Search Results - "Dheeraj L"
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Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography
Published in Nano letters (12-02-2014)“…We report on the epitaxial growth of large-area position-controlled self-catalyzed GaAs nanowires (NWs) directly on Si by molecular beam epitaxy (MBE)…”
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2
Vertically Aligned GaAs Nanowires on Graphite and Few-Layer Graphene: Generic Model and Epitaxial Growth
Published in Nano letters (12-09-2012)“…By utilizing the reduced contact area of nanowires, we show that epitaxial growth of a broad range of semiconductors on graphene can in principle be achieved…”
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Rectifying Single GaAsSb Nanowire Devices Based on Self-Induced Compositional Gradients
Published in Nano letters (10-06-2015)“…Device configurations that enable a unidirectional propagation of carriers in a semiconductor are fundamental components for electronic and optoelectronic…”
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4
Fluorescence-based Evaluation of the Efficacy of Augmented Reality-assisted Toothbrush on Oral Hygiene Practices Among 6–8 Years Old Children
Published in Journal of advanced oral research (01-11-2023)“…Aim: Effective toothbrushing is the most simple way to maintain a child’s oral hygiene for a cavity-free mouth. Yet, most children find it an uninteresting…”
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5
Crystal phase engineering in self-catalyzed GaAs and GaAs/GaAsSb nanowires grown on Si(111)
Published in Journal of crystal growth (01-06-2013)“…Accomplishing control of the crystal phases in III–V semiconductor nanowires (NWs) is important for applications in future advanced nano-devices. In this work,…”
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6
Observation of free exciton photoluminescence emission from single wurtzite GaAs nanowires
Published in Applied physics letters (30-03-2009)“…Microphotoluminescence measurements are used to investigate the optical properties of single wurtzite GaAs nanowires grown by molecular beam epitaxy. The…”
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7
Effect of arsenic species on the kinetics of GaAs nanowires growth by molecular beam epitaxy
Published in Journal of crystal growth (01-07-2010)“…GaAs nanowires (NWs) are grown on GaAs (1 1 1) B substrates in a molecular beam epitaxy system, by Au-assisted vapor–liquid–solid growth. We compare the…”
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8
Osler-Weber-Rendu disease: A rare cause of recurrent hemoptysis
Published in Lung India (01-05-2016)“…Osler-Weber-Rendu disease, also known as hereditary hemorrhagic telangiectasia, is a rare autosomal dominant condition causing systemic fibrovascular…”
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9
Comparison of Be-doped GaAs nanowires grown by Au- and Ga-assisted molecular beam epitaxy
Published in Journal of crystal growth (01-09-2013)“…We report on the growth, structural and electrical characterizations of Be-doped GaAs nanowires (NWs) grown by the Au- and Ga-assisted vapour–liquid–solid…”
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Journal Article Conference Proceeding -
10
Growth and structural characterization of GaAs/GaAsSb axial heterostructured nanowires
Published in Journal of crystal growth (15-03-2009)“…GaAs nanowire (NW) heterostructures with four GaAsSb inserts were grown on GaAs(1 1 1)B substrates by Au-assisted molecular beam epitaxy (MBE). Structural…”
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Journal Article Conference Proceeding -
11
In situ electronic probing of semiconducting nanowires in an electron microscope
Published in Journal of microscopy (Oxford) (01-05-2016)“…Summary For the development of electronic nanoscale structures, feedback on its electronic properties is crucial, but challenging. Here, we present a…”
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12
Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress
Published in Nature communications (10-04-2014)“…Many efficient light-emitting devices and photodetectors are based on semiconductors with, respectively, a direct or indirect bandgap configuration. The less…”
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13
A Story Told by a Single Nanowire: Optical Properties of Wurtzite GaAs
Published in Nano letters (12-12-2012)“…The optical properties of the wurtzite (WZ) GaAs crystal phase found in nanowires (NWs) are a highly controversial topic. Here, we study high-quality pure WZ…”
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14
New Insights into the Origins of Sb-Induced Effects on Self-Catalyzed GaAsSb Nanowire Arrays
Published in Nano letters (10-02-2016)“…Ternary semiconductor nanowire arrays enable scalable fabrication of nano-optoelectronic devices with tunable bandgap. However, the lack of insight into the…”
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15
Influence of pitch on the morphology and luminescence properties of self-catalyzed GaAsSb nanowire arrays
Published in Applied physics letters (12-12-2016)“…We report on the influence of hole pattern pitch lengths in the silicon oxide mask and specific nanowire (NW) locations on the morphology and luminescence…”
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16
In Situ Heat-Induced Replacement of GaAs Nanowires by Au
Published in Nano letters (11-05-2016)“…Here we report on the heat-induced solid-state replacement of GaAs by Au in nanowires. Such replacement of semiconductor nanowires by metals is envisioned as a…”
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Single GaAs Nanowire/Graphene Hybrid Devices Fabricated by a Position-Controlled Microtransfer and an Imprinting Technique for an Embedded Structure
Published in ACS applied materials & interfaces (10-04-2019)“…We developed a new technique to fabricate single nanowire devices with reliable graphene/nanowire contacts using a position-controlled microtransfer and an…”
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18
Growth and Characterization of Wurtzite GaAs Nanowires with Defect-Free Zinc Blende GaAsSb Inserts
Published in Nano letters (01-12-2008)“…We have demonstrated the growth of a unique wurtzite (WZ) GaAs nanowire (NW) with a zinc blende (ZB) GaAsSb insert by Au-assisted molecular beam epitaxy. An…”
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19
Semiconductor quantum-wires and nano-wires for optoelectronic applications
Published in Journal of materials science. Materials in electronics (2009)“…Exciton transfer between two parallel GaAs V-groove quantum wires (QWRs) or two planar quantum wells (QWs) separated by AlGaAs barriers ranging from 5.5 nm to…”
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Journal Article Conference Proceeding -
20
Engineering Parallel and Perpendicular Polarized Photoluminescence from a Single Semiconductor Nanowire by Crystal Phase Control
Published in Nano letters (11-08-2010)“…We report on a crystal phase-dependent photoluminescence (PL) polarization effect in individual wurtzite GaAs nanowires with a zinc blende GaAsSb insert grown…”
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