE AT Si-SiO2 INTERFACES by Kirilov, K, Germanova, K, Donchev, V, Ivanov, Tzv

    “…We present a simple original algorithm for numerical simulation of super-bandgap SPV transients in semiconductors. It is applied to a p-Si/SiO2 interface with…”
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    Journal Article
  17. 17

    An alternative approach to the electronic-structure calculation of crescent-shaped GaAs/AlGaAs quantum wires by SARAYDAROV, M, DONCHEV, V, KIRILOV, K, GERMANOVA, K, SHTINKOV, N

    “…An alternative approach for calculating the bound states energies in crescent-shaped GaAs/AlGaAs quantum wires is proposed. We consider carrier confinement in…”
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    Conference Proceeding Journal Article
  18. 18

    Photoluminescence study of AlAs/GaAs superlattices containing enlarged wells by DONCHEV, V, GERMANOVA, K, SHTINKOV, N, IVANOV, I, VLAEV, S

    Published in Thin solid films (27-03-2000)
    “…Photoluminescence (PL) spectra of MBE grown short-period AlAs/GaAs superlattices with one or two enlarged wells (5 and 12 nm) have been measured at 2 K. Sharp…”
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    Conference Proceeding Journal Article
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    Longitudinal photoconductivity of GaAs/AlGaAs quantum wires by DONCHEV, V, SARAYDAROV, M, GERMANOVA, K, IVANOV, M, WANG, Xue-Lun, OGURA, Mutsuo, KIM, Seong-Jin

    “…The photoconductivity (PC) of undoped GaAs/AlGaAs quantum wires (QWRs) along the wire direction is studied for the first time. The PC spectrum reveals a strong…”
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    Conference Proceeding Journal Article