Search Results - "Dimakis, Emmanouil"
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High electron mobility in strained GaAs nanowires
Published in Nature communications (17-11-2021)“…Transistor concepts based on semiconductor nanowires promise high performance, lower energy consumption and better integrability in various platforms in…”
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Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch
Published in Nature communications (26-06-2019)“…The realisation of photonic devices for different energy ranges demands materials with different bandgaps, sometimes even within the same device. The optimal…”
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Coaxial Multishell (In,Ga)As/GaAs Nanowires for Near-Infrared Emission on Si Substrates
Published in Nano letters (14-05-2014)“…Efficient infrared light emitters integrated on the mature Si technology platform could lead to on-chip optical interconnects as deemed necessary for future…”
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All-THz pump-probe spectroscopy of the intersubband AC-Stark effect in a wide GaAs quantum well
Published in Optics express (17-08-2020)“…We report the observation of the intersubband AC-Stark effect in a single wide GaAs/AlGaAs quantum well. In a three-level configuration, the n = 2 to n = 3…”
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Plasmonic off-axis unidirectional beaming of quantum-well luminescence
Published in Applied physics letters (16-12-2013)“…Plasmonic off-axis unidirectional beaming of luminescence is demonstrated using nitride semiconductor quantum wells. The underlying mechanism involves the…”
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Self-Assisted Nucleation and Vapor–Solid Growth of InAs Nanowires on Bare Si(111)
Published in Crystal growth & design (07-09-2011)“…The nucleation and growth of InAs nanowires on bare Si(111) has been investigated by molecular beam epitaxy. Nontapered InAs nanowires with high aspect ratio…”
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Enhanced near-green light emission from InGaN quantum wells by use of tunable plasmonic resonances in silver nanoparticle arrays
Published in Optics express (27-09-2010)“…Two-dimensional arrays of silver nanocylinders fabricated by electron-beam lithography are used to demonstrate plasmon-enhanced near-green light emission from…”
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Plan-view transmission electron microscopy investigation of GaAs/(In,Ga)As core-shell nanowires
Published in Applied physics letters (22-09-2014)“…Plan-view transmission electron microscopy in combination with electron energy-loss spectroscopy have been used to analyze the strain and the chemical…”
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Broadband Photo-Excited Coherent Acoustic Frequency Combs and Mini-Brillouin-Zone Modes in a MQW-SESAM Structure
Published in Applied sciences (01-01-2019)“…A multiple quantum-well semiconductor saturable absorber mirror (MQW-SESAM) structure has been investigated by femtosecond pump-probe laser spectroscopy at a…”
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Polytypism in GaAs nanowires: determination of the interplanar spacing of wurtzite GaAs by X-ray diffraction
Published in Journal of synchrotron radiation (01-01-2015)“…In GaAs nanowires grown along the cubic [111]c direction, zinc blende and wurtzite arrangements have been observed in their stacking sequence, since the…”
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Plasmon enhanced light emission from InGaN quantum wells via coupling to chemically synthesized silver nanoparticles
Published in Applied physics letters (12-10-2009)“…Chemically synthesized single-crystal silver nanoparticles are used to demonstrate plasmon enhanced visible light emission from nitride semiconductor quantum…”
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Separated Electronic and Strain Interfaces in Core/Dual‐Shell Nanowires: Unlocking the Potential of Strained GaAs for Applications Across Near‐Infrared
Published in Advanced functional materials (01-07-2024)“…Semiconductor nanowires have inspired plenty of novel nanotechnology device concepts in photonics, electronics, and sensing, owing to their unique…”
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Nonlinear Charge Transport in InGaAs Nanowires at Terahertz Frequencies
Published in Nano letters (13-05-2020)“…We probe the electron transport properties in the shell of GaAs/In0.2Ga0.8As core/shell nanowires at high electric fields using optical pump/THz probe…”
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At the Limit of Interfacial Sharpness in Nanowire Axial Heterostructures
Published in ACS nano (13-08-2024)“…As semiconductor devices approach dimensions at the atomic scale, controlling the compositional grading across heterointerfaces becomes paramount. Particularly…”
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Shell-doping of GaAs nanowires with Si for n-type conductivity
Published in Nano research (01-11-2012)“…We demonstrate the potential of using Si as n-type dopant in GaAs nanowires grown by molecular beam epitaxy. The amphoteric behavior of Si that typically…”
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Role of Liquid Indium in the Structural Purity of Wurtzite InAs Nanowires That Grow on Si(111)
Published in Nano letters (10-12-2014)“…InAs nanowires that grow catalyst-free along the [111] crystallographic orientation are prone to wurtzite-zincblende polytypism, making the control of the…”
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Droplet-Confined Alternate Pulsed Epitaxy of GaAs Nanowires on Si Substrates down to CMOS-Compatible Temperatures
Published in Nano letters (13-07-2016)“…We introduce droplet-confined alternate pulsed epitaxy for the self-catalyzed growth of GaAs nanowires on Si(111) substrates in the temperature range from 550…”
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Hot-Electron Dynamics in a Semiconductor Nanowire under Intense THz Excitation
Published in ACS photonics (21-08-2024)“…We report terahertz (THz)-pump/mid-infrared probe near-field studies on Si-doped GaAs–InGaAs core–shell nanowires utilizing THz radiation from the…”
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How Indium Nitride Senses Water
Published in Nano letters (13-12-2017)“…The unique electronic band structure of indium nitride InN, part of the industrially significant III–N class of semiconductors, offers charge transport…”
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