Search Results - "Dierre, B."

Zn vacancy induced green luminescence on non-polar surfaces in ZnO nanostructures by Fabbri, F., Villani, M., Catellani, A., Calzolari, A., Cicero, G., Calestani, D., Calestani, G., Zappettini, A., Dierre, B., Sekiguchi, T., Salviati, G.

“…Although generally ascribed to the presence of defects, an ultimate assignment of the different contributions to the emission spectrum in terms of surface…”
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Blue-emitting AlN:Eu2+ nitride phosphor for field emission displays by Hirosaki, N., Xie, R.-J., Inoue, K., Sekiguchi, T., Dierre, B., Tamura, K.

“…An Eu2+-activated AlN phosphor was synthesized by firing the powder mixture of AlN, α-Si3N4, and Eu2O3 at 2050°C for 4h under 1.0MPa N2. This nitride phosphor…”
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Zn vacancy induced green luminescence on non-polar surfaces in ZnO nanostructures by Fabbri, F., Villani, M., Catellani, A., Calzolari, A., Cicero, G., Calestani, D., Calestani, G., Zappettini, A., Dierre, B., Sekiguchi, T., Salviati, G.

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Ion irradiation induced formation of CdO microcrystals on CdTe surfaces by Fabbri, F., Armani, N., Dierre, B., Sekiguchi, T., Plaza, J.L., Martinez, O., Salviati, G.

“…Formation of cadmium oxide microcrystals, induced by Ar ion irradiation, on CdTe crystals is reported. The formation of the oxide crystallites is proved by the…”
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Effects of Chemical Treatment on the Luminescence of ZnO by Dierre, B., Yuan, X. L., Armani, N., Fabbri, F., Salviati, G., Ueda, K., Sekiguchi, T.

“…The effects of chemical treatment on the luminescence of ZnO were investigated by cathodoluminescence. For this purpose, ZnO ceramics and O- and Zn-terminated…”
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Spatial distribution of impurities in ZnO nanotubes characterized by cathodoluminescence by Yuan, X L, Dierre, B, Wang, J B, Zhang, B P, Sekiguchi, T

“…Low-energy cathodoluminescence (CL) imaging and spectroscopy technique was employed to study the impurity distribution in individual ZnO hexagonal nanotubes…”
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Luminescence properties of Ca- and Yb-codoped SiAlON phosphors by Dierre, B., Yuan, X.L., Hirosaki, N., Xie, R.J., Sekiguchi, T.

“…Luminescence properties of SiAlON phosphors codoped with Ca and Yb were investigated by changing the host lattice composition. These modifications of the host…”
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Impact of electron beam irradiation on the cathodoluminescence intensity for ZnO and GaN by Dierre, B., Yuan, X. L., Yao, Y. Z., Yokoyama, M., Sekiguchi, T.

“…We have studied the effect of the electron beam irradiation on ZnO and GaN by using cathodoluminescence (CL). The bandedge emissions of ZnO and GaN usually…”
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Cathodoluminescence characterization of β-SiC nanowires and surface-related silicon dioxide by Fabbri, F., Cavallini, A., Attolini, G., Rossi, F., Salviati, G., Dierre, B., Fukata, N., Sekiguchi, T.

“…The main goal of our study is to prepare and to understand the properties of cubic SiC nanowires (NWs) and to characterize its native silicon dioxide. The…”
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Single‐Crystalline ZnS Nanobelts as Ultraviolet‐Light Sensors by Fang, Xiaosheng, Bando, Yoshio, Liao, Meiyong, Gautam, Ujjal K., Zhi, Chunyi, Dierre, Benjamin, Liu, Baodan, Zhai, Tianyou, Sekiguchi, Takashi, Koide, Yasuo, Golberg, Dmitri

“…Single‐crystalline ZnS nanobelts with sharp ultraviolet‐light emission (∼337 nm) at room temperature have been assembled as UV Sensors. The high spectral…”
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Thermal quenching of Eu 2+ emission in Ca- and Sr-Ga 2 S 4 in relation with VRBE schemes by Dobrowolska, A., Dierre, B., Fang, C.M., Hintzen, H.T., Dorenbos, P.

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Thermal quenching of Eu2+ emission in Ca- and Sr-Ga2S4 in relation with VRBE schemes by Dobrowolska, A., Dierre, B., Fang, C.M., Hintzen, H.T., Dorenbos, P.

“…Structural and optical properties of MGa2S4 (M = Mg, Zn, Ca, Sr, Ba) compounds have been compared, and the vacuum referred binding energy (VRBE) schemes were…”
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Hydrogen desorption effect on cathodoluminescence of ZnO by Dierre, B., Yuan, X.L., Ishigaki, T., Ueda, K., Sekiguchi, T.

“…The effects of the low-energy electron beam on ZnO single crystals were investigated by cathodoluminescence (CL), Time-of-Flight Electron Stimulated Desorption…”
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Blue emission of Ce3+ in lanthanide silicon oxynitride phosphors by Dierre, Benjamin, Xie, Rong-Jun, Hirosaki, Naoto, Sekiguchi, T.

“…Ce3+-activated lanthanide silicon oxynitride (La5Si3O12N, La4SiO7N2, LaSiO2N, and La3Si8O4N11) phosphors were prepared by firing the mixture of La2O3, Si3N4,…”
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Luminescence distribution of Yb-doped Ca-α-SiAlON phosphors by Dierre, B., Yuan, X.L., Hirosaki, N., Kimura, T., Xie, R-J., Sekiguchi, T.

“…Luminescence properties of Yb-doped Ca-α-SiAlON phosphors with composition of Ca1−xYbxSi12−(m+n)Alm+nOnN16−n were investigated by using cathodoluminescence…”
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ROLE OF Si IN THE LUMINESCENCE OF AlN:Eu,Si by Dierre, B, Yuan, X L, Inoue, K, Hirosaki, N, Xie, R-J, Sekiguchi, T

“…The luminescence properties of Si,Eu-codoped AlN were investigated by means of The concentration of Eu was kept constant while of Si was varied from 0 to 9.0…”
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Surface effects on the luminescence degradation of hydride vapor-phase epitaxy-grown GaN induced by electron-beam irradiation by Wang, Y., Dierre, B., Sekiguchi, T., Yao, Y. Z., Yuan, X. L., Xu, F. J., Shen, B.

“…Luminescence degradation of hydride vapor-phase epitaxy-grown GaN wafers under electron-beam (e-beam) irradiation was studied. A drastic decrease in the…”
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Preparation and Cathodoluminescence of Mg-Doped and Zn-Doped GaN Powders by Li, Hui-Li, Xie, Rong-Jun, Hirosaki, Naoto, Dierre, Berjamin, Sekiguchi, Takashi, Yajima, Yoshiyoki

“…In this paper, undoped, Mg‐ and Zn‐doped gallium nitride powders were prepared by direct nitridation of Ga2O3 under a flowing NH3 gas. The phase purity,…”
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Luminescence distribution of Yb-doped Ca-a-SiAlON phosphors by Dierre, B, Yuan, X L, Hirosaki, N, Kimura, T, Xie, R-J, Sekiguchi, T

“…Luminescence properties of Yb-doped Ca-a-SiAlON phosphors with composition of Ca1-xYbxSi12-(m+n)Alm+nOnN16-n were investigated by using cathodoluminescence…”
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Blue-emitting Al N : Eu 2 + nitride phosphor for field emission displays by Hirosaki, N., Xie, R.-J., Inoue, K., Sekiguchi, T., Dierre, B., Tamura, K.

“…An Eu 2 + -activated AlN phosphor was synthesized by firing the powder mixture of AlN, α - Si 3 N 4 , and Eu 2 O 3 at 2050 ° C for 4 h under 1.0 MPa N 2 . This…”
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