Search Results - "Dierolf, V"

Rotating lattice single crystal architecture on the surface of glass by Savytskii, D., Jain, H., Tamura, N., Dierolf, V.

“…Defying the requirements of translational periodicity in 3D, rotation of the lattice orientation within an otherwise single crystal provides a new form of…”
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Vibrationally induced center reconfiguration in co-doped GaN:Eu, Mg epitaxial layers: Local hydrogen migration vs. activation of non-radiative channels by Mitchell, B., Lee, D., Lee, D., Fujiwara, Y., Dierolf, V.

“…Europium doped gallium nitride (GaN:Eu) is a promising candidate as a material for red light emitting diodes. When Mg was co-doped into GaN:Eu, additional…”
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Laser-induced growth of oriented Sb2S3 single crystal dots on the surface of 82SbSI–18Sb2S3 glasses by Savytskii, D., Knorr, B., Dierolf, V., Jain, H.

“…To produce ferroelectric single-crystal architecture on glass surface by laser irradiation, usually the starting structure is a dot. Therefore, we have…”
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Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications by Mitchell, B., Timmerman, D., Poplawsky, J., Zhu, W., Lee, D., Wakamatsu, R., Takatsu, J., Matsuda, M., Guo, W., Lorenz, K., Alves, E., Koizumi, A., Dierolf, V., Fujiwara, Y.

“…The detrimental influence of oxygen on the performance and reliability of V/III nitride based devices is well known. However, the influence of oxygen on the…”
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Site and sample dependent electron–phonon coupling of Eu ions in epitaxial-grown GaN layers by Woodward, N., Nishikawa, A., Fujiwara, Y., Dierolf, V.

“…The incorporation of Eu ions into GaN has been studied using combined excitation–emission spectroscopy for samples that were in situ doped during…”
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Cascaded optical parametric oscillations generating tunable terahertz waves in periodically poled lithium niobate crystals by Kiessling, J, Sowade, R, Breunig, I, Buse, K, Dierolf, V

“…We present a continuous-wave (cw) singly-resonant optical parametric oscillator (SROPO) based on MgO-doped periodically poled lithium niobate (PPLN) delivering…”
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Excitation pathways and efficiency of Eu ions in GaN by site-selective spectroscopy by Fleischman, Z., Munasinghe, C., Steckl, A. J., Wakahara, A., Zavada, J., Dierolf, V.

“…Using combined excitation emission spectroscopy, we performed a comparative study of europium ions in GaN in samples that have been in situ doped during…”
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Excitation of Eu3+ in gallium nitride epitaxial layers: Majority versus trap defect center by Woodward, N., Poplawsky, J., Mitchell, B., Nishikawa, A., Fujiwara, Y., Dierolf, V.

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Three-dimensional grain boundary spectroscopy in transparent high power ceramic laser materials by Ramirez, Mariola O, Wisdom, Jeffrey, Li, Haifeng, Aung, Yan L, Stitt, Joseph, Messing, Gary L, Dierolf, V, Liu, Zhiwen, Ikesue, Akio, Byer, Robert L, Gopalan, Venkatraman

“…Using confocal Raman and fluorescence spectroscopic imaging in 3-dimensions, we show direct evidence of inhomogeneous Nd(3+) distribution across grain…”
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Formation of ferroelectric single-crystal architectures in LaBGeO5 glass by femtosecond vs. continuous-wave lasers by STONE, A, SAKAKURA, M, SHIMOTSUMA, Y, STONE, G, GUPTA, P, MIURA, K, HIRAO, K, DIEROLF, V, JAIN, H

“…We have succeeded in crystallizing LaBGeO5 glass with an 800nm, 250kHz repetition rate femtosecond laser and observed different crystallization behavior when…”
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Formation of laser-induced SbSI single crystal architecture in Sb–S–I glasses by Savytskii, D., Knorr, B., Dierolf, V., Jain, H.

“…We report the successful fabrication of active single-crystal architectures in IR transparent Sb–S–I chalcogenide glasses using a CW 488nm laser. Electron back…”
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Combined excitation emission spectroscopy of defects for site-selective probing of ferroelectric domain inversion in lithium niobate by Dierolf, V., Sandmann, C.

“…We review our detailed optical characterization of Er and Cr defects in LiNbO 3 and utilize the obtained knowledge for the investigation of ferroelectric…”
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Inspection of periodically poled waveguide devices by confocal luminescence microscopy by DIEROLF, V, SANDMANN, C

“…Using confocal defect-luminescence microscopy, we investigated Er-doped periodically-poled LiNbO3 waveguide devices and found that the Er ion and vibrational…”
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Enhanced magnetization in erbium doped GaN thin films due to strain induced electric fields by Woodward, N. T., Nepal, N., Mitchell, B., Feng, I. W., Li, J., Jiang, H. X., Lin, J. Y., Zavada, J. M., Dierolf, V.

“…The ferromagnetic properties of erbium-doped GaN (GaN:Er) epilayers grown by metal-organic chemical vapor deposition were studied. It is found that the…”
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Enhanced room-temperature luminescence efficiency through carrier localization in AlxGa1−xN alloys by Collins, C. J., Sampath, A. V., Garrett, G. A., Sarney, W. L., Shen, H., Wraback, M., Nikiforov, A. Yu, Cargill, G. S., Dierolf, V.

“…AlGaN samples grown by plasma-assisted molecular-beam epitaxy on sapphire (0001) substrates, with 20%–50% Al content and without the use of indium, show…”
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Influence of heat and UV light on the coercive field of lithium niobate crystals by Steigerwald, H., von Cube, F., Luedtke, F., Dierolf, V., Buse, K.

“…Heating and UV illumination reduce the coercive field of lithium niobate crystals. It is found that both effects add up, leading to the conclusion that the…”
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Characterization of new erbium-doped tellurite glasses and fibers by Marjanovic, S., Toulouse, J., Jain, H., Sandmann, C., Dierolf, V., Kortan, A.R., Kopylov, N., Ahrens, R.G.

“…Tellurite glasses are promising candidates for optical fiber laser and amplifier applications because of their excellent optical and chemical properties. The…”
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Site-specific excitation of Eu ions in GaN by Tafon Penn, S., Fleischman, Z., Dierolf, V.

“…We performed cathodoluminescence (CL) studies on Eu‐doped GaN layers that were grown using the Interrupted Growth Epitaxy (IGE) method. We compare these…”
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Optical and magneto-optical properties of erbium doped InGaN and GaN epilayers by Woodward, N., Dierolf, V., Lin, J.Y., Jiang, H.X., Zavada, J.M.

“…Using combined excitation–emission spectroscopy we have studied the erbium incorporation into GaN and InGaN for in situ doped MOCVD-grown layers and compared…”
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Microscopic structure and energy transfer of vacancy-related defect pairs with Erbium in wide-gap semiconductors by Konopka, A., Greulich-Weber, S., Dierolf, V., Jiang, H.X., Gerstmann, U., Rauls, E., Sanna, S., Schmidt, W.G.

“…► We studied microscopic structure of Er-related defect states in GaN and SiC. ► Results of EPR measurements are shown. ► LDA+U total energy calculation in the…”
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