Search Results - "Dixit, Ripudaman"

Diode‐Like Selective Enhancement of Carrier Transport through Metal–Semiconductor Interface Decorated by Monolayer Boron Nitride by Jaiswal, Hemendra Nath, Liu, Maomao, Shahi, Simran, Wei, Sichen, Lee, Jihea, Chakravarty, Anindita, Guo, Yutong, Wang, Ruiqiang, Lee, Jung Mu, Chang, Chaoran, Fu, Yu, Dixit, Ripudaman, Liu, Xiaochi, Yang, Cheng, Yao, Fei, Li, Huamin

“…2D semiconductors such as monolayer molybdenum disulfide (MoS2) are promising material candidates for next‐generation nanoelectronics. However, there are…”
Get full text

Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene by Nathawat, Jubin, Mansaray, Ishiaka, Sakanashi, Kohei, Wada, Naoto, Randle, Michael D., Yin, Shenchu, He, Keke, Arabchigavkani, Nargess, Dixit, Ripudaman, Barut, Bilal, Zhao, Miao, Ramamoorthy, Harihara, Somphonsane, Ratchanok, Kim, Gil-Ho, Watanabe, Kenji, Taniguchi, Takashi, Aoki, Nobuyuki, Han, Jong E., Bird, Jonathan P.

“…Stacking of graphene with hexagonal boron nitride (h-BN) can dramatically modify its bands from their usual linear form, opening a series of narrow minigaps…”
Get full text

Real‐Time Observation of Slowed Charge Density Wave Dynamics in Thinned 1T‐TaS2 by Yin, Shenchu, He, Keke, Barut, Bilal, Randle, Michael D., Dixit, Ripudaman, Nathawat, Jubin, Adinehloo, Davoud, Perebeinos, Vasili, Han, Jong E., Bird, Jonathan P.

“…Transient electrical pulsing is used to investigate the slowed charge density wave (CDW) kinetics of 1T‐TaS2. These measurements distinguish a fast response of…”
Get full text

Gate-Controlled Metal-Insulator Transition in TiS 3 Nanowire Field-Effect Transistors by Randle, Michael, Lipatov, Alexey, Kumar, Avinash, Kwan, Chun-Pui, Nathawat, Jubin, Barut, Bilal, Yin, Shenchu, He, Keke, Arabchigavkani, Nargess, Dixit, Ripudaman, Komesu, Takeshi, Avila, José, Asensio, Maria C, Dowben, Peter A, Sinitskii, Alexander, Singisetti, Uttam, Bird, Jonathan P

“…We explore the electrical characteristics of TiS nanowire field-effect transistor (FETs), over the wide temperature range from 3 to 350 K. These nanomaterials…”
Get full text

Transient Investigations of Hot-Carrier Dynamics in the Solar-Absorber Material AlInAs by Dixit, Ripudaman

“…In this thesis, we investigate the electrical properties of the direct-bandgap semiconductor Al0.35In0.65As, whose multivalley conduction-band structure has…”
Get full text

Gate-Controlled Metal–Insulator Transition in TiS3 Nanowire Field-Effect Transistors by Randle, Michael, Lipatov, Alexey, Kumar, Avinash, Kwan, Chun-Pui, Nathawat, Jubin, Barut, Bilal, Yin, Shenchu, He, Keke, Arabchigavkani, Nargess, Dixit, Ripudaman, Komesu, Takeshi, Avila, José, Asensio, Maria C, Dowben, Peter A, Sinitskii, Alexander, Singisetti, Uttam, Bird, Jonathan P

“…We explore the electrical characteristics of TiS3 nanowire field-effect transistor (FETs), over the wide temperature range from 3 to 350 K. These nanomaterials…”
Get full text

Probing the Dynamics of Electric Double Layer Formation over Wide Time Scales (10–9–10+5 s) in the Ionic Liquid DEME-TFSI by Yin, Shenchu, He, Keke, Randle, Michael D, Barut, Bilal, Dixit, Ripudaman, Lipatov, Alexey, Sinitskii, Alexander, Bird, Jonathan P

“…We investigate the transient response of N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis­(trifluoromethylsulfonyl)-imide-based ionic liquid (IL) planar…”
Get full text

Graphene on Chromia: A System for Beyond‐Room‐Temperature Spintronics (Adv. Mater. 12/2022) by He, Keke, Barut, Bilal, Yin, Shenchu, Randle, Michael D., Dixit, Ripudaman, Arabchigavkani, Nargess, Nathawat, Jubin, Mahmood, Ather, Echtenkamp, Will, Binek, Christian, Dowben, Peter A., Bird, Jonathan P.

“…Spintronics There has long been interest in exploiting the excellent spin coherence in graphene for applications in spintronics. In article 2105023, Keke He,…”
Get full text

Graphene on Chromia: A System for Beyond‐Room‐Temperature Spintronics by He, Keke, Barut, Bilal, Yin, Shenchu, Randle, Michael D., Dixit, Ripudaman, Arabchigavkani, Nargess, Nathawat, Jubin, Mahmood, Ather, Echtenkamp, Will, Binek, Christian, Dowben, Peter A., Bird, Jonathan P.

“…Evidence of robust spin‐dependent transport in monolayer graphene, deposited on the (0001) surface of the antiferromagnetic (AFM)/magneto‐electric oxide…”
Get full text

Asymmetrically Engineered Nanoscale Transistors for On-Demand Sourcing of Terahertz Plasmons by Barut, Bilal, Cantos-Roman, Xavier, Crabb, Justin, Kwan, Chun-Pui, Dixit, Ripudaman, Arabchigavkani, Nargess, Yin, Shenchu, Nathawat, Jubin, He, Keke, Randle, Michael D, Vandrevala, Farah, Sugaya, Takeyoshi, Einarsson, Erik, Jornet, Josep M, Bird, Jonathan P, Aizin, Gregory R

“…Terahertz (THz) plasma oscillations represent a potential path to implement ultrafast electronic devices and circuits. Here, we present an approach to generate…”
Get full text

Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene by Nathawat, Jubin, Mansaray, Ishiaka, Sakanashi, Kohei, Wada, Naoto, Randle, Michael D., Yin, Shenchu, He, Keke, Arabchigavkani, Nargess, Dixit, Ripudaman, Barut, Bilal, Zhao, Miao, Ramamoorthy, Harihara, Somphonsane, Ratchanok, Kim, Gil-Ho, Watanabe, Kenji, Taniguchi, Takashi, Aoki, Nobuyuki, Han, Jong E., Bird, Jonathan P.

“…Abstract Stacking of graphene with hexagonal boron nitride (h-BN) can dramatically modify its bands from their usual linear form, opening a series of narrow…”
Get full text

Influence of growth temperature on laser molecular beam epitaxy and properties of GaN layers grown on c-plane sapphire by Dixit, Ripudaman, Tyagi, Prashant, Kushvaha, Sunil Singh, Chockalingam, Sreekumar, Yadav, Brajesh Singh, Sharma, Nita Dilawar, Kumar, M. Senthil

“…We have investigated the influence of growth temperature on the in-plane strain, structural, optical and mechanical properties of heteroepitaxially grown GaN…”
Get full text

Real‐Time Observation of Slowed Charge Density Wave Dynamics in Thinned 1T‐TaS 2 by Yin, Shenchu, He, Keke, Barut, Bilal, Randle, Michael D., Dixit, Ripudaman, Nathawat, Jubin, Adinehloo, Davoud, Perebeinos, Vasili, Han, Jong E., Bird, Jonathan P.

“…Abstract Transient electrical pulsing is used to investigate the slowed charge density wave (CDW) kinetics of 1T‐TaS 2 . These measurements distinguish a fast…”
Get full text

Gate-Controlled Metal–Insulator Transition in TiS3 Nanowire Field-Effect Transistors by Randle, Michael, Lipatov, Alexey, Kumar, Avinash, Kwan, Chun-Pui, Nathawat, Jubin, Barut, Bilal, Yin, Shenchu, He, Keke, Arabchigavkani, Nargess, Dixit, Ripudaman, Komesu, Takeshi, Avila, José, Asensio, Maria C., Dowben, Peter A., Sinitskii, Alexander, Singisetti, Uttam, Bird, Jonathan P.

“…We explore the electrical characteristics of TiS3 nanowire field-effect transistor (FETs), over the wide temperature range from 3 to 350 K. These nanomaterials…”
Get full text

Nonvolatile Memory Action Due to Hot-Carrier Charge Injection in Graphene-on-Parylene Transistors by Yin, Shenchu, Gluschke, Jan G, Micolich, Adam P, Nathawat, Jubin, Barut, Bilal, Dixit, Ripudaman, Arabchigavkani, Nargess, He, Keke, Randle, Michael, Kwan, Chun-Pui, Bird, Jonathan P

“…We fabricated graphene field-effect transistors (GFETs) with hybrid organic/inorganic gate dielectrics, in which parylene C is used as the organic component…”
Get full text

Diode-like Selective Enhancement of Carrier Transport through Metal-Semiconductor Interface Decorated by Monolayer Boron Nitride by Jaiswal, Hemendra Nath, Liu, Maomao, Shahi, Simran, Wei, Sichen, Lee, Jihea, Chakravarty, Anindita, Guo, Yutong, Wang, Ruiqiang, Lee, Jung Mu, Chang, Chaoran, Fu, Yu, Dixit, Ripudaman, Liu, Xiaochi, Yang, Cheng, Yao, Fei, Li, Huamin

“…Two-dimensional (2D) semiconductors are promising material candidates for next-generation nanoelectronics. However, there are fundamental challenges related to…”
Get full text