Search Results - "Diestelhorst, R."

Multiple-Bit Upset in 130 nm CMOS Technology by Tipton, A.D., Pellish, J.A., Reed, R.A., Schrimpf, R.D., Weller, R.A., Mendenhall, M.H., Sierawski, B., Sutton, A.K., Diestelhorst, R.M., Espinel, G., Cressler, J.D., Marshall, P.W., Vizkelethy, G.

“…The probability of proton-induced multiple-bit upset (MBU) has increased in highly-scaled technologies because device dimensions are small relative to particle…”
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Single Event Transient Response of SiGe Voltage References and Its Impact on the Performance of Analog and Mixed-Signal Circuits by Najafizadeh, L., Phillips, S.D., Moen, K.A., Diestelhorst, R.M., Bellini, M., Saha, P.K., Cressler, J.D., Vizkelethy, G., Turowski, M., Raman, A., Marshall, P.W.

“…We investigate the single-event transient (SET) response of bandgap voltage references (BGRs) implemented in SiGe BiCMOS technology through heavy ion microbeam…”
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Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs by Pellish, J.A., Reed, R.A., McMorrow, D., Vizkelethy, G., Cavrois, V.F., Baggio, J., Paillet, P., Duhamel, O., Moen, K.A., Phillips, S.D., Diestelhorst, R.M., Cressler, J.D., Sutton, A.K., Raman, A., Turowski, M., Dodd, P.E., Alles, M.L., Schrimpf, R.D., Marshall, P.W., LaBel, K.A.

“…Silicon-germanium heterojunction bipolar transistor (SiGe HBT) heavy ion-induced current transients are measured using Sandia National Laboratories' microbeam…”
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An Investigation of Dose Rate and Source Dependent Effects in 200 GHz SiGe HBTs by Sutton, A.K., Prakash, A.P.G., Bongim Jun, Enhai Zhao, Bellini, M., Pellish, J., Diestelhorst, R.M., Carts, M.A., Phan, A., Ladbury, R., Cressler, J.D., Marshall, Paul.W., Marshall, C.J., Reed, R.A., Schrimpf, R.D., Fleetwood, D.M.

“…We present an investigation of the observed variations in the total dose tolerance of the emitter-base spacer and shallow trench isolation oxides in a…”
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Substrate Engineering Concepts to Mitigate Charge Collection in Deep Trench Isolation Technologies by Pellish, J.A., Reed, R.A., Schrimpf, R.D., Alles, M.L., Varadharajaperumal, M., Guofu Niu, Sutton, A.K., Diestelhorst, R.M., Espinel, G., Krithivasan, R., Comeau, J.P., Cressler, J.D., Vizkelethy, G., Marshall, P.W., Weller, R.A., Mendenhall, M.H., Montes, E.J.

“…Delayed charge collection from ionizing events outside the deep trench can increase the SEU cross section in deep trench isolation technologies. Microbeam test…”
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Single Event Upset Mechanisms for Low-Energy-Deposition Events in SiGe HBTs by Montes, E.J., Reed, R.A., Pellish, J.A., Alles, M.L., Schrimpf, R.D., Weller, R.A., Varadharajaperumal, M., Niu, G., Sutton, A.K., Diestelhorst, R., Espinel, G., Krithivasan, R., Comeau, J.P., Cressler, J.D., Marshall, P.W., Vizkelethy, G.

“…Microbeam measurements and TCAD simulations are used to examine the effects of ion angle of incidence on the charge collected from events occurring in a…”
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The Effects of Irradiation Temperature on the Proton Response of SiGe HBTs by Prakash, A.P.G., Sutton, A.K., Diestelhorst, R.M., Espinel, G., Andrews, J., Bongim Jun, Cressler, J.D., Marshall, P.W., Marshall, C.J.

“…We compare, for the first time, the effects of 63 MeV protons on 1st generation and 3rd generation SiGe HBTs irradiated at both liquid nitrogen temperature (77…”
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Junction Isolation Single Event Radiation Hardening of a 200 GHz SiGe:C HBT Technology Without Deep Trench Isolation by Diestelhorst, R.M., Phillips, S.D., Appaswamy, A., Sutton, A.K., Cressler, J.D., Pellish, J.A., Reed, R.A., Vizkelethy, G., Marshall, P.W., Gustat, H., Heinemann, B., Fischer, G.G., Knoll, D., Tillack, B.

“…We investigate a novel implementation of junction isolation to harden a 200 GHz SiGe:C HBT technology without deep trench isolation against single event…”
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Temperature-Dependence of Off-State Drain Leakage in X-Ray Irradiated 130 nm CMOS Devices by Bongim Jun, Diestelhorst, R.M., Bellini, M., Espinel, G., Appaswamy, A., Prakash, A.P.G., Cressler, J.D., Dakai Chen, Schrimpf, R.D., Fleetwood, D.M., Turowski, M., Raman, A.

“…The off-state drain current leakage characteristics of 130 nm CMOS technology are investigated using x-ray irradiation and operating temperature as variables…”
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A 6-20 GHz Adaptive SiGe Image Reject Mixer for a Self-Healing Receiver by Saha, P. K., Howard, D. C., Shankar, S., Diestelhorst, R., England, T., Cressler, J. D.

“…A wideband (6-20 GHz) Silicon-Germanium (SiGe) adaptive image-reject mixer with an intermediate frequency (IF) of 1.8 GHz is presented. The mixer can be…”
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An 8-16 GHz SiGe Low Noise Amplifier With Performance Tuning Capability for Mitigation of Radiation-Induced Performance Loss by Howard, D. C., Saha, P. K., Shankar, S., Diestelhorst, R. M., England, T. D., Lourenco, N. E., Kenyon, E., Cressler, J. D.

“…We present a wideband, low noise amplifier (LNA) implemented in a Silicon-Germanium Heterojunction Bipolar Transistor (SiGe HBT) technology. This SiGe LNA…”
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Laser-Induced Current Transients in Silicon-Germanium HBTs by Pellish, J.A., Reed, R.A., McMorrow, D., Melinger, J.S., Jenkins, P., Sutton, A.K., Diestelhorst, R.M., Phillips, S.D., Cressler, J.D., Pouget, V., Pate, N.D., Kozub, J.A., Mendenhall, M.H., Weller, R.A., Schrimpf, R.D., Marshall, P.W., Tipton, A.D., Niu, G.

“…Device-level current transients are induced by injecting carriers using two-photon absorption from a subbandgap pulsed laser and recorded using wideband…”
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A Comprehensive Understanding of the Efficacy of N-Ring SEE Hardening Methodologies in SiGe HBTs by Phillips, S D, Moen, K A, Najafizadeh, L, Diestelhorst, R M, Sutton, A K, Cressler, J D, Vizkelethy, G, Dodd, P E, Marshall, P W

“…We investigate the efficacy of mitigating radiation-based single event effects (SEE) within circuits incorporating SiGe heterojunction bipolar transistors…”
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Novel Total Dose and Heavy-Ion Charge Collection Phenomena in a New SiGe HBT on >Thin-Film SOI Technology by Bellini, M., Phillips, S.D., Diestelhorst, R.M., Cheng, P., Cressler, J.D., Marshall, P.W., Turowski, M., Avenier, G., Chantre, A., Chevalier, P.

“…We investigate radiation-induced effects on the DC, AC and thermal characteristics of high-performance SiGe HBTs fabricated on thin-film SOI. TCAD simulations…”
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A Comparison of the Effects of X-Ray and Proton Irradiation on the Performance of SiGe Precision Voltage References by Najafizadeh, L., Sutton, A.K., Diestelhorst, R.M., Bellini, M., Bongim Jun, Cressler, J.D., Marshall, P.W., Marshall, C.J.

“…A comprehensive investigation of the performance dependencies of irradiated SiGe precision voltage reference circuits on (1) total ionizing dose (TID), (2)…”
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The Effects of X-Ray and Proton Irradiation on a 200 GHz/90 GHz Complementary (npn + pnp) SiGe:C HBT Technology by Diestelhorst, R.M., Finn, S., Bongim Jun, Sutton, A.K., Peng Cheng, Marshall, P.W., Cressler, J.D., Schrimpf, R.D., Fleetwood, D.M., Gustat, H., Heinemann, B., Fischer, G.G., Knoll, D., Tillack, B.

“…We investigate the effects of both X-ray and proton irradiation on a novel 200 GHz/90 GHz (npn/pnp) complementary SiGe:C HBT technology. The DC forward mode…”
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A UWB SiGe LNA for multi-band applications with self-healing based on DC extraction of device characteristics by Howard, D. C., Saha, P., Shankar, S., Diestelhorst, R., England, T., Cressler, J. D.

“…We present an ultra-wideband, Low Noise Amplifier (LNA) implemented in a Silicon-Germanium Heterojunction Bipolar Transistor (SiGe HBT) technology. This SiGe…”
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The Application of RHBD to n-MOSFETs Intended for Use in Cryogenic-Temperature Radiation Environments by Jun Bongim, Sutton, A.K., Diestelhorst, R.M., Duperon, G.J., Cressler, J.D., Black, J.D., Haeffner, T., Reed, R.A., Alles, M.L., Schrimpf, R.D., Fleetwood, D.M., Marshall, P.W.

“…Proton and X-ray irradiation effects are investigated in 0.35 m conventional, annular, and ringed-source radiation-hardening-by-design (RHBD) CMOS devices…”
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An adaptive, wideband SiGe image reject mixer for a self-healing receiver by Saha, P. K., Howard, D., Shankar, S., Diestelhorst, R., England, T., Cressler, J. D.

“…A wideband (6-20 GHz) SiGe adaptive image reject mixer with an IF bandwidth of more than 1.8 GHz is presented. The mixer can be "self-healed" to deliver…”
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On-die self-healing of mixer image-rejection ratio for mixed-signal electronic systems by Shankar, S., Saha, P., Howard, D. C., Diestelhorst, R., England, T. D., Cardoso, A. S., Cressler, J. D.

“…An integrated wideband (6-20 GHz) image-reject mixer and test signal source for "self-healing" of image-rejection ratio (IRR) is demonstrated for the first…”
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