Search Results - "Diebold, C"
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Enhanced Optical Second-Harmonic Generation from the Current-Biased Graphene/SiO2/Si(001) Structure
Published in Nano letters (08-05-2013)“…We find that optical second-harmonic generation (SHG) in reflection from a chemical-vapor-deposition graphene monolayer transferred onto a SiO2/Si(001)…”
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Optical properties of large-area polycrystalline chemical vapor deposited graphene by spectroscopic ellipsometry
Published in Applied physics letters (20-12-2010)“…Spectroscopic ellipsometry was used to characterize the complex refractive index of chemical vapor deposition (CVD) graphene grown on copper foils and…”
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3
Perspective: Optical measurement of feature dimensions and shapes by scatterometry
Published in APL materials (01-05-2018)“…The use of optical scattering to measure feature shape and dimensions, scatterometry, is now routine during semiconductor manufacturing. Scatterometry…”
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3D-interconnect: Visualization of extrusion and voids induced in copper-filled through-silicon vias (TSVs) at various temperatures using X-ray microscopy
Published in Microelectronic engineering (01-04-2012)“…X-ray micrographs compare a 4μm TSV before (A) and after 225°C annealing (B). The copper extrusion and voids-induced at the center of TSV are clearly seen…”
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Journal Article Conference Proceeding -
5
Electron-phonon interaction effects on the direct gap transitions of nanoscale Si films
Published in Applied physics letters (10-10-2011)“…This study shows that the dielectric function of crystalline Si quantum wells ( c -Si QW) is influenced by both carrier confinement and electron-phonon…”
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Atomic layer deposited ultrathin metal nitride barrier layers for ruthenium interconnect applications
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-05-2017)“…Resistance capacitance time delay in Cu interconnects is becoming a significant factor requiring further performance improvements in future nanoelectronic…”
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Dielectric properties and thickness metrology of strain engineered GaN/AlN/Si (111) thin films grown by MOCVD
Published in Thin solid films (28-02-2011)“…Maturity of silicon nanoelectronics and the high quality of 300mm epi-Si wafers make these substrates an ideal choice for the growth of high quality…”
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Investigation of optical properties of benzocyclobutene wafer bonding layer used for 3D interconnects via infrared spectroscopic ellipsometry
Published in Thin solid films (28-02-2011)“…Benzocyclobutene (BCB) used for bonding silicon wafers to enable 3D interconnect technology is characterized using spectroscopic ellipsometry (SE). SE is a…”
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9
Subsurface Imaging with Scanning Ultrasound Holography
Published in Science (American Association for the Advancement of Science) (07-10-2005)“…Characterization of subsurface structure is critical to almost every area of science and engineering. Every innovative microscopy technique seems to highlight…”
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Observation of quantum confinement and quantum size effects
Published in Physica status solidi. A, Applications and materials science (01-04-2008)“…Recently, the change in optical properties of ultra‐thin silicon on insulator films was shown to be due to quantum confinement. The E1 critical point shifted…”
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11
Optical second-harmonic generation induced by electric current in graphene on Si and SiC substrates
Published in Physical review. B, Condensed matter and materials physics (12-03-2014)“…We find that the flow of direct electric current (dc) through graphene on substrate enhances surface optical second-harmonic generation (SHG) from the…”
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Electronic Excitations in Graphene in the 1–50 eV Range: The π and π + σ Peaks Are Not Plasmons
Published in Nano letters (09-07-2014)“…The field of plasmonics relies on light coupling strongly to plasmons as collective excitations. The energy loss function of graphene is dominated by two peaks…”
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Enhanced optical transmission by light coaxing: Mechanism of the TEM-mode excitation
Published in Micron (Oxford, England : 1993) (01-10-2010)“…This paper presents a theoretical study showing the mechanism of light transmission through opaque metallic films perforated with nanocoaxial apertures thanks…”
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Enhancing one dimensional sensitivity with plasmonic coupling: erratum
Published in Optics express (22-02-2016)“…Our manuscript contained data from unconverged rigorous coupled wave approximation (RCWA) simulations that resulted in incorrect description of minima…”
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Enhancing one dimensional sensitivity with plasmonic coupling
Published in Optics express (20-10-2014)“…In this paper, we propose a cross-grating structure to enhance the critical dimension sensitivity of one dimensional nanometer scale metal gratings. Making use…”
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Quantifying non-centrosymmetric orthorhombic phase fraction in 10 nm ferroelectric Hf0.5Zr0.5O2 films
Published in Applied physics letters (28-12-2020)“…In this Letter, we report the percentage of the ferroelectric phase in a 10-nm-thick Hf0.5Zr0.5O2 (HZO) film deposited in a metal-insulator-metal stack by…”
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Observation of interfacial electrostatic field-induced changes in the silicon dielectric function using spectroscopic ellipsometry
Published in Physica status solidi. A, Applications and materials science (01-04-2008)“…This work investigates the capability of spectroscopic ellipsometry to measure charge trapping centers in thin dielectric films. Specific interfacial…”
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18
The Impact of Medicare Part D on Self-Employment
Published in Research on aging (01-01-2017)“…We explore the relationship between access to affordable health insurance and self-employment using exogenous variation from the introduction of Medicare Part…”
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Thin dielectric film thickness determination by advanced transmission electron microscopy
Published in Microscopy and microanalysis (01-12-2003)“…High-resolution transmission electron microscopy (HR-TEM) has been used as the ultimate method of thickness measurement for thin films. The appearance of phase…”
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Application of Aberration-Corrected TEM and Image Simulation to Nanoelectronics and Nanotechnology
Published in IEEE transactions on semiconductor manufacturing (01-11-2006)“…The image quality in electron microscopy often suffers from lens aberration. As a result of lens aberrations, critical information appears distorted at the…”
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