Composition-dependent nanoelectronics of amido-phenazines: non-volatile RRAM and WORM memory devices

A metal-free three component cyclization reaction with amidation is devised for direct synthesis of DFT-designed amido-phenazine derivative bearing noncovalent gluing interactions to fabricate organic nanomaterials. Composition-dependent organic nanoelectronics for nonvolatile memory devices are dis...

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Bibliographic Details
Published in:Scientific reports Vol. 7; no. 1; pp. 13308 - 10
Main Authors: Maiti, Dilip K., Debnath, Sudipto, Nawaz, Sk. Masum, Dey, Bapi, Dinda, Enakhi, Roy, Dipanwita, Ray, Sudipta, Mallik, Abhijit, Hussain, Syed A.
Format: Journal Article
Language:English
Published: London Nature Publishing Group UK 17-10-2017
Nature Publishing Group
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Summary:A metal-free three component cyclization reaction with amidation is devised for direct synthesis of DFT-designed amido-phenazine derivative bearing noncovalent gluing interactions to fabricate organic nanomaterials. Composition-dependent organic nanoelectronics for nonvolatile memory devices are discovered using mixed phenazine-stearic acid ( SA ) nanomaterials. We discovered simultaneous two different types of nonmagnetic and non-moisture sensitive switching resistance properties of fabricated devices utilizing mixed organic nanomaterials: (a) sample-1 ( 8 : SA  = 1:3) is initially off, turning on at a threshold, but it does not turn off again with the application of any voltage, and (b) sample-2 ( 8 : SA  = 3:1) is initially off, turning on at a sharp threshold and off again by reversing the polarity. No negative differential resistance is observed in either type. These samples have different device implementations: sample-1 is attractive for write-once-read-many-times memory devices, such as novel non-editable database, archival memory, electronic voting, radio frequency identification, sample-2 is useful for resistive-switching random access memory application.
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ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-017-13754-w