Search Results - "Dhar, N K"

3D far-field Lidar sensing and computational modeling for human identification by Glandon, A, Vidyaratne, L, Dhar, N K, Familoni, B O, Sadeghzadehyazdi, N, Acton, S T, Iftekharuddin, K M

“…3D sensors offer depth sensing that may be used for task-specific data processing and computational modeling. Many existing methods for human identification…”
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Modeling of LWIR HgCdTe Auger-Suppressed Infrared Photodiodes under Nonequilibrium Operation by Emelie, P.Y., Velicu, S., Grein, C.H., Phillips, J.D., Wijewarnasuriya, P.S., Dhar, N.K.

“…The general approach and effects of nonequilibrium operation of Auger-suppressed HgCdTe infrared photodiodes are well understood. However, the complex…”
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MBE growth of CdSeTe/Si composite substrate for long-wavelength IR HgCdTe applications by Chen, Y.P., Brill, G., Dhar, N.K.

“…For the first time, the ternary alloy CdSe x Te 1− x (2 1 1) has been grown on Si(2 1 1) substrates using molecular beam epitaxy. The growth of CdSeTe was…”
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Status of LWIR HgCdTe-on-Silicon FPA Technology by Carmody, M., Pasko, J.G., Edwall, D., Piquette, E., Kangas, M., Freeman, S., Arias, J., Jacobs, R., Mason, W., Stoltz, A., Chen, Y., Dhar, N.K.

“…The use of silicon as an alternative substrate to bulk CdZnTe for epitaxial growth of HgCdTe for infrared detector applications is attractive because of…”
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Role of dislocation scattering on the electron mobility of n-type long wave length infrared HgCdTe on silicon by CARMODY, M, EDWALL, D, DHAR, N. K, ELLSWORTH, J, ARIAS, J, GROENERT, M, JACOBS, R, ALMEIDA, L. A, DINAN, J. H, CHEN, Y, BRILL, G

“…It has been reported that the basic electrical properties of n-type long wave length infrared (LWIR) HgCdTe grown on silicon, including the majority carrier…”
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Nucleation of ZnTe/CdTe epitaxy on high-miller-index Si surfaces by BRILL, G, CHEN, Y, DHAR, N. K, SINGH, R

“…Tellurium-adsorption studies were conducted on {111}-type Si surfaces that are off-cut from the {111} in the range of 0-30DG on both nonpassivated- and…”
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Molecular beam epitaxial growth and characterization of Cd-based II-VI wide-bandgap compounds on Si substrates by BRILL, G, CHEN, Y, AMIRTHARAJ, P. M, SARNEY, W, CHANDLER-HOROWITZ, D, DHAR, N. K

“…We have carried out a detailed study on the growth of Cd-based II-VI compounds on Si substrates using molecular beam epitaxy (MBE). CdTe, CdSe, CdSeTe, and…”
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LWIR HgCdTe on Si detector performance and analysis by CARMODY, M, PASKO, J. G, DHAR, N. K, EDWALL, D, BAILEY, R, ARIAS, J, GROENERT, M, ALMEIDA, L. A, DINAN, J. H, CHEN, Y, BRILL, G

“…We have fabricated a series of 256 pixel × 256 pixel, 40 µm pitch LWIR focal plane arrays (FPAs) with HgCdTe grown on (211) silicon substrates using MBE grown…”
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Molecular beam epitaxy grown long wavelength infrared HgCdTe on Si detector performance by CARMODY, M, PASKO, J. G, STOLTZ, A. J, CHEN, Y, BRILL, G, DHAR, N. K, EDWALL, D, BAILEY, R, ARIAS, J, CABELLI, S, BAJAJ, J, ALMEIDA, L. A, DINAN, J. H, GROENERT, M

“…The use of silicon as a substrate alternative to bulk CdZnTe for epitaxial growth of HgCdTe for infrared (IR) detector applications is attractive because of…”
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Long wavelength infrared, molecular beam epitaxy, HgCdTe-on-Si diode performance by CARMODY, M, PASKO, J. G, DHAR, N. K, EDWALL, D, DARASELIA, M, ALMEIDA, L. A, MOLSTAD, J, DINAN, J. H, MARKUNAS, J. K, CHEN, Y, BRILL, G

“…In the past several years, we have made significant progress in the growth of CdTe buffer layers on Si wafers using molecular beam epitaxy (MBE) as well as the…”
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MBE growth and device processing of MWIR HgCdTe on large area Si substrates by BRILL, G, VELICU, S, BOIERIU, P, CHEN, Y, DHAR, N. K, LEE, T. S, SELAMET, Y, SIVANANTHAN, S

“…The traditional substrate of choice for HgCdTe material growth has been lattice matched bulk CdZnTe material. However, as larger array sizes are required for…”
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Molecular beam epitaxial growth of Cd1-yZnySexTe1-x on Si(211) by CHEN, Y. P, BRILL, G, CAMPO, E. M, HIERL, T, HWANG, J. C. M, DHAR, N. K

“…We report on the first successful growth of the quaternary alloy Cd1-yZnySexTe1-x(211) on 3-in. Si(211) substrates using molecular beam epitaxy (MBE). The…”
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Molecular-beam epitaxial growth of CdsexTe1-x on Si(211) by CHEN, Y. P, BRILL, G, DHAR, N. K

“…We report on the first successful growth of the ternary-alloy CdSexTe1-x(211) on 3-in. Si(211) substrates using molecular-beam epitaxy (MBE). The growth of…”
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Monolithically integrated HgCdTe focal plane arrays by VELICU, S, LEE, T. S, GREIN, C. H, BOIERIU, P, CHEN, Y. P, DHAR, N. K, DINAN, J, LIANOS, D

“…The cost and performance of hybrid HgCdTe infrared (IR) focal plane arrays are constrained by the necessity of fabricating the detector arrays on a CdZnTe…”
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High-Performance MWIR HgCdTe on Si Substrate Focal Plane Array Development by Bommena, R., Ketharanathan, S., Wijewarnasuriya, P. S., Dhar, N. K., Kodama, R., Zhao, J., Buurma, C., Bergeson, J. D., Aqariden, F., Velicu, S.

“…The development of low noise-equivalent differential temperature (NEDT), high-operability midwave infrared (MWIR) focal plane arrays (FPAs) fabricated from…”
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Heteroepitaxy of CdTe on {211}Si substrates by molecular beam epitaxy by Million, A., Dhar, N.K., Dinan, J.H.

“…Direct growth of (211)CdTe on Si has been achieved by molecular beam epitaxy. We adopted techniques for substrate preparation that do not require heating above…”
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Variable area MWIR diodes on HgCdTe/Si grown by molecular beam epitaxy by Ashokan, R., Dhar, N. K., Yang, B., Akhiyat, A., Lee, T. S., Rujirawat, S., Yousuf, S., Sivananthan, S.

“…Molecular beam epitaxy technique has been used to grow double layer heterostructure mercury cadmium telluride materials on silicon substrates for infrared…”
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Enhanced Photon Absorption in Subwavelength Mercury Cadmium Telluride Layer for Infrared Detectors Operating at Higher Temperature by Sojib, Md, Sayeed, R., Avrutin, V., Ozgur, U., Dhar, N. K.

“…Enhancement of incident photon absorption in a subwavelength thick Mercury-Cadmium-Telluride (Hg 1-x Cd x Te, MCT) has been numerically analyzed in the MWIR…”
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HgCdTe heteroepitaxy on three-inch (112) CdZnTe/Si: Ellipsometric control of substrate temperature by Almeida, L. A., Dhar, N. K., Martinka, M., Dinan, J. H.

“…The technique of spectroscopic ellipsometry (SE) has been utilized to monitor in real-time and precisely control the surface temperature of Hg sub(1-x)Cd…”
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Analysis of Dislocation Density in Pb(1−x)SnxSe Grown on ZnTe/Si by MBE by Taylor, P. J., Dhar, N. K., Harris, E., Swaminathan, V., Chen, Y., Jesser, W. A.

“…The growth of (211) Pb (1− x ) Sn x Se on Si is achieved with a thick ZnTe buffer layer. The obtained films are specular, but contain widely dispersed void…”
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