Search Results - "Dias da Silva, J.H."

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  1. 1

    Crystallization of amorphous GaAs films prepared onto different substrates by Campomanes, R.R, Dias da Silva, J.H, Vilcarromero, J, Cardoso, L.P

    Published in Journal of non-crystalline solids (01-04-2002)
    “…This work reports changes in structural properties produced by thermal annealing of flash evaporated amorphous GaAs films using the micro-Raman scattering and…”
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    Journal Article
  2. 2

    Disorder effects produced by the Mn and H incorporations on the optical absorption edge of Ga 1− x Mn x As:H nanocrystalline films by Pereira, André L.J., da Silva, J.H. Dias

    Published in Journal of non-crystalline solids (2008)
    “…The optical absorption edges of nanocrystalline Ga 1− x Mn x As:H films (0.000 ⩽ x ⩽ 0.081) prepared by sputtering were analyzed. The influence of Mn and…”
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    Journal Article
  3. 3

    Thermodynamic and electronic study of Ga 1 − x Mn xN films. A theoretical study by Gomes, M.C., Leite, D.M.G., Sambrano, J.R., da Silva, J.H. Dias, de Souza, A.R., Beltrán, A.

    Published in Surface science (2011)
    “…Periodic slab calculations based on density functional theory were performed at the B3LYP level to gain insight into the surfaces of wurtzite GaN…”
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    Journal Article
  4. 4

    Columnar microstructure of nanocrystalline Ga 1− x Mn x N films deposited by reactive sputtering by Leite, D.M.G., Li, T., Devillers, T., Schiaber, Z.S., Lisboa-Filho, P.N., Bonanni, A., Dias da Silva, J.H.

    Published in Journal of crystal growth (2011)
    “…Ga 1− x Mn x N (0≤ x≤0.18) films grown onto amorphous silica substrate by reactive sputtering are characterised by high resolution transmission electron…”
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    Journal Article
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  8. 8

    Nanocrystalline Ga 1− x Mn x N films grown by reactive sputtering by Leite, D.M.G., da Silva, L.F., Pereira, A.L.J., Dias da Silva, J.H.

    Published in Journal of crystal growth (2006)
    “…The growth of nanocrystalline Ga 1− x Mn x N (0.00⩽ x⩽0.18) films grown by reactive RF-magnetron sputtering is focused here for the first time. The films were…”
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    Journal Article
  9. 9

    Effect of hydrogenation on the optical and structural properties of GaAs thin films prepared by rf-magnetron sputtering by Azevedo, G. de M., Dias da Silva, J.H., Avendaño, E.

    “…We have utilized infra-red and optical absorption measurements, grazing incidence X-ray diffraction (GIXRD) and extended X-ray absorption fine structure…”
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    Journal Article
  10. 10

    Nanocrystalline Ga1-xMnxN films grown by reactive sputtering by LEITE, D. M. G, DA SILVA, L. F, PEREIRA, A. L. J, DIAS DA SILVA, J. H

    Published in Journal of crystal growth (04-09-2006)
    “…The growth of nanocrystalline Ga1-xMnxN (0.00x0.18) films grown by reactive RF-magnetron sputtering is focused here for the first time. The films were grown in…”
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    Journal Article
  11. 11

    Stoichiometry unbalance and photoluminescence emission in Ga 1− XAs X films prepared by flash evaporation by Dias da Silva, J.H., Leite, D.M.G., Martins, M.R.

    Published in Journal of non-crystalline solids (2004)
    “…Both narrow and broad photoluminescence bands were observed in Ga 1− X As X films prepared by flash evaporation of polycrystalline GaAs containing native C…”
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    Journal Article
  12. 12
  13. 13

    Stoichiometry unbalance and photoluminescence emission in Ga1−XAsX films prepared by flash evaporation by Dias da Silva, J.H., Leite, D.M.G., Martins, M.R.

    Published in Journal of non-crystalline solids (15-06-2004)
    “…Both narrow and broad photoluminescence bands were observed in Ga1-XAsX films prepared by flash evaporation of polycrystalline GaAs containing native C…”
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    Journal Article
  14. 14

    Urbach energy parameter of flash evaporated amorphous gallium arsenide films by Dias da Silva, J.H, Campomanes, R.R

    Published in Journal of non-crystalline solids (01-04-2002)
    “…The dependence of the optical absorption edge on the deposition crucible temperature is used to investigate the electronic states in As-rich a-GaAs flash…”
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    Journal Article
  15. 15

    Low temperature annealing of amorphous gallium arsenide films by Campomanes, R.R., Ugucione, J., Dias da Silva, J.H.

    Published in Journal of non-crystalline solids (01-06-2002)
    “…This work reports the changes in the optical properties produced by annealing of amorphous GaAs at temperatures smaller than or just sufficient to produce…”
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    Journal Article Conference Proceeding
  16. 16

    Defect structure in nitrogen-rich amorphous silicon nitride films by Yan, Baojie, Dias da Silva, J.H, Taylor, P.C

    Published in Journal of non-crystalline solids (01-05-1998)
    “…Electron spin resonance and photoluminescence measurements were carried out on nitrogen-rich, hydrogenated amorphous silicon-nitride films. Paramagnetic Si…”
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    Journal Article