Search Results - "Dobos, L"

GLADE: A galaxy catalogue for multimessenger searches in the advanced gravitational-wave detector era by Dálya, G, Galgóczi, G, Dobos, L, Frei, Z, Heng, I S, Macas, R, Messenger, C, Raffai, P, de Souza, R S

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The role of microglia in 67NR mammary tumor‐induced suppression of brain responses to immune challenges in female mice by Otto‐Dobos, L. D., Santos, J. C., Strehle, L. D., Grant, C. V., Simon, L. A., Oliver, B., Godbout, J. P., Sheridan, J. F., Barrientos, R. M., Glasper, E. R., Pyter, L. M.

“…It is poorly understood how solid peripheral tumors affect brain neuroimmune responses despite the various brain‐mediated side effects and higher rates of…”
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A common explanation of the Hubble tension and anomalous cold spots in the CMB by Kovács, A, Beck, R, Szapudi, I, Csabai, I, Rácz, G, Dobos, L

“…ABSTRACT The standard cosmological paradigm narrates a reassuring story of a universe currently dominated by an enigmatic dark energy component. Disquietingly,…”
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Chemotherapy-induced gut microbiome disruption, inflammation, and cognitive decline in female patients with breast cancer by Otto-Dobos, L.D., Grant, C.V., Lahoud, A.A., Wilcox, O.R., Strehle, L.D., Loman, B.R., Adarkwah Yiadom, S., Seng, M.M., Halloy, N.R., Russart, K.L.G., Carpenter, K.M., Dawson, E., Sardesai, S.D., Williams, N.O., Gatti-Mays, M.E., Stover, D.G., Sudheendra, P.K., Wesolowski, R., Kiecolt-Glaser, J.K., Bailey, M.T., Andridge, R.R., Pyter, L.M.

“…•Chemotherapy induces microbiome disruption, inflammation, and cognitive decline.•The resulting microbiome disruption relates to cognitive decline and…”
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Crystallization of amorphous-Si films by flash lamp annealing by Pécz, B., Dobos, L., Panknin, D., Skorupa, W., Lioutas, C., Vouroutzis, N.

“…The crystallization of amorphous silicon films deposited on glass, using the flash lamp annealing process was realized and studied. The duration of the flash…”
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Cross-sectional transmission electron microscopy of GaAs quantum dots fabricated by filling of droplet-etched nanoholes by Nemcsics, Á., Heyn, Ch, Tóth, L., Dobos, L., Stemmann, A., Hansen, W.

“…We investigate strain-free GaAs quantum dots (QDs) fabricated by filling of nanoholes in semiconductor surfaces. The nanoholes are created in a self-organized…”
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Formation and characterization of semiconductor Ca2Si layers prepared on p-type silicon covered by an amorphous silicon cap by Dózsa, L., Molnár, G., Zolnai, Z., Dobos, L., Pécz, B., Galkin, N. G., Dotsenko, S. A., Bezbabny, D. A., Fomin, D. V.

“…Formation of calcium silicide on three types of templates: Si(111)7 × 7, 2D Mg 2 Si, and 3D Mg 2 Si, was studied during Ca deposition at 120 °C in situ by…”
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Refined position angle measurements for galaxies of the SDSS Stripe 82 co-added dataset by Varga, J., Csabai, I., Dobos, L.

“…Position angle measurements of Sloan Digital Sky Survey (SDSS) galaxies, as measured by the surface brightness profile fitting code of the SDSS photometric…”
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Photo-Met: A non-parametric method for estimating stellar metallicity from photometric observations by Kerekes, Gy, Csabai, I., Dobos, L., Trencséni, M.

“…Getting spectra at good signal‐to‐noise ratios takes orders of magnitudes more time than photometric observations. Building on the technique developed for…”
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TEM study of defects in AlxGa1−xN layers with different polarity by Tikhonov, A.V., Malin, T.V., Zhuravlev, K.S., Dobos, L., Pecz, B.

“…Transmission electron microscopy (TEM) studies of defects in AlxGa1-xN layers with various Al mole fractions (x=0.2, 0.4) and polarities were carried out. The…”
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Multidimensional indexing tools for the virtual observatory by Csabai, I., Dobos, L., Trencséni, M., Herczegh, G., Józsa, P., Purger, N., Budavári, T., Szalay, A.S.

“…The last decade has seen a dramatic change in the way astronomy is carried out. The dawn of the the new microelectronic devices, like CCDs has dramatically…”
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Migration of CrSi2 nanocrystals through nanopipes in the silicon cap by Galkin, N.G., Dózsa, L., Chusovitin, E.A., Pécz, B., Dobos, L.

“…CrSi2 nanocrystals (NC 1 1 NC - nanocrystal. ) were grown by reactive deposition epitaxy of Cr at 550A degree C. After deposition the Cr is localized in about…”
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Annealed Ti/Cr/Al contacts on n-GaN by Dobos, L., Pécz, B., Tóth, L., Horváth, Zs.J., Horváth, Z.E., Tóth, A.L., Poisson, M.-A.

“…In this study we report on the micro-, and nanostructural, morphological and electrical properties of Ti(20 nm)/Cr(120 nm)/Al(50 nm) contacts to n-GaN by…”
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AlN growth on sapphire substrate by ammonia MBE by Mansurov, V.G., Nikitin, A.Yu, Galitsyn, Yu.G., Svitasheva, S.N., Zhuravlev, K.S., Osvath, Z., Dobos, L., Horvath, Z.E., Pecz, B.

“…Kinetics of (0 0 0 1) Al 2O 3 surface nitridation and subsequent growth of AlN films on the sapphire substrate by ammonia molecular beam epitaxy (MBE) are…”
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Electrical behaviour of lateral Al/n-GaN/Al structures by Horváth, Zs. J., Dobos, L., Beaumont, B., Bougrioua, Z., Pécz, B.

“…The electrical behaviour of lateral Al/n-GaN/Al structures has been studied by current–voltage measurements between a large pad with an area of 22 mm 2 and…”
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The microstructure of Ti/Au contacts on n-type GaN annealed in nitrogen by Dobos, L., Tóth, L., Pécz, B., Horváth, Z.E., Tóth, A.L., Beaumont, B., Bougrioua, Z.

“…Ti(40nm)/Au(120nm) contacts have been prepared on n-GaN/sapphire. The contacts were annealed from 400°C to 900°C for 10min in nitrogen, respectively. The…”
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CBr4 as precursor for VPE growth of cubic silicon carbide by Watts, B. E., Bosi, M., Attolini, G., Battistig, G., Dobos, L., Pécz, B.

“…This work presents a study of carbon tetrabromide (CBr4) as precursor to deposit 3C‐SiC on (001) and (111) Si by VPE technique at temperatures ranging between…”
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Si nanocrystals in silicon nitride: An ellipsometric study using parametric semiconductor models by Basa, P., Petrik, P., Fried, M., Dobos, L., Pécz, B., Tóth, L.

“…Low-pressure chemical vapour deposited Si 3N 4/nc-Si/Si 3N 4 layers prepared on Si substrates were characterized by spectroscopic ellipsometry. Model…”
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Bilayer Cr/Au contacts on n-GaN by Dobos, L., Tóth, L., Pécz, B., Horváth, Zs.J., Horváth, Z.E., Tóth, A.L., Beaumont, B., Bougrioua, Z.

“…Cr/Au (40/65 nm) metal layers have been deposited by thermal evaporation onto n-GaN epitaxial layers grown by metal-organic chemical-vapour deposition (MOCVD)…”
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Metal contacts to n-GaN by Dobos, L., Pécz, B., Tóth, L., Horváth, Zs.J., Horváth, Z.E., Tóth, A., Horváth, E., Beaumont, B., Bougrioua, Z.

“…Al, Au, Ti/Al and Ti/Au contacts were prepared on n-GaN and annealed up to 900 deg C. The structure, phase and morphology were studied by cross-sectional…”
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