Search Results - "Dibi, Z."
-
1
Neural Network Technique for Electronic Nose Based on High Sensitivity Sensors Array
Published in Sensing and imaging (01-12-2019)“…Electronic Nose, as an artificial olfaction system, has potential applications in environmental monitoring because of its proven ability to recognize and…”
Get full text
Journal Article -
2
Analytical analysis of nanoscale multiple gate MOSFETs including effects of hot-carrier induced interface charges
Published in Microelectronics and reliability (01-04-2009)“…As the channel length rapidly shrinks down to the nanoscale regime, the multiple gate MOSFETs structures have been considered as potential candidates for a…”
Get full text
Journal Article -
3
Impact of triple-material gate and highly doped source/drain extensions on sensitivity of DNA biosensors
Published in Journal of computational electronics (01-12-2018)“…Gate engineering and highly doped source/drain region have been investigated to design a new DNA sensor for use in biomedical applications based on a double…”
Get full text
Journal Article -
4
Modeling a new acetone sensor based on carbon nanotubes using finite elements and neural network
Published in European physical journal plus (01-06-2018)“… The objective of this study is to model and simulate the behavior of a new biosensor based on carbon nanotubes to detect, automatically and autonomously, the…”
Get full text
Journal Article -
5
An optimized metal grid design to improve the solar cell performance under solar concentration using multiobjective computation
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15-05-2013)“…► A new MOGA-based approach to design the solar cell metal grid is proposed. ► The cell parameters have been ascertained including the high illumination…”
Get full text
Journal Article -
6
Electrical equivalent model of intermediate band solar cell using PSpice
Published in Sadhana (Bangalore) (15-09-2015)“…Intermediate band solar cells (IBSCS) is a relatively new solar cell concept. The theoretical conversion efficiency limit for IBSCS is predicted to be 63.2%…”
Get full text
Journal Article -
7
A neural approach to study the scaling capability of the undoped Double-Gate and cylindrical Gate All Around MOSFETs
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15-02-2008)“…The Double-Gate and Gate All Around MOSFETs are two of the most promising candidates for the scaling of CMOS technology down to nanometer range. The excellent…”
Get full text
Journal Article -
8
A two-dimensional analytical subthreshold behavior analysis including hot-carrier effect for nanoscale Gate Stack Gate All Around (GASGAA) MOSFETs
Published in Journal of computational electronics (01-06-2011)“…The Gate All Around (GAA) MOSFET is considered as one of the most promising devices for downscaling below 50 nm. By surrounding the channel completely, the…”
Get full text
Journal Article -
9
Electrical and optical properties of Black Phosphorus under Strain effects: A First-principles Study
Published in 2022 19th International Multi-Conference on Systems, Signals & Devices (SSD) (06-05-2022)“…In this work, the impact of the pressure on the electronic and optical characteristics of bulk Black Phosphorus (BP) is investigated using first principles…”
Get full text
Conference Proceeding -
10
Performance analysis of SnS photodetector using strained SnO2 stacked layer: Numerical simulation and DFT calculations
Published in Microelectronic engineering (15-03-2023)“…In this work, a new broadband Photodetector (PD) based on strained-SnO2/SnS heterostructure combined with back grooves aspect is proposed. First-principles…”
Get full text
Journal Article -
11
Characterisation and modelling of the mismatch of TCRs and their effects on the drift of the offset voltage of piezoresistive pressure sensors
Published in Sensors and actuators. A. Physical. (01-09-2000)“…Based on the assumption that each piezoresistor of a silicon pressure sensor has its own temperature coefficients (TCRs of the first and second order), a…”
Get full text
Journal Article -
12
DFT-FDTD modeling of a new broadband mid-infrared IGZO thin-film phototransistor based on black phosphorus capping layer incorporating intermediate metallic film
Published in The Journal of physics and chemistry of solids (01-03-2022)“…Here we present a new broadband mid-Infrared (mid-IR) InGaZnO (IGZO) thin-film phototransistor (TF PT) based on both Black Phosphorus (BP) capping layer…”
Get full text
Journal Article -
13
Design and simulation of a nanoelectronic DG MOSFET current source using artificial neural networks
Published in Materials Science & Engineering C (01-09-2007)“…The double gate (DG) MOSFET has received great attention in recent years owing to the inherent suppression of short channel effects (SCEs), excellent…”
Get full text
Journal Article -
14
Role of metal layer in improving the UV-photodetector performance of TiO2/Metal/TiO2/Si structure
Published in Journal of luminescence (01-11-2017)“…In this paper, a new metallic thin film engineering aspect is proposed to achieve superior absorption for TiO2/Metal/TiO2 on Silicon substrate UV-based…”
Get full text
Journal Article -
15
Role of metal layer in improving the UV-photodetector performance of TiO 2 /Metal/TiO 2 /Si structure
Published in Journal of luminescence (01-11-2017)Get full text
Journal Article -
16
A new smart nanoforce sensor based on suspended gate SOIMOSFET using carbon nanotube
Published in Measurement : journal of the International Measurement Confederation (01-09-2018)“…This paper presents a new nanoforce sensor based on a suspended carbon nanotube gate field-effect transistor. To do so, a numerical investigation of Suspended…”
Get full text
Journal Article -
17
Performance analysis of a new graphene based-phototransistor for ultra-sensitive infrared sensing applications
Published in Optik (Stuttgart) (01-01-2019)“…In this paper, a new Graphene nanoribbon (GNR) based Ge-phototransistor is proposed and investigated numerically by self-consistently solving the Schrödinger…”
Get full text
Journal Article -
18
Depth Resolution Enhancement Technique for CMOS Time-of-Flight 3-D Image Sensors
Published in IEEE sensors journal (01-06-2012)“…Introducing Time-of-Flight 3-D image sensors to actual engineering applications, such as pattern recognition, is constrained not only by their limited depth…”
Get full text
Journal Article -
19
Neural network modeling of smart nanostructure sensor for electronic nose application
Published in 2017 6th International Conference on Systems and Control (ICSC) (01-05-2017)“…Electronic nose applications in environmental monitoring are nowadays of great interest, because of the instruments proven capability of recognizing and…”
Get full text
Conference Proceeding -
20
First-principles Study of the Electronic and Optical Properties of SnO2 Under Strain Effects
Published in 2022 36th Symposium on Microelectronics Technology (SBMICRO) (22-08-2022)“…In this work, the effect of strain on the electronic and optical characteristics of Tin oxide (SnO 2 ) is analyzed using density functional theory (DFT)…”
Get full text
Conference Proceeding