Band Structure Near the Dirac Point in HgTe Quantum Wells with Critical Thickness

Mercury telluride (HgTe) thin films with a critical thickness of 6.5 nm are predicted to possess a gapless Dirac-like band structure. We report a comprehensive study on gated and optically doped samples by magnetooptical spectroscopy in the THz range. The quasi-classical analysis of the cyclotron re...

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Bibliographic Details
Published in:Nanomaterials (Basel, Switzerland) Vol. 12; no. 14; p. 2492
Main Authors: Shuvaev, Alexey, Dziom, Vlad, Gospodarič, Jan, Novik, Elena G., Dobretsova, Alena A., Mikhailov, Nikolay N., Kvon, Ze Don, Pimenov, Andrei
Format: Journal Article
Language:English
Published: Basel MDPI AG 20-07-2022
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Summary:Mercury telluride (HgTe) thin films with a critical thickness of 6.5 nm are predicted to possess a gapless Dirac-like band structure. We report a comprehensive study on gated and optically doped samples by magnetooptical spectroscopy in the THz range. The quasi-classical analysis of the cyclotron resonance allowed the mapping of the band dispersion of Dirac charge carriers in a broad range of electron and hole doping. A smooth transition through the charge neutrality point between Dirac holes and electrons was observed. An additional peak coming from a second type of holes with an almost density-independent mass of around 0.04m0 was detected in the hole-doping range and attributed to an asymmetric spin splitting of the Dirac cone. Spectroscopic evidence for disorder-induced band energy fluctuations could not be detected in present cyclotron resonance experiments.
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ISSN:2079-4991
2079-4991
DOI:10.3390/nano12142492