Search Results - "Diniz, J.A."

Early and late neuropathological features of meningoencephalitis associated with Maraba virus infection by Maia-Farias, A, Lima, C M, Freitas, P S L, Diniz, D G, Rodrigues, A P D, Quaresma, J A S, Diniz, C W Picanço, Diniz, J A

“…Maraba virus is a member of the genus Vesiculovirus of the Rhabdoviridae family that was isolated in 1983 from sandflies captured in the municipality of…”
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Titanium nitride as electrode for MOS technology and Schottky diode: Alternative extraction method of titanium nitride work function by Lima, L.P.B., Diniz, J.A., Doi, I., Godoy Fo, J.

“…Titanium nitride (TiN) films have been used as gate electrodes in metal–oxide-semiconductor (MOS) capacitors, which were fabricated with SiO2 layer as gate…”
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Thin SiO2/a-Si:H/SiO2 multilayer insulators obtained by electron cyclotron resonance chemical vapor deposition at room temperature for possible application in non-volatile memories by Mateos, D., Diniz, J.A., Nedev, N., Munoz, S.N.M., Curiel, M., Mederos, M., Valdez, B., Montero, G.

“…In this work we present electrical and morphological characterization of thin multilayer structures, SiO2/a-Si:H/SiO2, with possible applications in…”
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Electrical characterization and morphological properties of AlN films prepared by dc reactive magnetron sputtering by Moreira, M.A., Doi, I., Souza, J.F., Diniz, J.A.

“…Aluminum nitride (AlN) films were deposited by dc reactive magnetron sputtering on p-Si-(1 0 0) substrate in Ar–N 2 gas mixtures. The effects of nitrogen…”
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Silicon nitride thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition for micromechanical system applications by Biasotto, C., Diniz, J.A., Daltrini, A.M., Moshkalev, S.A., Monteiro, M.J.R.

“…Thin silicon nitride films have been deposited by a low temperature (20 °C) Electron Cyclotron Resonance (ECR) plasma directly on Si substrates. Varying the…”
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Micro-Raman stress characterization of polycrystalline silicon films grown at high temperature by Teixeira, R.C., Doi, I., Zakia, M.B.P., Diniz, J.A., Swart, J.W.

“…In this paper the residual stress of polycrystalline silicon (poly-Si) grown at high temperature in a vertical LPCVD reactor has been studied using micro-Raman…”
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Structural and surface properties of Si1-xGex thin films obtained by reduced pressure CVD by TEIXEIRA, R. C, DOI, I, DINIZ, J. A, SWART, J. W, ZAKIA, M. B. P

“…This paper investigates the structure and surface characteristics, and electrical properties of the polycrystalline silicon-germanium (poly-Si1-xGex) alloy…”
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Uncooled detectors of continuum terahertz radiation by Kaufmann, P., Marcon, R., Kudaka, A.S., Cassiano, M. M., Fernandes, L.O.T., Marun, A., Pereyra, P., Godoy, R., Bortolucci, E., Zakia, M. Beny, Diniz, J.A., Silva, A.M. Pereira Alves da, Timofeevsky, A.V., Nikolaev, V.A.

“…THz continuum spectral photometry has new and unique applications in different civil and military areas presenting a number of distinctive advantages on the…”
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Flat band voltage (VFB) drift by integrated reference electrode work function in Electrolyte Insulator Semiconductor (EIS) devices by César, R.R., Mederos, M., Teixeira, R.C., Diniz, J.A.

“…Electrolyte-insulator-semiconductor (EIS) devices were fabricated using titanium nitride (TiN), gold (Au) and platinum (Pt) as integrated reference electrodes…”
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Thermal stability of Ni(Pt) silicide films formed on poly-Si by Doi, I., Teixeira, R.C., Santos, R.E., Diniz, J.A., Swart, J.W., Santos Filho, S.G.

“…The stability of Ni silicide films formed with a thin interlayer of Pt onto poly-Si layer has been investigated in a wide range of silicidation temperatures…”
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Anti-Leishmania titers and positive skin tests in patients cured of kala-azar by Viana, G M C, Nascimento, M D S B, Diniz Neto, J A, Rabelo, E M F, Binda Júnior, J R, Santos Júnior, O M, Santos, A C, Galvão, C S, Guimarães, R S

“…Visceral leishmaniasis (VL), also known as kala-azar, is an important public health problem. If not treated, virtually all clinically symptomatic patients die…”
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Effects of temperature and deposition time on the structural and optical properties of Si1−Ge nanoparticles grown by low pressure chemical vapor deposition by Mederos, M., Mestanza, S.N.M., Doi, I., Diniz, J.A.

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Effects of temperature and deposition time on the structural and optical properties of Si1−xGex nanoparticles grown by low pressure chemical vapor deposition by Mederos, M., Mestanza, S.N.M., Doi, I., Diniz, J.A.

“…The structural and optical properties of Si1−xGex nanoparticles were studied in this work. The samples were grown by the low pressure chemical vapor deposition…”
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Germanium nanoparticles grown at different deposition times for memory device applications by Mederos, M., Mestanza, S.N.M., Lang, R., Doi, I., Diniz, J.A.

“…In the present work, circular Metal-Oxide-Semiconductor capacitors with 200μm of diameter and germanium (Ge) nanoparticles (NPs) embedded in the gate oxide are…”
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Thin titanium oxide films deposited by e-beam evaporation with additional rapid thermal oxidation and annealing for ISFET applications by Barros, A.D., Albertin, K.F., Miyoshi, J., Doi, I., Diniz, J.A.

“…Titanium oxide (TiO 2) has been extensively applied in the medical area due to its proved biocompatibility with human cells [1]. This work presents the…”
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TiN/titanium–aluminum oxynitride/Si as new gate structure for 3D MOS technology by Miyoshi, J., Lima, L.P.B., Diniz, J.A., Cavarsan, F.A., Doi, I., Godoy Filho, J., Silva, A.R.

“…3D MOS capacitors with Al/TAON/Si (as control sample) and TiN/TAON/Si gate structures for 3D technology were fabricated. Focus Ion Beam (FIB) thinning process:…”
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Structural and surface properties of Si 1− x Ge x thin films obtained by reduced pressure CVD by Teixeira, R.C., Doi, I., Diniz, J.A., Swart, J.W., Zakia, M.B.P.

“…This paper investigates the structure and surface characteristics, and electrical properties of the polycrystalline silicon-germanium (poly-Si 1− x Ge x )…”
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Titanium–aluminum oxynitride (TAON) as high- k gate dielectric for sub-32 nm CMOS technology by Miyoshi, J., Diniz, J.A., Barros, A.D., Doi, I., Zuben, A.A.G. Von

“…High- k insulators for the next generation (sub-32 nm CMOS (complementary metal–oxide–semiconductor) technology), such as titanium–aluminum oxynitride (TAON)…”
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Surface passivation of InGaP/GaAs HBT using silicon-nitride film deposited by ECR–CVD plasma by Manera, L.T., Zoccal, L.B., Diniz, J.A., Tatsch, P.J., Doi, I.

“…In this paper we have developed a passivation technique with silicon-nitride (SiN X ) film that requires no surface pre-treatment, and is fully compatible to…”
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Anti-Leishmania titers and positive skin tests in patients cured of kala-azar by G.M.C. Viana, M.D.S.B. Nascimento, J.A. Diniz Neto, E.M.F. Rabelo, J.R. Binda Júnior, O.M. Santos Júnior, A.C. Santos, C.S. Galvão, R.S. Guimarães

“…Visceral leishmaniasis (VL), also known as kala-azar, is an important public health problem. If not treated, virtually all clinically symptomatic patients die…”
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