Search Results - "Dheeraj L"

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  1. 1

    Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography by Munshi, A. M, Dheeraj, D. L, Fauske, V. T, Kim, D. C, Huh, J, Reinertsen, J. F, Ahtapodov, L, Lee, K. D, Heidari, B, van Helvoort, A. T. J, Fimland, B. O, Weman, H

    Published in Nano letters (12-02-2014)
    “…We report on the epitaxial growth of large-area position-controlled self-catalyzed GaAs nanowires (NWs) directly on Si by molecular beam epitaxy (MBE)…”
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    Journal Article
  2. 2

    Vertically Aligned GaAs Nanowires on Graphite and Few-Layer Graphene: Generic Model and Epitaxial Growth by Munshi, A. Mazid, Dheeraj, Dasa L, Fauske, Vidar T, Kim, Dong-Chul, van Helvoort, Antonius T. J, Fimland, Bjørn-Ove, Weman, Helge

    Published in Nano letters (12-09-2012)
    “…By utilizing the reduced contact area of nanowires, we show that epitaxial growth of a broad range of semiconductors on graphene can in principle be achieved…”
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    Journal Article
  3. 3

    Rectifying Single GaAsSb Nanowire Devices Based on Self-Induced Compositional Gradients by Huh, Junghwan, Yun, Hoyeol, Kim, Dong-Chul, Munshi, A. Mazid, Dheeraj, Dasa L, Kauko, Hanne, van Helvoort, Antonius T. J, Lee, SangWook, Fimland, Bjørn-Ove, Weman, Helge

    Published in Nano letters (10-06-2015)
    “…Device configurations that enable a unidirectional propagation of carriers in a semiconductor are fundamental components for electronic and optoelectronic…”
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    Journal Article
  4. 4

    Fluorescence-based Evaluation of the Efficacy of Augmented Reality-assisted Toothbrush on Oral Hygiene Practices Among 6–8 Years Old Children by Dey, S, Deshmukh, S, Umamaheshwari S, Dheeraj L, Sinchan HG

    Published in Journal of advanced oral research (01-11-2023)
    “…Aim: Effective toothbrushing is the most simple way to maintain a child’s oral hygiene for a cavity-free mouth. Yet, most children find it an uninteresting…”
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    Journal Article
  5. 5

    Crystal phase engineering in self-catalyzed GaAs and GaAs/GaAsSb nanowires grown on Si(111) by Munshi, Abdul Mazid, Dheeraj, Dasa L., Todorovic, Jelena, van Helvoort, Antonius T.J., Weman, Helge, Fimland, Bjørn-Ove

    Published in Journal of crystal growth (01-06-2013)
    “…Accomplishing control of the crystal phases in III–V semiconductor nanowires (NWs) is important for applications in future advanced nano-devices. In this work,…”
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    Journal Article
  6. 6

    Observation of free exciton photoluminescence emission from single wurtzite GaAs nanowires by Hoang, Thang B., Moses, A. F., Zhou, H. L., Dheeraj, D. L., Fimland, B. O., Weman, H.

    Published in Applied physics letters (30-03-2009)
    “…Microphotoluminescence measurements are used to investigate the optical properties of single wurtzite GaAs nanowires grown by molecular beam epitaxy. The…”
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    Journal Article
  7. 7

    Effect of arsenic species on the kinetics of GaAs nanowires growth by molecular beam epitaxy by Sartel, C., Dheeraj, D.L., Jabeen, F., Harmand, J.C.

    Published in Journal of crystal growth (01-07-2010)
    “…GaAs nanowires (NWs) are grown on GaAs (1 1 1) B substrates in a molecular beam epitaxy system, by Au-assisted vapor–liquid–solid growth. We compare the…”
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    Journal Article
  8. 8

    Osler-Weber-Rendu disease: A rare cause of recurrent hemoptysis by Khoja, Amir, Jalan, Rahul, Jain, Dheeraj, Kajale, Omkar

    Published in Lung India (01-05-2016)
    “…Osler-Weber-Rendu disease, also known as hereditary hemorrhagic telangiectasia, is a rare autosomal dominant condition causing systemic fibrovascular…”
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    Journal Article
  9. 9

    Comparison of Be-doped GaAs nanowires grown by Au- and Ga-assisted molecular beam epitaxy by Dheeraj, D.L., Munshi, A.M., Christoffersen, O.M., Kim, D.C., Signorello, G., Riel, H., van Helvoort, A.T.J., Weman, H., Fimland, B.O.

    Published in Journal of crystal growth (01-09-2013)
    “…We report on the growth, structural and electrical characterizations of Be-doped GaAs nanowires (NWs) grown by the Au- and Ga-assisted vapour–liquid–solid…”
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    Journal Article Conference Proceeding
  10. 10

    Growth and structural characterization of GaAs/GaAsSb axial heterostructured nanowires by Dheeraj, D.L., Patriarche, G., Zhou, H., Harmand, J.C., Weman, H., Fimland, B.O.

    Published in Journal of crystal growth (15-03-2009)
    “…GaAs nanowire (NW) heterostructures with four GaAsSb inserts were grown on GaAs(1 1 1)B substrates by Au-assisted molecular beam epitaxy (MBE). Structural…”
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    Journal Article Conference Proceeding
  11. 11

    In situ electronic probing of semiconducting nanowires in an electron microscope by FAUSKE, V.T., ERLBECK, M.B., HUH, J., KIM, D.C., MUNSHI, A.M., DHEERAJ, D.L., WEMAN, H., FIMLAND, B.O., VAN HELVOORT, A.T.J.

    Published in Journal of microscopy (Oxford) (01-05-2016)
    “…Summary For the development of electronic nanoscale structures, feedback on its electronic properties is crucial, but challenging. Here, we present a…”
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    Journal Article
  12. 12

    Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress by Signorello, G., Lörtscher, E., Khomyakov, P.A., Karg, S., Dheeraj, D.L., Gotsmann, B., Weman, H., Riel, H.

    Published in Nature communications (10-04-2014)
    “…Many efficient light-emitting devices and photodetectors are based on semiconductors with, respectively, a direct or indirect bandgap configuration. The less…”
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    Journal Article
  13. 13

    A Story Told by a Single Nanowire: Optical Properties of Wurtzite GaAs by Ahtapodov, Lyubomir, Todorovic, Jelena, Olk, Phillip, Mjåland, Terje, Slåttnes, Patrick, Dheeraj, Dasa L, van Helvoort, Antonius T. J, Fimland, Bjørn-Ove, Weman, Helge

    Published in Nano letters (12-12-2012)
    “…The optical properties of the wurtzite (WZ) GaAs crystal phase found in nanowires (NWs) are a highly controversial topic. Here, we study high-quality pure WZ…”
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    Journal Article
  14. 14

    New Insights into the Origins of Sb-Induced Effects on Self-Catalyzed GaAsSb Nanowire Arrays by Ren, Dingding, Dheeraj, Dasa L, Jin, Chengjun, Nilsen, Julie S, Huh, Junghwan, Reinertsen, Johannes F, Munshi, A. Mazid, Gustafsson, Anders, van Helvoort, Antonius T. J, Weman, Helge, Fimland, Bjørn-Ove

    Published in Nano letters (10-02-2016)
    “…Ternary semiconductor nanowire arrays enable scalable fabrication of nano-optoelectronic devices with tunable bandgap. However, the lack of insight into the…”
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    Journal Article
  15. 15

    Influence of pitch on the morphology and luminescence properties of self-catalyzed GaAsSb nanowire arrays by Ren, Dingding, Huh, Junghwan, Dheeraj, Dasa L., Weman, Helge, Fimland, Bjørn-Ove

    Published in Applied physics letters (12-12-2016)
    “…We report on the influence of hole pattern pitch lengths in the silicon oxide mask and specific nanowire (NW) locations on the morphology and luminescence…”
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    Journal Article
  16. 16

    In Situ Heat-Induced Replacement of GaAs Nanowires by Au by Fauske, Vidar T, Huh, Junghwan, Divitini, Giorgio, Dheeraj, Dasa L, Munshi, A. Mazid, Ducati, Caterina, Weman, Helge, Fimland, Bjørn-Ove, van Helvoort, Antonius T. J

    Published in Nano letters (11-05-2016)
    “…Here we report on the heat-induced solid-state replacement of GaAs by Au in nanowires. Such replacement of semiconductor nanowires by metals is envisioned as a…”
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    Journal Article
  17. 17
  18. 18

    Growth and Characterization of Wurtzite GaAs Nanowires with Defect-Free Zinc Blende GaAsSb Inserts by Dheeraj, Dasa L, Patriarche, Gilles, Zhou, Hailong, Hoang, Thang B, Moses, Anthonysamy F, Grønsberg, Sondre, van Helvoort, Antonius T. J, Fimland, Bjørn-Ove, Weman, Helge

    Published in Nano letters (01-12-2008)
    “…We have demonstrated the growth of a unique wurtzite (WZ) GaAs nanowire (NW) with a zinc blende (ZB) GaAsSb insert by Au-assisted molecular beam epitaxy. An…”
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    Journal Article
  19. 19

    Semiconductor quantum-wires and nano-wires for optoelectronic applications by Weman, H., Palmgren, S., Karlsson, K. F., Rudra, A., Kapon, E., Dheeraj, D. L., Fimland, B. O., Harmand, J. C.

    “…Exciton transfer between two parallel GaAs V-groove quantum wires (QWRs) or two planar quantum wells (QWs) separated by AlGaAs barriers ranging from 5.5 nm to…”
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    Journal Article Conference Proceeding
  20. 20

    Engineering Parallel and Perpendicular Polarized Photoluminescence from a Single Semiconductor Nanowire by Crystal Phase Control by Ba Hoang, Thang, Moses, Anthonysamy F, Ahtapodov, Lyubomir, Zhou, Hailong, Dheeraj, Dasa L, van Helvoort, Antonius T. J, Fimland, Bjørn-Ove, Weman, Helge

    Published in Nano letters (11-08-2010)
    “…We report on a crystal phase-dependent photoluminescence (PL) polarization effect in individual wurtzite GaAs nanowires with a zinc blende GaAsSb insert grown…”
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    Journal Article