Search Results - "Dhar, N.K."
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High-Performance Long-Wavelength Infrared HgCdTe Focal Plane Arrays Fabricated on CdSeTe Compliant Si Substrates
Published in IEEE transactions on electron devices (01-04-2010)“…At the U.S. Army Research Laboratory, a new ternary semiconductor system CdSe x Te 1-x ,/Si(211) is being investigated as an alternative substrate to…”
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Modeling of LWIR HgCdTe Auger-Suppressed Infrared Photodiodes under Nonequilibrium Operation
Published in Journal of electronic materials (01-09-2008)“…The general approach and effects of nonequilibrium operation of Auger-suppressed HgCdTe infrared photodiodes are well understood. However, the complex…”
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Status of LWIR HgCdTe-on-Silicon FPA Technology
Published in Journal of electronic materials (01-09-2008)“…The use of silicon as an alternative substrate to bulk CdZnTe for epitaxial growth of HgCdTe for infrared detector applications is attractive because of…”
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MBE growth of CdSeTe/Si composite substrate for long-wavelength IR HgCdTe applications
Published in Journal of crystal growth (01-05-2003)“…For the first time, the ternary alloy CdSe x Te 1− x (2 1 1) has been grown on Si(2 1 1) substrates using molecular beam epitaxy. The growth of CdSeTe was…”
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Role of dislocation scattering on the electron mobility of n-type long wave length infrared HgCdTe on silicon
Published in Journal of electronic materials (01-08-2007)“…It has been reported that the basic electrical properties of n-type long wave length infrared (LWIR) HgCdTe grown on silicon, including the majority carrier…”
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Heteroepitaxy of CdTe on {211}Si substrates by molecular beam epitaxy
Published in Journal of crystal growth (01-02-1996)“…Direct growth of (211)CdTe on Si has been achieved by molecular beam epitaxy. We adopted techniques for substrate preparation that do not require heating above…”
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Characteristics of HgCdTe/CdTe hetero-epitaxial system and mid-wave diodes on 2 inch silicon
Published in Journal of crystal growth (01-05-1999)“…Two-inch (1 1 2) Si wafers were used to grow HgCdTe/CdTe structures by molecular beam epitaxy. Etch-pit density on CdTe layers in the thickness range 7–8 μm…”
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Risk factors of type 2 diabetes in population of Jammu and Kashmir, India
Published in Journal of biomedical research (01-09-2013)“…We sought to identify risk factors for type 2 diabetes (T2D) in Jammu and Kashmir populations, India. A total of 424 diabetic and 226 non-diabetic subjects…”
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Buprenorphine withdrawal syndrome
Published in Indian journal of psychiatry (01-01-1995)“…The increasing use of buprenorphine among drug dependent subjects demands systematic enquiry into the clinical profile of buprenorphine withdrawal. Six male…”
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Simultaneous two-color Infrared detectors based on MBE-grown HgCdTe heterostructures
Published in 2007 International Semiconductor Device Research Symposium (01-12-2007)“…We present here a two-color IR detector technology based on HgCdTe heterostructures grown by molecular beam epitaxy (MBE). Increased uniformity in composition,…”
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Microstructural examination of the influence of Si substrate orientation on the morphology of CdTe/ZnTe films
Published in International Semiconductor Device Research Symposium, 2003 (2003)“…In this paper, we study about the microstructural characterization of CdTe/ZnTe thin films grown on Si substrates having (311), (211), and (111) orientations…”
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Schizophrenia - electrolyte profile & the effect of treatment
Published in Indian journal of psychiatry (01-07-1987)Get full text
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Psychiatric morbidity in patients attending medical opd
Published in Indian journal of psychiatry (01-07-1987)“…Psychiatric morbidity was analysed in 5,000 female patients who attended medical OPD from July 1985 to July 1986. The Psychiatric illnesses were found in 932…”
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An unusual foreign body in the palate
Published in British journal of plastic surgery (01-04-1974)Get more information
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