Band Structure Near the Dirac Point in HgTe Quantum Wells with Critical Thickness
Mercury telluride (HgTe) thin films with a critical thickness of 6.5 nm are predicted to possess a gapless Dirac-like band structure. We report a comprehensive study on gated and optically doped samples by magnetooptical spectroscopy in the THz range. The quasi-classical analysis of the cyclotron re...
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Published in: | Nanomaterials (Basel, Switzerland) Vol. 12; no. 14; p. 2492 |
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Main Authors: | , , , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
Basel
MDPI AG
20-07-2022
MDPI |
Subjects: | |
Online Access: | Get full text |
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Summary: | Mercury telluride (HgTe) thin films with a critical thickness of 6.5 nm are predicted to possess a gapless Dirac-like band structure. We report a comprehensive study on gated and optically doped samples by magnetooptical spectroscopy in the THz range. The quasi-classical analysis of the cyclotron resonance allowed the mapping of the band dispersion of Dirac charge carriers in a broad range of electron and hole doping. A smooth transition through the charge neutrality point between Dirac holes and electrons was observed. An additional peak coming from a second type of holes with an almost density-independent mass of around 0.04m0 was detected in the hole-doping range and attributed to an asymmetric spin splitting of the Dirac cone. Spectroscopic evidence for disorder-induced band energy fluctuations could not be detected in present cyclotron resonance experiments. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 2079-4991 2079-4991 |
DOI: | 10.3390/nano12142492 |