Search Results - "Doi, Takahisa"

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  1. 1

    Diffraction microscopy using 20kV electron beam for multiwall carbon nanotubes by Kamimura, Osamu, Kawahara, Kota, Doi, Takahisa, Dobashi, Takashi, Abe, Takashi, Gohara, Kazutoshi

    Published in Applied physics letters (14-01-2008)
    “…Diffraction microscopy with iterative phase retrieval using a 20kV electron beam was carried out to explore the possibility of high-resolution imaging for…”
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    Journal Article
  2. 2

    Stable structures of a Si( [formula omitted]) vicinal surface after alternating current heating up to about 1140 °C by Doi, Takahisa, Ichikawa, Masakazu, Hosoki, Shigeyuki

    Published in Surface science (01-03-2002)
    “…The topography of a Si(0 0 1) vicinal surface is investigated by using reflection electron microscopy after alternating current (AC) heating at temperatures up…”
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  3. 3

    High-temperature MBE growth of Si-Direct current heating effects on (111) and (001) vicinal surfaces by STOYANOV, S. S, ICHIKAWA, M, DOI, T

    Published in Japanese Journal of Applied Physics (01-05-1993)
    “…The molecular beam epitaxial (MBE) growth model is extended to account for the electromigration of Si adatoms on both (001) and (111) Si surfaces. Step…”
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  4. 4

    Formation of double-monolayer-height islands on a Si(001) surface by alternating current heating in molecular beam epitaxy by Doi, Takahisa, Ichikawa, Masakazu, Hosoki, Shigeyuki, Kakibayashi, Hiroshi

    Published in Applied physics letters (14-06-1999)
    “…Molecular beam epitaxy (MBE) of Si atoms onto a Si(001) 1×2 surface is investigated using reflection electron microscopy. A 1×2 surface with wide 1×2 and…”
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  5. 5

    Activation energies of Si adsorbate diffusion on a Si(001) surface by Doi, Takahisa, Ichikawa, Masakazu, Hosoki, Shigeyuki, Ninomiya, Ken

    Published in Surface science (01-12-1995)
    “…The diffusion of Si adsorbates deposited on a Si(001) surface is studied by a reflection electron microscope (REM). The diffusion constants are obtained from…”
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  6. 6

    The driving force of Si adsorbate transfer on a Si(001) surface by Doi, Takahisa, Ichikawa, Masakazu, Hosoki, Shigeyuki

    Published in Applied physics letters (22-07-1996)
    “…The driving force of Si adsorbates deposited on a Si(001) surface is investigated by reflection electron microscopy. When the sample is heated by direct…”
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  7. 7

    Diffraction microscopy using 20 kV electron beam for multiwall carbon nanotubes by Kamimura, Osamu, Doi, Takahisa, Dobashi, Takashi, Kawahara, Kota, Abe, Takashi, Gohara, Kazutoshi

    Published in Applied physics letters (14-01-2008)
    “…Diffraction microscopy with iterative phase retrieval using a 20 kV electron beam was carried out to explore the possibility of high-resolution imaging for…”
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    Journal Article
  8. 8

    Direct observation of electron charge of Si atoms on a Si(001) surface by DOI, T, ICHIKAWA, M

    “…The electron charge of Si adsorbates evaporated on a Si(001)-2×1 surface is studied by tracing their behavior after heating of the substrate. A reflection…”
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  9. 9

    Thermal properties of anisotropic diffusion of Si adsorbates on a Si(001) surface by Doi, Takahisa, Ichikawa, Masakazu, Hosoki, Shigeyuki, Ninomiya, Ken

    Published in Surface science (20-06-1996)
    “…The diffusion of Si adsorbates deposited on a Si(001) clean surface is investigated by using a reflection electron microscope (REM). When the sample is heated…”
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    Journal Article
  10. 10

    Migration of a Si microcluster due to the electron wind on a Si(001) surface by Doi, Takahisa, Ichikawa, Masakazu, Hosoki, Shigeyuki, Ninomiya, Ken

    Published in Applied physics letters (11-03-1996)
    “…At a high temperature of about 1500 K, the migration of a Si microcluster was observed on a Si(001) surface by using an electron microscope. This cluster…”
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  11. 11

    Anisotropic diffusion of Si adsorbates on a Si(001) surface by DOI, T, ICHIKAWA, M

    Published in Japanese Journal of Applied Physics (01-07-1995)
    “…The behavior of Si adsorbates evaporated on a Si(001) surface is studied by tracing their diffusion caused by radiative heating. A reflection electron…”
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  12. 12

    Possibility of a new phase transition in 7×7 structure on clean Si(111) surfaces by ISHIZAKA, A, DOI, T, ICHIKAWA, M

    Published in Applied physics letters (04-03-1991)
    “…Temperature dependences of reflection high-energy electron diffraction intensities are measured for Si(111)-7×7 clean surfaces. The temperature dependences of…”
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  13. 13

    Diffusion constants of Si adsorbates on a Si(001) surface by DOI, T, ICHIKAWA, M, HOSOKI, S, NINOMIYA, K

    Published in Japanese Journal of Applied Physics (01-05-1996)
    “…The thermal diffusion of Si adsorbates deposited on a Si(001) clean surface was investigated using reflection electron microscopy. When the Si sample was…”
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  14. 14

    Observation of Si(001) surface domains in absorption current images of an electron microscope by DOI, T, ICHIKAWA, M, HOSOKI, S

    Published in Japanese Journal of Applied Physics (01-04-1996)
    “…We investigated a Si(001) surface by scanning electron microscopy when an electron beam was incident at grazing angles on it. The absorption current images…”
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  15. 15

    Observation of 1-nm-high structures on a Si(001) surface using a differential interference optical microscope by DOI, T, ISHIZAKA, A, ICHIKAWA, M, HOSOKI, S, NINOMIYA, K

    “…A Si(001) clean surface is oxidized by exposure to air and the step-band structures on the oxidized surface are observed using a differential interference…”
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  16. 16
  17. 17

    Observation of surface micro-structures by micro-probe reflection high-energy electron diffraction by ICHIKAWA, M, DOI, T, ICHIHASHI, M, HAYAKAWA, K

    Published in Japanese Journal of Applied Physics (01-07-1984)
    “…A new micro-probe reflection high-energy electron diffraction technique has been developed for observing micro-structures on crystal surfaces. In this…”
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  18. 18

    Diffraction microscopy using 20 kV electron beam for multiwallcarbon nanotubes by Kamimura, Osamu, Kawahara, Kota, Doi, Takahisa, Dobashi, Takashi, Abe, Takashi, Gohara, Kazutoshi

    Published in Applied physics letters (15-01-2008)
    “…Diffraction microscopy with iterative phase retrieval using a 20 kV electron beam was carried out to explore the possibility of high-resolution imaging for…”
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    Journal Article
  19. 19
  20. 20

    High dose rate effect of focused-ion-beam boron implantation into silicon by TAMURA, M, SHUKURI, S, ISHITANI, T, ICHIKAWA, M, DOI, T

    Published in Japanese Journal of Applied Physics (01-01-1984)
    “…The effect of high-dose-rate, 16 keV focused-ion-beam (FIB) B + implantation into Si has been investigated as a function of current density and beam-scan…”
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