Search Results - "Dhar, Nibir"

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  1. 1

    Graphene-Based Field-Effect Photodetector with HgCdTe Absorber by Sheremet, Volodymyr, Rabbe, Md Fazle, Jacobs, Randy N., Avrutin, Vitaliy, Ӧzgür, Ümit, Dhar, Nibir K.

    Published in Journal of electronic materials (01-10-2024)
    “…A field-effect photodetector structure composed of an Al 2 O 3 -encapsulated bilayer graphene conductive channel attached to an Al 2 O 3 dielectric layer…”
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    Journal Article
  2. 2

    Resonant InGaAs Detectors and Emitters for Passive and Active Imaging Application by Choi, Kwong-Kit, Oduor, Patrick, Dhar, Nibir K., Dutta, Achyut K.

    Published in IEEE journal of quantum electronics (01-02-2023)
    “…In this work, we design an InGaAs avalanche photodiode (APD) with a higher photocurrent to dark current ratio than a conventional APD. The improvement is based…”
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    Journal Article
  3. 3

    High Performance Infrared Photodetectors and Energy Harvesting Devices Based on Micro-Scaled Photonics Structures by Choi, Kwong-Kit, Dutta, Achyut K., Dhar, Nibir K.

    Published in IEEE journal of quantum electronics (01-08-2021)
    “…For mid-wave infrared detectors, we designed a meta-surface to enhance quantum efficiency (QE) across 2 to 6 microns. The relative enhancement depends on the…”
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    Journal Article
  4. 4

    A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and Opportunities by VJ, Logeeswaran, Oh, Jinyong, Nayak, Avinash P., Katzenmeyer, Aaron M., Gilchrist, Kristin H., Grego, Sonia, Kobayashi, Nobuhiko P., Wang, Shih-Yuan, Talin, A. Alec, Dhar, Nibir K., Islam, M. Saif

    “…One-dimensional semiconductor nanostructures (nanowires (NWs), nanotubes, nanopillars, nanorods, etc.) based photodetectors (PDs) have been gaining traction in…”
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    Journal Article
  5. 5

    Uniform and Reliable GaN p-i-n Ultraviolet Avalanche Photodiode Arrays by Mi-Hee Ji, Jeomoh Kim, Detchprohm, Theeradetch, Dupuis, Russell D., Sood, Ashok K., Dhar, Nibir K., Lewis, Jay

    Published in IEEE photonics technology letters (01-10-2016)
    “…GaN p-i-n ultraviolet avalanche photodiodes (UV-APDs) were fabricated from epitaxial structures grown on low-dislocation-density free-standing GaN substrates…”
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    Journal Article
  6. 6

    Using Skeleton Correction to Improve Flash Lidar-based Gait Recognition by Sadeghzadehyazdi, Nasrin, Batabyal, Tamal, Glandon, Alexander, Dhar, Nibir, Familoni, Babajide, Iftekharuddin, Khan, Acton, Scott T.

    Published in Applied artificial intelligence (31-12-2022)
    “…This paper presents GlidarPoly, an efficacious pipeline of 3D gait recognition for flash lidar data based on pose estimation and robust correction of erroneous…”
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    Journal Article
  7. 7

    Electrical Properties of Degenerate Boron Doped Graphene by Rabbe, Md Fazle, Sheremet, Volodymyr, Ganguly, Samiran, Sood, Ashok K., Zeller, John W., Chaudhary, Latika S., Avrutin, Vitaliy, Ozgur, Umit, Dhar, Nibir K.

    Published in SoutheastCon 2023 (01-04-2023)
    “…P-type doping is essential for tuning the electron transport characteristics of graphene for variety of applications in electronics. We demonstrate stable…”
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    Conference Proceeding
  8. 8

    Carbon nanotube microbolometers on suspended silicon nitride via vertical fabrication procedure by Fernandes, Gustavo E., Ho Kim, Jin, Chin, Matthew, Dhar, Nibir, Xu, Jimmy

    Published in Applied physics letters (19-05-2014)
    “…We report on carbon nanotube membrane microbolometers, operating uncooled in the near-infrared (IR) and mid-IR band, with speed of 10 ms and responsivity of…”
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    Journal Article
  9. 9

    Development and fabrication of extended short wavelength infrared HgCdTe sensors grown on CdTe/Si substrates by molecular beam epitaxy by Simingalam, Sina, VanMil, Brenda L., Chen, Yuanping, DeCuir, Eric A., Meissner, Greg P., Wijewarnasuriya, Priyalal, Dhar, Nibir K., Rao, Mulpuri V.

    Published in Solid-state electronics (01-11-2014)
    “…•Short-wavelength infrared HgCdTe devices grown on CdTe/Si substrates have been demonstrated.•Data suggests diffusion current dominates near zero bias for…”
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    Journal Article Conference Proceeding
  10. 10

    Atomically thin layers of B-N-C-O with tunable composition by Ozturk, Birol, de-Luna-Bugallo, Andres, Panaitescu, Eugen, Chiaramonti, Ann N, Liu, Fangze, Vargas, Anthony, Jiang, Xueping, Kharche, Neerav, Yavuzcetin, Ozgur, Alnaji, Majed, Ford, Matthew J, Lok, Jay, Zhao, Yongyi, King, Nicholas, Dhar, Nibir K, Dubey, Madan, Nayak, Saroj K, Sridhar, Srinivas, Kar, Swastik

    Published in Science advances (01-07-2015)
    “…In recent times, atomically thin alloys of boron, nitrogen, and carbon have generated significant excitement as a composition-tunable two-dimensional (2D)…”
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    Journal Article
  11. 11

    Glidar3DJ: a View-Invariant Gait Identification via Flash Lidar Data Correction by Sadeghzadehyazdi, Nasrin, Batabyal, Tamal, Glandon, A., Dhar, Nibir K., Familoni, B. O., Iftekharuddin, K. M., Acton, Scott T.

    “…Gait recognition is a leading remote-based identification method, suitable for real-world surveillance and medical applications. Model-based gait recognition…”
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    Conference Proceeding
  12. 12

    Simulation of Indirect-Direct transformation phenomenon of germanium under uniaxial and biaxial strain along arbitrary orientations by Xiao, Ziyang, Goldsman, Neil, Dhar, Nibir K.

    “…Germanium can be transformed from an indirect bandgap material to a direct bandgap material by applying strain. Unstrained Ge has an indirect bandgap of 0.66eV…”
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    Conference Proceeding Journal Article
  13. 13

    Hg based II-VI compounds on non-standard substrates by Brill, Gregory N., Chen, Yuanping, Wijewarnasuriya, Priyalal S., Dhar, Nibir K.

    “…The Army Research Laboratory (ARL) is pursuing scalable infrared (IR) material technologies to meet the growing need for large format arrays. A two pronged…”
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    Journal Article
  14. 14

    High-Performance Long-Wavelength Infrared HgCdTe Focal Plane Arrays Fabricated on CdSeTe Compliant Si Substrates by Wijewarnasuriya, P.S., Yuanping Chen, Brill, G., Zandi, B., Dhar, N.K.

    Published in IEEE transactions on electron devices (01-04-2010)
    “…At the U.S. Army Research Laboratory, a new ternary semiconductor system CdSe x Te 1-x ,/Si(211) is being investigated as an alternative substrate to…”
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    Journal Article
  15. 15

    Using density functional theory to engineer direct gap germanium-tin alloy by Darmody, Chris, Ettisserry, D. P., Goldsman, Neil, Dhar, Nibir K.

    “…Germanium is a group IV semiconductor commonly used in Short Wave Infrared (SWIR) optical devices due to its relatively small band gap of 0.66eV. Like silicon…”
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    Conference Proceeding Journal Article
  16. 16

    Simulation of Indirect-Direct transformation phenomenon of germanium under uniaxial and biaxial strain along arbitrary orientations by Ziyang Xiao, Goldsman, Neil, Dhar, Nibir K.

    “…Germanium can be transformed from an indirect bandgap material to a direct bandgap material by applying strain. Unstrained Ge has an indirect bandgap of 0.66eV…”
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    Conference Proceeding Journal Article
  17. 17

    P-doped bilayer graphene based photodetector with colloidal quantum dots absorber by Rabbe, Md Fazle, Sheremet, Volodymyr, Pate, David, Avrutin, Vitaliy, Ozgur, Umit, Dhar, Nibir K.

    Published in 2023 IEEE Photonics Conference (IPC) (12-11-2023)
    “…Photodetector based on chemical free p-type doped graphene conduction channel and core-shell CdSe/ZnS type I quantum dots absorber was studied. Chanel…”
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    Conference Proceeding
  18. 18

    Graphene Based Field Effect Transistor with Chemical Free p-Type Channel Doping by Sheremet, Volodymyr, Rabbe, Md Fazle, Avrutin, Vitaliy, Ozgur, Umit, Dhar, Nibir K.

    “…This paper reports transport properties for \text{Al}_2 \mathbf{O}_3 and \text{SiO}_{2} encapsulated graphene bilayer with strain defined sheet carrier density…”
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    Conference Proceeding
  19. 19

    Nonequilibrium Operation of Arsenic Diffused Long-Wavelength Infrared HgCdTe Photodiodes by Wijewarnasuriya, Priyalal S., Emelie, P.Y., D’Souza, Arvind, Brill, Gregory, Stapelbroek, Maryn G., Velicu, Silviu, Chen, Yuanping, Grein, Chris, Sivananthan, Sivalingam, Dhar, Nibir K.

    Published in Journal of electronic materials (01-09-2008)
    “…We demonstrated a device with a unique planar architecture using a novel approach for obtaining low arsenic doping concentrations in long-wavelength (LW)…”
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    Journal Article Conference Proceeding
  20. 20

    Dissipative Quantum Transport Study of A Bi-Layer Graphene-CdTe-HgCdTe Heterostructure for MWIR Photodetector by Ganguly, Samiran, Tonni, Farjana F., Ahmed, Sheikh Z., Ghuman, Parminder, Babu, Sachidananda, Dhar, Nibir K., Sood, Ashok K., Ghosh, Avik W.

    “…Recent experimental investigations in Bi-Layer Graphene (BLG) have shown interesting and useful electrical behavior that can be leveraged in building novel…”
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    Conference Proceeding