Search Results - "Dodds, N. A."

Effectiveness of SEL Hardening Strategies and the Latchup Domino Effect by Dodds, N. A., Hooten, N. C., Reed, R. A., Schrimpf, R. D., Warner, J. H., Roche, N. J., McMorrow, D., Wen, S., Wong, R., Salzman, J. F., Jordan, S., Pellish, J. A., Marshall, C. J., Gaspard, N. J., Bennett, W. G., Zhang, E. X., Bhuva, B. L.

“…Heavy ion, neutron, and laser experimental data are used to evaluate the effectiveness of various single event latchup (SEL) hardening strategies, including…”
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Selection of Well Contact Densities for Latchup-Immune Minimal-Area ICs by Dodds, N A, Hutson, J M, Pellish, J A, Reed, R A, Kim, H S, Berg, M D, Friendlich, M R, Phan, A M, Seidleck, C M, Xapsos, M A, Deng, X, Baumann, R C, Schrimpf, R D, King, M P, Massengill, L W, Weller, R A

“…Heavy ion data for custom SRAMs fabricated in a 45-nm CMOS technology demonstrate the effects of N- and P-well contact densities on single-event latchup…”
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Charge Generation by Secondary Particles From Nuclear Reactions in BEOL Materials by Dodds, N.A., Reed, R.A., Mendenhall, M.H., Weller, R.A., Clemens, M.A., Dodd, P.E., Shaneyfelt, M.R., Vizkelethy, G., Schwank, J.R., Ferlet-Cavrois, V., Adams, J.H., Schrimpf, R.D., King, M.P.

“…Direct charge collection measurements are presented, which prove that the presence of tungsten near sensitive volumes leads to extreme charge collection events…”
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Single-Event Upsets for Single-Port and Two-Port SRAM Cells at the 5-nm FinFET Technology by Pieper, N. J., Xiong, Y., Pasternak, J., Dodds, N. A., Ball, D. R., Bhuva, B. L.

“…Single-event cross sections of single-port and two-port SRAM designs are presented at the 5-nm node for alpha particles, 14-MeV neutrons, thermal neutrons, and…”
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The Significance of High-Level Carrier Generation Conditions for Charge Collection in Irradiated Devices by Hooten, N. C., Edmonds, L. D., Bennett, W. G., Ahlbin, J. R., Dodds, N. A., Reed, R. A., Schrimpf, R. D., Weller, R. A.

“…Pulsed-laser induced charge-collection measurements in a bulk silicon diode are used to investigate charge collection mechanisms during high-level carrier…”
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The Contribution of Low-Energy Protons to the Total On-Orbit SEU Rate by Dodds, N. A., Martinez, M. J., Dodd, P. E., Shaneyfelt, M. R., Sexton, F. W., Black, J. D., Lee, D. S., Swanson, S. E., Bhuva, B. L., Warren, K. M., Reed, R. A., Trippe, J., Sierawski, B. D., Weller, R. A., Mahatme, N., Gaspard, N. J., Assis, T., Austin, R., Weeden-Wright, S. L., Massengill, L. W., Swift, G., Wirthlin, M., Cannon, M., Liu, R., Chen, L., Kelly, A. T., Marshall, P. W., Trinczek, M., Blackmore, E. W., Wen, S.-J, Wong, R., Narasimham, B., Pellish, J. A., Puchner, H.

“…Low- and high-energy proton experimental data and error rate predictions are presented for many bulk Si and SOI circuits from the 20-90 nm technology nodes to…”
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Hardness Assurance for Proton Direct Ionization-Induced SEEs Using a High-Energy Proton Beam by Dodds, N. A., Schwank, J. R., Shaneyfelt, M. R., Dodd, P. E., Doyle, B. L., Trinczek, M., Blackmore, E. W., Rodbell, K. P., Gordon, M. S., Reed, R. A., Pellish, J. A., LaBel, K. A., Marshall, P. W., Swanson, S. E., Vizkelethy, G., Van Deusen, S., Sexton, F. W., Martinez, M. J.

“…The low-energy proton energy spectra of all shielded space environments have the same shape. This shape is easily reproduced in the laboratory by degrading a…”
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Soft Error Characterization of D-FFs at the 5-nm Bulk FinFET Technology for the Terrestrial Environment by Xiong, Y., Feeley, A., Pieper, N. J., Ball, D. R., Narasimham, B., Brockman, J., Dodds, N. A., Wender, S. A., Wen, S. -J., Fung, R., Bhuva, B. L.

“…Soft error rates (SER) are characterized for the 5-nm bulk FinFET D flip-flops for alpha particles, thermal neutrons, and high-energy neutrons as a function of…”
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New Insights Gained on Mechanisms of Low-Energy Proton-Induced SEUs by Minimizing Energy Straggle by Dodds, N. A., Dodd, P. E., Shaneyfelt, M. R., Sexton, F. W., Martinez, M. J., Black, J. D., Marshall, P. W., Reed, R. A., McCurdy, M. W., Weller, R. A., Pellish, J. A., Rodbell, K. P., Gordon, M. S.

“…We present low-energy proton single-event upset (SEU) data on a 65 nm SOI SRAM whose substrate has been completely removed. Since the protons only had to…”
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Validation of the Variable Depth Bragg Peak Method for Single-Event Latchup Testing Using Ion Beam Characterization by Roche, N. J.-H, Buchner, S. P., Foster, C. C., King, M. P., Dodds, N. A., Warner, J. H., McMorrow, D., Decker, T., OaNeill, P. M., Reddell, B. D., Nguyen, K. V., Samsel, I. K., Hooten, N. C., Bennett, W. G., Reed, R. A.

“…The Variable Depth Bragg Peak method has been investigated for single event latchup testing by comparing latchup cross sections for heavy ions at low and high…”
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The Effects of Nuclear Fragmentation Models on Single Event Effect Prediction by Clemens, M.A., Dodds, N.A., Weller, R.A., Mendenhall, M.H., Reed, R.A., Schrimpf, R.D., Koi, T., Wright, D.H., Asai, M.

“…There is a need for improved physics models to correctly predict single event effects (SEEs) caused by nuclear reaction products from heavy ion radiation…”
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SEL-Sensitive Area Mapping and the Effects of Reflection and Diffraction From Metal Lines on Laser SEE Testing by Dodds, N. A., Hooten, N. C., Reed, R. A., Schrimpf, R. D., Warner, J. H., Roche, N. J.-H, McMorrow, D., Buchner, S., Jordan, S., Pellish, J. A., Bennett, W. G., Gaspard, N. J., King, M. P.

“…Laser and heavy-ion data reveal the areas and shapes of single-event latchup (SEL)-sensitive regions in CMOS test structures and their positions relative to…”
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The Effects of Neutron Energy and High-Z Materials on Single Event Upsets and Multiple Cell Upsets by Clemens, M. A., Sierawski, B. D., Warren, K. M., Mendenhall, M. H., Dodds, N. A., Weller, R. A., Reed, R. A., Dodd, P. E., Shaneyfelt, M. R., Schwank, J. R., Wender, S. A., Baumann, R. C.

“…Neutron-induced charge collection data and computer simulations presented here show that the presence of high-Z materials, like tungsten, can increase the…”
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The Effect of High-Z Materials on Proton-Induced Charge Collection by Clemens, M A, Hooten, N C, Ramachandran, V, Dodds, N A, Weller, R A, Mendenhall, M H, Reed, R A, Dodd, P E, Shaneyfelt, M R, Schwank, J R, Blackmore, E W

“…Charge collection measurements reveal that the presence of high-Z materials increases proton-induced charge collection cross sections for high charge…”
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Alpha-Particle and Focused-Ion-Beam-Induced Single-Event Transient Measurements in a Bulk 65-nm CMOS Technology by Gadlage, M J, Ahlbin, J R, Bhuva, B L, Hooten, N C, Dodds, N A, Reed, R A, Massengill, L W, Schrimpf, R D, Vizkelethy, G

“…Pulse widths of single-event transients produced by alpha particles in a 65-nm bulk CMOS technology are reported. The experimental setup and calibration of the…”
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High Energy Electron-Induced Transients In a Shielded Focal Plane Array by Auden, E C, Weller, R A, Mendenhall, M H, Reed, R A, Schrimpf, R D, King, M P, Dodds, N A, Arpin, L A, Asai, M

“…Monte Carlo simulations demonstrate that electrons in a Europa-like radiation environment produce single events capable of depositing more than 100 keV in a…”
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