Search Results - "Devaraju, G."

Ion beam studies of Hafnium based alternate high-k dielectric films deposited on silicon by Manikanthababu, N., Chan, T.K., Pathak, A.P., Devaraju, G., Srinivasa Rao, N., Yang, P., Breese, M.B.H., Osipowicz, T., Nageswara Rao, S.V.S.

“…Hafnium based high dielectric constant materials are critical for the state-of-the-art integrated circuit technology. As the size of the transistor decreases,…”
Get full text

Ion beam irradiation effects on Ge nanocrystals synthesized by using RF sputtering followed by RTA by Saikiran, V., Srinivasa Rao, N., Devaraju, G., Chang, G.S., Pathak, Anand P.

“…Here we report the effects of ion beam irradiation on Ge nanocrystals (NCs) embedded in SiO2 matrix. The Ge NCs embedded in silicon oxide matrix have been…”
Get full text

Effects of swift heavy ion irradiation on band gap of strained AlGaN/GaN Multi Quantum Wells by Devaraju, G., Sathish, N., Pathak, A.P., Turos, A., Bazzan, M., Trave, E., Mazzoldi, P., Arora, B.M.

“…III-Nitrides have attracted much attention due to their versatile and wide range of applications, such as blue/UV light emitting diodes. Strained layer super…”
Get full text

Growth and characterization of nc-Ge prepared by microwave annealing by Srinivasa Rao, N., Pathak, A.P., Devaraju, G., Saikiran, V.

“…Ge nanocrystals embedded in Silicon oxide matrix have been synthesized on Si substrate by co-sputtering of SiO 2 and Ge using RF magnetron sputtering…”
Get full text

Bronchospasm: Not always the cause for tight bag by Nataraj, Srinivasan, Sreelakshmi, Devaraju, Bharathi, Narayan

Get full text

Electronic stopping dependence of ion beam induced modifications in GaN by Devaraju, G., Pathak, A.P., Sathish, N., Srinivasa Rao, N., Saikiran, V., Titov, A.I.

“…We report here Swift heavy ion induced effects in GaN samples grown by metal organic chemical vapor deposition (MOCVD) technique. These samples were irradiated…”
Get full text

Synthesis of Ge nanocrystals by atom beam sputtering and subsequent rapid thermal annealing by Srinivasa Rao, N., Pathak, A.P., Sathish, N., Devaraju, G., Saikiran, V., Kulriya, P.K., Agarwal, D.C., Sai Saravanan, G., Avasthi, D.K.

“…Ge nanocrystals embedded in an SiO 2 matrix were prepared by the atom beam co-sputtering (ABS) method from a composite target of Ge and SiO 2. The as-deposited…”
Get full text

SHI induced re-crystallization of Ge implanted SiO2 films by Rao, N. Srinivasa, Pathak, A.P., Sathish, N., Devaraju, G., Khan, S.A., Saravanan, K., Panigrahi, B.K., Nair, K.G.M., Avasthi, D.K.

“…Ge nanocrystals embedded in SiO2 matrix have been synthesized by swift heavy ion irradiation of Ge implanted SiO2 films. In the present study, 400keV Ge+ ions…”
Get full text

Ion beam studies of multi-quantum wells of III-nitrides by Pathak, A.P., Devaraju, G., Sathish, N., Kyriakou, I.

“…III-Nitrides have attracted much attention due to their versatile and wide range of applications, such as blue/UV light emitting diodes. Strained layer super…”
Get full text

SHI irradiation induced effects in functionalized MWCNTs by Saikiran, V., Pathak, A. P., Srinivasa Rao, N., Devaraju, G., Debgupta, Joyashish, Kyriakou, I., Emfietzoglou, D.

“…Multi-walled carbon nanotubes (MWCNTs) have attracted extensive attention globally due to their applications in modern nanotechnology. It is very important to…”
Get full text

Effects of concentration and thermal annealing on the optical activation of Er implanted into GaN layers by Sathish, N., Pathak, A. P., Devaraju, G., Trave, E., Mazzoldi, P., Dhamodaran, S., Kulkarni, V. N.

“…The wide band gap semiconductor, GaN, has emerged as an important host for rare earth-electroluminescence. The annealing behaviour and lattice site location of…”
Get full text

Ion beam-mixing effects in nearly lattice-matched AlInN/GaN heterostructures by swift heavy ion irradiation by Devaraju, G., Nageswara Rao, S. V.S., Rao, N. Srinivasa, Saikiran, V., Chan, T. K., Osipowicz, T., Breese, M. B.H., Pathak, A. P.

“…Ion beam-induced intermixing is of great interest and has been observed in various systems such as metal-semiconductor interfaces. However, similar effects in…”
Get full text

Synthesis and tailoring of GaN nanocrystals at room temperature by RF magnetron sputtering by Devaraju, G., Pathak, A. P., Srinivasa Rao, N., Saikiran, V., Nageswara Rao, S. V.S., Titov, A. I.

“…We report here the synthesis of hexagonal GaN nanocrystals on p-silicon substrates by Radio-Frequency (RF) magnetron sputtering without substrate heating or by…”
Get full text

Ion-beam-treated strained AlGaN/GaN multi-quantum wells: HAADF-STEM, HRTEM, Raman and HRXRD characterizations by Devaraju, G., Pathak, A. P., Srinivasa Rao, N., Saikiran, V., Wang, D., Scherer, T., Mishra, A. K., Kübel, C.

“…Ion beams are extensively used for the modification and analysis of a wide range of materials. However, basic mechanisms of defect propagation with the effect…”
Get full text

Photoluminescence and photoluminescence excitation studies in 80MeV Ni ion irradiated MOCVD grown GaN by Devaraju, G., Pathak, A.P., Srinivasa Rao, N., Saikiran, V., Enrichi, Francesco, Trave, Enrico

Get full text

Implementing a power aware QoS constraints routing protocol in MANETs by Shivashankar, Varaprasad, G., Suresh, H. N., Devaraju, G.

“…This paper presents a source based power-aware reactive routing protocol for Mobile Ad hoc Networks (MANETs). It considers Quality of Service (QoS) parameters…”
Get full text

SHI irradiation fluence and energyloss dependence effects on Ge NCs with different initial sizes embedded in SiO2 by Saikiran, V., Srinivasa Rao, N., Devaraju, G., Pathak, A.P.

“…Ge nanocrystals embedded in SiO2 have been synthesized by Rapid Thermal Annealing of co-deposited Ge and SiO2 samples using RF magnetron sputtering. The dense…”
Get full text

Formation of Ge nanocrystals from ion-irradiated GeO2 nanocrystals by swift Ni ion beam by Saikiran, V., Srinivasa Rao, N., Devaraju, G., Chang, G.S., Pathak, A.P.

“…GeO2 nanocrystal (NC) thin films were deposited on Si substrate using a magnetron sputtering method and irradiated with swift heavy ions of 80MeV Ni at various…”
Get full text

Photoluminescence and photoluminescence excitation studies in 80 MeV Ni ion irradiated MOCVD grown GaN by Devaraju, G., Pathak, A.P., Srinivasa Rao, N., Saikiran, V., Enrichi, Francesco, Trave, Enrico

“…► MOCVD grown GaN samples are irradiated with 80 MeV Ni ions at room temperature. ► PL and PLE studies have been carried out for band to band, BL and YL…”
Get full text

Photoluminescence and photoluminescence excitation studies in 80<ce:hsp sp="0.25"/>MeV Ni ion irradiated MOCVD grown GaN by Devaraju, G, Pathak, AP, Srinivasa Rao, N, Saikiran, V, Enrichi, Francesco, Trave, Enrico

“…We report damage creation and annihilation under energetic ion bombardment at a fixed fluence. MOCVD grown GaN thin films were irradiated with 80MeV Ni ions at…”
Get full text