Search Results - "Dolmanan, S. B."

AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111) by Tripathy, S., Lin, Vivian K. X., Dolmanan, S. B., Tan, Joyce P. Y., Kajen, R. S., Bera, L. K., Teo, S. L., Kumar, M. Krishna, Arulkumaran, S., Ng, G. I., Vicknesh, S., Todd, Shane, Wang, W. Z., Lo, G. Q., Li, H., Lee, D., Han, S.

“…This Letter reports on the epitaxial growth, characterization, and device characteristics of crack-free AlGaN/GaN heterostructures on a 200 mm diameter Si(111)…”
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Comment on “Determination of alloy composition and strain in multiple AlGaN buffer layers in GaN/Si system” [Appl. Phys. Lett. 105 , 232113 (2014)] by Liu, H. F., Dolmanan, S. B., Bhat, T. N., Tripathy, S.

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High-Frequency Microwave Noise Characteristics of InAlN/GaN High-Electron Mobility Transistors on Si (111) Substrate by Arulkumaran, S., Ranjan, K., Ng, G. I., Manoj Kumar, C. M., Vicknesh, S., Dolmanan, S. B., Tripathy, S.

“…We report for the first time high-frequency microwave noise performance on 0.17-μm T-gate In 0.17 Al 0.83 N/GaN high-electron mobility transistors (HEMTs)…”
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Effect of Carbon Doping and Crystalline Quality on the Vertical Breakdown Characteristics of GaN Layers Grown on 200-mm Silicon Substrates by Wang, W. Z., Selvaraj, S. L., Win, K. T., Dolmanan, S. B., Bhat, T., Yakovlev, N., Tripathy, S., Lo, G. Q.

“…We have carried out a systematic study on the vertical breakdown behavior of GaN-based epitaxial layers on 200-mm-diameter Si(111) substrates with different…”
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Probing channel temperature profiles in AlxGa1−xN/GaN high electron mobility transistors on 200 mm diameter Si(111) by optical spectroscopy by Bera, L K, Liu, Y, Bera, M K, Singh, S P, Dolmanan, S B, Tan, H R, Bhat, T N, Chor, E F, Tripathy, S

“…Using micro-Raman and photoluminescence (PL) techniques, the channel temperature profile is probed in AlxGa1-xN/GaN high electron mobility transistors (HEMTs)…”
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Coconut husk-derived biochar for enhancing electrochemical conversion of CO2 by Tan, Y.C., Jia, S., Tan, J., Leow, Y., Zheng, R., Tan, X.Y., Dolmanan, S.B., Zhang, M., Yew, P.Y.M., Ni, X.P., Zhu, Q., Xu, J., Loh, X.J., Ramakrishna, S., Kai, D.

“…Electrochemical reduction of CO2 (CO2RR) is a versatile technology that can produce a wide variety of carbon-based molecules. Coupled with renewable…”
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Al x Ga1-xN/GaN MISHEMTs With a Common Gold-Free Metal-Stack for Source/Drain/Gate by Tham, W. H., Bera, L. K., Ang, D. S., Dolmanan, S. B., Bhat, T. N., Tripathy, S.

“…A low-temperature fabrication of Al x Ga 1-x N/GaN MISHEMTs on a 200-mm GaN-on-Si substrate using a common metal stack (Ti/Al/NiV) for concurrent source,…”
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Al$x$ Ga 1–x N/GaN MISHEMTs With a Common Gold-Free Metal-Stack for Source/Drain/Gate by Tham, W. H., Bera, L. K., Ang, D. S., Dolmanan, S. B., Bhat, T. N., Tripathy, S.

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Al[Formula Omitted]Ga 1-x N/GaN MISHEMTs With a Common Gold-Free Metal-Stack for Source/Drain/Gate by Tham, W H, Bera, L K, Ang, D S, Dolmanan, S B, Bhat, T N, Tripathy, S

“…A low-temperature fabrication of Al[Formula Omitted]Ga 1-x N/GaN MISHEMTs on a 200-mm GaN-on-Si substrate using a common metal stack (Ti/Al/NiV) for concurrent…”
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Formation of Ni Diffusion-Induced Surface Traps in GaN/AlxGa1−xN/GaN Heterostructures on Silicon Substrate During Gate Metal Deposition by Kajen, R. S., Bera, L. K., Tan, H. R., Dolmanan, S. B., Cheong, Z. W., Tripathy, S.

“…The diffusion of the Schottky metal (Ni) in GaN is known to occur at elevated temperatures and as a result of prolonged electric field-driven stress. This…”
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Formation of Ni Diffusion-Induced Surface Traps in GaN/Al^sub x^Ga^sub 1-x^N/GaN Heterostructures on Silicon Substrate During Gate Metal Deposition by Kajen, R S, Bera, L K, Tan, H R, Dolmanan, S B, Cheong, Z W, Tripathy, S

“…Issue Title: Special Sections: Pb-free Solders and Materials for Emerging Interconnect and Packaging Technologies; Phase Stability, Phase Transformations, and…”
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Formation of Ni Diffusion-Induced Surface Traps in GaN/Al x Ga1−x N/GaN Heterostructures on Silicon Substrate During Gate Metal Deposition by Kajen, R. S., Bera, L. K., Tan, H. R., Dolmanan, S. B., Cheong, Z. W., Tripathy, S.

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Probing channel temperature profiles in Al x Ga 1−x N/GaN high electron mobility transistors on 200 mm diameter Si(111) by optical spectroscopy by Kyaw, L. M., Bera, L. K., Liu, Y., Bera, M. K., Singh, S. P., Dolmanan, S. B., Tan, H. R., Bhat, T. N., Chor, E. F., Tripathy, S.

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Probing channel temperature profiles in Al{sub x}Ga{sub 1−x}N/GaN high electron mobility transistors on 200 mm diameter Si(111) by optical spectroscopy by Kyaw, L. M., Institute of Materials Research and Engineering, ASTAR, Bera, L. K., Dolmanan, S. B., Tan, H. R., Bhat, T. N., Tripathy, S., Liu, Y., Bera, M. K., Singh, S. P., Chor, E. F.

“…Using micro-Raman and photoluminescence (PL) techniques, the channel temperature profile is probed in Al{sub x}Ga{sub 1-x}N/GaN high electron mobility…”
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Light emission from tensile-strained n-type epitaxial Ge thin films on Si by ultrahigh vacuum chemical vapor deposition by Ding, L, Lim, Andy En-Jin, Yu, M B, Lo, G Q, Dolmanan, S B, Tripathy, S

“…Recently, Ge has been intensively studied as a light emission material that emits at ~1.5 μm, as it has been theoretically proven to be a promising candidate…”
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Improved OFF-state breakdown voltage in AlGaN/GaN HEMTs grown on 150-mm diameter silicon-on-insulator (SOI) substrate by Arulkumaran, S., Lin, V. K. X., Dolmanan, S. B., Ng, G. I., Vicknesh, S., Tan, J. P. Y., Teo, S. L., Kumar, M. K., Tripathy, S.

“…The AlGaN/GaN-based high-electron-mobility transistors (HEMTs) are suitable for discrete components in many high power and high frequency power electronics…”
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In0.17Al0.83N/AlN/GaN Triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03 A/mm, IOFF=1.13 µA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V by Arulkumaran, S., Ng, G. I., Manojkumar, C. M., Ranjan, K., Teo, K. L., Shoron, O. F., Rajan, S., Dolmanan, S. B., Tripathy, S.

“…We report the first 3D Triple T-gate InAlN/GaN nano-channel (NC) Fin-HEMTs on Si substrate with record high device performances at V D as low as 0.5 V…”
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