Electrical properties and radiation hardness of SOI systems with multilayer buried dielectric

In this work SOI structures with buried SiO/sub 2/-Si/sub 3/N/sub 4/-SiO/sub 2/ layers have been fabricated by the ZMR-technique with the aim of improving the total dose radiation hardness of the buried dielectric layer. To optimize the fabrication process, buried layers were investigated by seconda...

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Bibliographic Details
Published in:	IEEE transactions on nuclear science Vol. 44; no. 6; pp. 2542 - 2552
Main Authors:	Barchuk, I.P., Kilchitskaya, V.I., Lysenko, V.S., Nazarov, A.N., Rudenko, T.E., Djurenko, S.V., Rudenko, A.N., Yurchenko, A.P., Ballutaud, D.B., Colinge, J.-P.
Format:	Journal Article
Language:	English
Published:	IEEE 01-12-1997
Subjects:	Dielectrics Fabrication Insulation Isolation technology Nonhomogeneous media Radiation effects Semiconductor films Silicon on insulator technology Threshold voltage Very large scale integration
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Summary:	In this work SOI structures with buried SiO/sub 2/-Si/sub 3/N/sub 4/-SiO/sub 2/ layers have been fabricated by the ZMR-technique with the aim of improving the total dose radiation hardness of the buried dielectric layer. To optimize the fabrication process, buried layers were investigated by secondary ion mass spectrometry before and after the ZMR process, and the obtained results were compared with electrical measurements. It is shown that optimization of the preparation processes of the initial buried dielectric layers provides ZMR SOI structures with multilayer buried isolation, which are of high quality for both Si film interfaces. Particular attention is paid to the investigation of radiation-induced charge trapping in buried insulators. Buried isolation structures with a nitride layer exhibit significant reduction of radiation-induced positive charge as compared to classical buried SiO/sub 2/ layers produced by either the ZMR or the SIMOX technique.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0018-9499 1558-1578
DOI:	10.1109/23.650861