Three-Mask Polysilicon Thin-Film Transistor Biosensor

Biosensors are commonly produced using a siliconon-insulator (SOI) CMOS process and advanced lithography to define nanowires. In this paper, a simpler and cheaper junctionless three-mask process is investigated, which uses thin-film technology to avoid the use of SOI wafers, in situ doping to avoid...

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Bibliographic Details
Published in:	IEEE transactions on electron devices Vol. 61; no. 6; pp. 2170 - 2176
Main Authors:	Kai Sun, Zeimpekis, Ioannis, Lombardini, Marta, Ditshego, Nonofo M. Jack, Pearce, Stuart J., Kiang, Kian S., Thomas, Owain, de Planque, Maurits R. R., Chong, Harold M. H., Morgan, Hywel, Ashburn, Peter
Format:	Journal Article
Language:	English
Published:	New York IEEE 01-06-2014 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:	Biosensor Biosensors Boards Bonding Contact Devices Doping Drains Immune system Nanowires pH sensor plasma chemical vapor deposition Printed circuit boards R&D Research & development semiconductor device fabrication Semiconductor process modeling Thin film transistors Thin films thin-film transistors (TFTs) Tin Titanium nitride semiconductor device fabrication plasma chemical vapor deposition Biosensor pH sensor thin-film transistors (TFTs)
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Summary:	Biosensors are commonly produced using a siliconon-insulator (SOI) CMOS process and advanced lithography to define nanowires. In this paper, a simpler and cheaper junctionless three-mask process is investigated, which uses thin-film technology to avoid the use of SOI wafers, in situ doping to avoid the need for ion implantation and direct contact to a low-doped polysilicon film to eliminate the requirement for heavily doped source/drain contacts. Furthermore, TiN is used to contact the biosensor source/drain because it is a hard resilient material that allows the biosensor chip to be directly connected to a printed circuit board without wire bonding. pH sensing experiments, combined with device modeling, are used to investigate the effects of contact and series resistance on the biosensor performance, as this is a key issue when contacting directly to low-doped silicon. It is shown that in situ phosphorus doping concentrations in the range 4 × 10 17 -3 × 10 19 cm -3 can be achieved using 0.1% PH 3 flows between 4 and 20 sccm. Furthermore, TiN makes an ohmic contact to the polysilicon even at the bottom end of this doping range. Operation as a biosensor is demonstrated by the detection of C-reactive protein, an inflammatory biomarker for respiratory disease.
Bibliography:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2014.2315669