Search Results - "Dimakis, Emmanouil"

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  1. 1

    High electron mobility in strained GaAs nanowires by Balaghi, Leila, Shan, Si, Fotev, Ivan, Moebus, Finn, Rana, Rakesh, Venanzi, Tommaso, Hübner, René, Mikolajick, Thomas, Schneider, Harald, Helm, Manfred, Pashkin, Alexej, Dimakis, Emmanouil

    Published in Nature communications (17-11-2021)
    “…Transistor concepts based on semiconductor nanowires promise high performance, lower energy consumption and better integrability in various platforms in…”
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  2. 2

    Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch by Balaghi, Leila, Bussone, Genziana, Grifone, Raphael, Hübner, René, Grenzer, Jörg, Ghorbani-Asl, Mahdi, Krasheninnikov, Arkady V., Schneider, Harald, Helm, Manfred, Dimakis, Emmanouil

    Published in Nature communications (26-06-2019)
    “…The realisation of photonic devices for different energy ranges demands materials with different bandgaps, sometimes even within the same device. The optimal…”
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  3. 3

    Coaxial Multishell (In,Ga)As/GaAs Nanowires for Near-Infrared Emission on Si Substrates by Dimakis, Emmanouil, Jahn, Uwe, Ramsteiner, Manfred, Tahraoui, Abbes, Grandal, Javier, Kong, Xiang, Marquardt, Oliver, Trampert, Achim, Riechert, Henning, Geelhaar, Lutz

    Published in Nano letters (14-05-2014)
    “…Efficient infrared light emitters integrated on the mature Si technology platform could lead to on-chip optical interconnects as deemed necessary for future…”
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  4. 4

    All-THz pump-probe spectroscopy of the intersubband AC-Stark effect in a wide GaAs quantum well by Schmidt, Johannes, Winnerl, Stephan, Dimakis, Emmanouil, Hübner, René, Schneider, Harald, Helm, Manfred

    Published in Optics express (17-08-2020)
    “…We report the observation of the intersubband AC-Stark effect in a single wide GaAs/AlGaAs quantum well. In a three-level configuration, the n = 2 to n = 3…”
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  5. 5

    Plasmonic off-axis unidirectional beaming of quantum-well luminescence by DiMaria, Jeff, Dimakis, Emmanouil, Moustakas, Theodore D., Paiella, Roberto

    Published in Applied physics letters (16-12-2013)
    “…Plasmonic off-axis unidirectional beaming of luminescence is demonstrated using nitride semiconductor quantum wells. The underlying mechanism involves the…”
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  6. 6

    Self-Assisted Nucleation and Vapor–Solid Growth of InAs Nanowires on Bare Si(111) by Dimakis, Emmanouil, Lähnemann, Jonas, Jahn, Uwe, Breuer, Steffen, Hilse, Maria, Geelhaar, Lutz, Riechert, Henning

    Published in Crystal growth & design (07-09-2011)
    “…The nucleation and growth of InAs nanowires on bare Si(111) has been investigated by molecular beam epitaxy. Nontapered InAs nanowires with high aspect ratio…”
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  7. 7

    Enhanced near-green light emission from InGaN quantum wells by use of tunable plasmonic resonances in silver nanoparticle arrays by Henson, John, Dimakis, Emmanouil, DiMaria, Jeff, Li, Rui, Minissale, Salvatore, Dal Negro, Luca, Moustakas, Theodore D, Paiella, Roberto

    Published in Optics express (27-09-2010)
    “…Two-dimensional arrays of silver nanocylinders fabricated by electron-beam lithography are used to demonstrate plasmon-enhanced near-green light emission from…”
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  8. 8

    Plan-view transmission electron microscopy investigation of GaAs/(In,Ga)As core-shell nanowires by Grandal, Javier, Wu, Mingjian, Kong, Xiang, Hanke, Michael, Dimakis, Emmanouil, Geelhaar, Lutz, Riechert, Henning, Trampert, Achim

    Published in Applied physics letters (22-09-2014)
    “…Plan-view transmission electron microscopy in combination with electron energy-loss spectroscopy have been used to analyze the strain and the chemical…”
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  10. 10

    Broadband Photo-Excited Coherent Acoustic Frequency Combs and Mini-Brillouin-Zone Modes in a MQW-SESAM Structure by Li, Changxiu, Gusev, Vitalyi, Dimakis, Emmanouil, Dekorsy, Thomas, Hettich, Mike

    Published in Applied sciences (01-01-2019)
    “…A multiple quantum-well semiconductor saturable absorber mirror (MQW-SESAM) structure has been investigated by femtosecond pump-probe laser spectroscopy at a…”
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  11. 11
  12. 12

    Plasmon enhanced light emission from InGaN quantum wells via coupling to chemically synthesized silver nanoparticles by Henson, John, Heckel, John C., Dimakis, Emmanouil, Abell, Josh, Bhattacharyya, Anirban, Chumanov, George, Moustakas, Theodore D., Paiella, Roberto

    Published in Applied physics letters (12-10-2009)
    “…Chemically synthesized single-crystal silver nanoparticles are used to demonstrate plasmon enhanced visible light emission from nitride semiconductor quantum…”
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  13. 13

    Separated Electronic and Strain Interfaces in Core/Dual‐Shell Nanowires: Unlocking the Potential of Strained GaAs for Applications Across Near‐Infrared by Sun, Xiaoxiao, Pashkin, Alexej, Moebus, Finn, Hübner, René, Winnerl, Stephan, Helm, Manfred, Dimakis, Emmanouil

    Published in Advanced functional materials (01-07-2024)
    “…Semiconductor nanowires have inspired plenty of novel nanotechnology device concepts in photonics, electronics, and sensing, owing to their unique…”
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  14. 14

    Nonlinear Charge Transport in InGaAs Nanowires at Terahertz Frequencies by Rana, Rakesh, Balaghi, Leila, Fotev, Ivan, Schneider, Harald, Helm, Manfred, Dimakis, Emmanouil, Pashkin, Alexej

    Published in Nano letters (13-05-2020)
    “…We probe the electron transport properties in the shell of GaAs/In0.2Ga0.8As core/shell nanowires at high electric fields using optical pump/THz probe…”
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  15. 15

    At the Limit of Interfacial Sharpness in Nanowire Axial Heterostructures by Hilliard, Donovan, Tauchnitz, Tina, Hübner, René, Vasileiadis, Isaak, Gkotinakos, Athanasios, Dimitrakopulos, George, Komninou, Philomela, Sun, Xiaoxiao, Winnerl, Stephan, Schneider, Harald, Helm, Manfred, Dimakis, Emmanouil

    Published in ACS nano (13-08-2024)
    “…As semiconductor devices approach dimensions at the atomic scale, controlling the compositional grading across heterointerfaces becomes paramount. Particularly…”
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  16. 16

    Shell-doping of GaAs nanowires with Si for n-type conductivity by Dimakis, Emmanouil, Ramsteiner, Manfred, Tahraoui, Abbes, Riechert, Henning, Geelhaar, Lutz

    Published in Nano research (01-11-2012)
    “…We demonstrate the potential of using Si as n-type dopant in GaAs nanowires grown by molecular beam epitaxy. The amphoteric behavior of Si that typically…”
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  17. 17

    Role of Liquid Indium in the Structural Purity of Wurtzite InAs Nanowires That Grow on Si(111) by Biermanns, Andreas, Dimakis, Emmanouil, Davydok, Anton, Sasaki, Takuo, Geelhaar, Lutz, Takahasi, Masamitu, Pietsch, Ullrich

    Published in Nano letters (10-12-2014)
    “…InAs nanowires that grow catalyst-free along the [111] crystallographic orientation are prone to wurtzite-zincblende polytypism, making the control of the…”
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  18. 18

    Droplet-Confined Alternate Pulsed Epitaxy of GaAs Nanowires on Si Substrates down to CMOS-Compatible Temperatures by Balaghi, Leila, Tauchnitz, Tina, Hübner, René, Bischoff, Lothar, Schneider, Harald, Helm, Manfred, Dimakis, Emmanouil

    Published in Nano letters (13-07-2016)
    “…We introduce droplet-confined alternate pulsed epitaxy for the self-catalyzed growth of GaAs nanowires on Si(111) substrates in the temperature range from 550…”
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  19. 19

    Hot-Electron Dynamics in a Semiconductor Nanowire under Intense THz Excitation by Luferau, Andrei, Obst, Maximilian, Winnerl, Stephan, Pashkin, Alexej, Kehr, Susanne C., Dimakis, Emmanouil, Kaps, Felix G., Hatem, Osama, Mavridou, Kalliopi, Eng, Lukas M., Helm, Manfred

    Published in ACS photonics (21-08-2024)
    “…We report terahertz (THz)-pump/mid-infrared probe near-field studies on Si-doped GaAs–InGaAs core–shell nanowires utilizing THz radiation from the…”
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  20. 20

    How Indium Nitride Senses Water by Jovic, Vedran, Moser, Simon, Ulstrup, Søren, Goodacre, Dana, Dimakis, Emmanouil, Koch, Roland, Katsoukis, Georgios, Moreschini, Luca, Mo, Sung-Kwan, Jozwiak, Chris, Bostwick, Aaron, Rotenberg, Eli, Moustakas, Theodore D, Smith, Kevin E

    Published in Nano letters (13-12-2017)
    “…The unique electronic band structure of indium nitride InN, part of the industrially significant III–N class of semiconductors, offers charge transport…”
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