Search Results - "Di, Z.F."

Helium bubble precipitation at dislocation networks by Hetherly, J., Martinez, E., Di, Z.F., Nastasi, M., Caro, A.

“…We report on a study of nanoscale He bubble precipitation and growth at a twist grain boundary in two face-centered cubic materials. Experimentally, the twist…”
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Study of Ge loss during Ge condensation process by Xue, Z.Y., Di, Z.F., Ye, L., Mu, Z.Q., Chen, D., Wei, X., Zhang, M., Wang, X.

“…Ge loss during Ge condensation process was investigated by transmission electron microscopy, Raman spectroscopy, secondary ion mass spectrometry and Rutherford…”
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Order and temperature dependence of surface blistering in H and He co-implanted Ge by Dai, J.Y., Wei, X., Xue, Z.Y., Di, Z.F., Zhang, M.

“…The effect of implantation order and post-annealing temperature on surface blistering of H and He co-implanted germanium was investigated in the samples…”
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Influence of He implantation dose on strain relaxation of pseudomorphic SiGe/Si heterostructure by Liu, L.J., Xue, Z.Y., Chen, D., Mu, Z.Q., Bian, J.T., Jiang, H.T., Wei, X., Di, Z.F., Zhang, M., Wang, X.

“…The influence of He implantation dose on the strain relaxation of 180nm Si0.75Ge0.25/Si layers epitaxially grown on silicon is investigated. It is found that…”
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Aging control of organic thin film transistors via ion-implantation by Fraboni, B., Cosseddu, P., Wang, Y.Q., Schulze, R.K., Di, Z.F., Cavallini, A., Nastasi, M., Bonfiglio, A.

“…[Display omitted] ► Organic thin film devices exposed to atmosphere suffer severe degradation effects. ► Controlled ion implantation induces strong…”
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Improvement of interfacial and microstructure properties of high- k ZrO 2 thin films fabricated by filtered cathodic arc deposition using nitrogen incorporation by Huang, A.P., Di, Z.F., Fu, Ricky K.Y., Chu, Paul K.

“…We investigate the microstructure and interfacial characteristics of nitrogen plasma-nitrided ZrO 2 thin films deposited on p-type Si (100) wafers by cathodic…”
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The Insulator to Superconductor Transition in Ga-Doped Semiconductor Ge Single Crystal Induced by the Annealing Temperature by Xie, Xiaoming, Hu, T., Di, Z. F., Sun, Y. B.

“…We have fabricated the heavily Ga-doped layer in Ge single crystal by the implantation and rapid thermal annealing method. The samples show a crossover from…”
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Microstructure and visible-photoluminescence of titanium dioxide thin films fabricated by dual cathodic arc and nitrogen plasma deposition by Huang, A.P., Di, Z.F., Chu, Paul K.

“…We report the concurrent use of plasma nitridation with cathodic arc deposition to fabricate N-doped TiO 2 thin films on Si (100) wafers. The microstructures…”
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Improvement of interfacial and microstructure properties of high-k ZrO2 thin films fabricated by filtered cathodic arc deposition using nitrogen incorporation by HUANG, A. P, DI, Z. F, FU, Ricky K. Y, CHU, Paul K

“…We investigate the microstructure and interfacial characteristics of nitrogen plasma-nitrided ZrO2 thin films deposited on p-type Si (100) wafers by cathodic…”
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