Search Results - "Dhar, Nibir"
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Graphene-Based Field-Effect Photodetector with HgCdTe Absorber
Published in Journal of electronic materials (01-10-2024)“…A field-effect photodetector structure composed of an Al 2 O 3 -encapsulated bilayer graphene conductive channel attached to an Al 2 O 3 dielectric layer…”
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2
Resonant InGaAs Detectors and Emitters for Passive and Active Imaging Application
Published in IEEE journal of quantum electronics (01-02-2023)“…In this work, we design an InGaAs avalanche photodiode (APD) with a higher photocurrent to dark current ratio than a conventional APD. The improvement is based…”
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3
High Performance Infrared Photodetectors and Energy Harvesting Devices Based on Micro-Scaled Photonics Structures
Published in IEEE journal of quantum electronics (01-08-2021)“…For mid-wave infrared detectors, we designed a meta-surface to enhance quantum efficiency (QE) across 2 to 6 microns. The relative enhancement depends on the…”
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4
A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and Opportunities
Published in IEEE journal of selected topics in quantum electronics (01-07-2011)“…One-dimensional semiconductor nanostructures (nanowires (NWs), nanotubes, nanopillars, nanorods, etc.) based photodetectors (PDs) have been gaining traction in…”
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5
Uniform and Reliable GaN p-i-n Ultraviolet Avalanche Photodiode Arrays
Published in IEEE photonics technology letters (01-10-2016)“…GaN p-i-n ultraviolet avalanche photodiodes (UV-APDs) were fabricated from epitaxial structures grown on low-dislocation-density free-standing GaN substrates…”
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6
Using Skeleton Correction to Improve Flash Lidar-based Gait Recognition
Published in Applied artificial intelligence (31-12-2022)“…This paper presents GlidarPoly, an efficacious pipeline of 3D gait recognition for flash lidar data based on pose estimation and robust correction of erroneous…”
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Electrical Properties of Degenerate Boron Doped Graphene
Published in SoutheastCon 2023 (01-04-2023)“…P-type doping is essential for tuning the electron transport characteristics of graphene for variety of applications in electronics. We demonstrate stable…”
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Conference Proceeding -
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Carbon nanotube microbolometers on suspended silicon nitride via vertical fabrication procedure
Published in Applied physics letters (19-05-2014)“…We report on carbon nanotube membrane microbolometers, operating uncooled in the near-infrared (IR) and mid-IR band, with speed of 10 ms and responsivity of…”
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Development and fabrication of extended short wavelength infrared HgCdTe sensors grown on CdTe/Si substrates by molecular beam epitaxy
Published in Solid-state electronics (01-11-2014)“…•Short-wavelength infrared HgCdTe devices grown on CdTe/Si substrates have been demonstrated.•Data suggests diffusion current dominates near zero bias for…”
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Journal Article Conference Proceeding -
10
Atomically thin layers of B-N-C-O with tunable composition
Published in Science advances (01-07-2015)“…In recent times, atomically thin alloys of boron, nitrogen, and carbon have generated significant excitement as a composition-tunable two-dimensional (2D)…”
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11
Glidar3DJ: a View-Invariant Gait Identification via Flash Lidar Data Correction
Published in 2019 IEEE International Conference on Image Processing (ICIP) (01-09-2019)“…Gait recognition is a leading remote-based identification method, suitable for real-world surveillance and medical applications. Model-based gait recognition…”
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Conference Proceeding -
12
Simulation of Indirect-Direct transformation phenomenon of germanium under uniaxial and biaxial strain along arbitrary orientations
Published in 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01-09-2015)“…Germanium can be transformed from an indirect bandgap material to a direct bandgap material by applying strain. Unstrained Ge has an indirect bandgap of 0.66eV…”
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Conference Proceeding Journal Article -
13
Hg based II-VI compounds on non-standard substrates
Published in Physica status solidi. A, Applications and materials science (01-08-2012)“…The Army Research Laboratory (ARL) is pursuing scalable infrared (IR) material technologies to meet the growing need for large format arrays. A two pronged…”
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High-Performance Long-Wavelength Infrared HgCdTe Focal Plane Arrays Fabricated on CdSeTe Compliant Si Substrates
Published in IEEE transactions on electron devices (01-04-2010)“…At the U.S. Army Research Laboratory, a new ternary semiconductor system CdSe x Te 1-x ,/Si(211) is being investigated as an alternative substrate to…”
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15
Using density functional theory to engineer direct gap germanium-tin alloy
Published in 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01-09-2015)“…Germanium is a group IV semiconductor commonly used in Short Wave Infrared (SWIR) optical devices due to its relatively small band gap of 0.66eV. Like silicon…”
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Conference Proceeding Journal Article -
16
Simulation of Indirect-Direct transformation phenomenon of germanium under uniaxial and biaxial strain along arbitrary orientations
Published in 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01-09-2015)“…Germanium can be transformed from an indirect bandgap material to a direct bandgap material by applying strain. Unstrained Ge has an indirect bandgap of 0.66eV…”
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Conference Proceeding Journal Article -
17
P-doped bilayer graphene based photodetector with colloidal quantum dots absorber
Published in 2023 IEEE Photonics Conference (IPC) (12-11-2023)“…Photodetector based on chemical free p-type doped graphene conduction channel and core-shell CdSe/ZnS type I quantum dots absorber was studied. Chanel…”
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Conference Proceeding -
18
Graphene Based Field Effect Transistor with Chemical Free p-Type Channel Doping
Published in 2023 IEEE Research and Applications of Photonics in Defense Conference (RAPID) (01-09-2023)“…This paper reports transport properties for \text{Al}_2 \mathbf{O}_3 and \text{SiO}_{2} encapsulated graphene bilayer with strain defined sheet carrier density…”
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Conference Proceeding -
19
Nonequilibrium Operation of Arsenic Diffused Long-Wavelength Infrared HgCdTe Photodiodes
Published in Journal of electronic materials (01-09-2008)“…We demonstrated a device with a unique planar architecture using a novel approach for obtaining low arsenic doping concentrations in long-wavelength (LW)…”
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20
Dissipative Quantum Transport Study of A Bi-Layer Graphene-CdTe-HgCdTe Heterostructure for MWIR Photodetector
Published in 2021 IEEE Research and Applications of Photonics in Defense Conference (RAPID) (01-08-2021)“…Recent experimental investigations in Bi-Layer Graphene (BLG) have shown interesting and useful electrical behavior that can be leveraged in building novel…”
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Conference Proceeding