Search Results - "Ding, Senchuan"

Diamond MOSFET with MoO3/Si3N4 doubly stacked gate dielectric by Ren, Zeyang, Ding, Senchuan, Liang, Zhenfang, He, Qi, Su, Kai, Zhang, Jinfeng, Zhang, Jincheng, Zhang, Chunfu, Hao, Yue

“…A hydrogen terminated diamond MOSFET with MoO3/Si3N4 doubly stacked gate dielectrics was fabricated on a single crystalline diamond sample. Compared to a…”
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Influence of the Splicing Interface of the Mosaic Single Crystal Diamond on the H-Diamond Field-Effect Transistor Performance by Ding, Senchuan, Ren, Zeyang, Zhang, Jinfeng, Su, Kai, Ma, Yuanchen, Chen, Junfei, Xu, Qihui, Zhang, Jincheng, Hao, Yue

“…The 14-mm-large mosaic single crystal diamond (SCD) was prepared by splicing four diamond substrates with 7 mm side lengths by microwave plasma chemical vapor…”
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Single Crystalline Diamond p-Channel Cascode and Inverter by Ding, Senchuan, Ren, Zeyang, Xing, Yufei, Zhang, Jinfeng, Ma, Yuanchen, Su, Kai, Li, Junpeng, Wang, Hanxue, Zhang, Jincheng, Hao, Yue

“…The cascode structure was fabricated by combining the H-diamond normally-ON p-FET with the Si normally-OFF p-FET. The cascode shows normally- OFF…”
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Optical defects and their depth penetration in 200 keV electron irradiated IIa diamond by Guo, Ruiang, Wang, Kaiyue, Ding, Senchuan, Wang, Hongxing

“…Diamond is a wide bandgap semiconducting material, and electron irradiation is a good modification method for diamond. When the diamond with a thickness of 0.1…”
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Single-crystal diamond grown through high-power-density epitaxy used for a high-performance radiation detector by Ding, Senchuan, Zhang, Jinfeng, Su, Kai, Ren, Zeyang, Chen, Junfei, Yang, Zhiqing, Zhang, Jincheng, Hao, Yue

“…Radiation detectors are important device-level characterization tools of the carrier dynamics of diamond as an ultrawide-bandgap semiconductor. Herein, a…”
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Creation and Migration of Intrinsic Defects in Si‐Doped Diamond Produced Using Microwave Plasma Chemical Vapor Deposition by Wang, Kaiyue, Ding, Senchuan, Zhang, Yufei, Wang, Hong‐Xing, Tian, Yuming, Wang, Yingmin, Chai, Yuesheng

“…In this study, low temperature micro‐photoluminescence technology is used to investigate the development and migration of intrinsic defects in Si‐doped…”
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