Search Results - "Deutschmann, R A"

  • Showing 1 - 18 results of 18
Refine Results
  1. 1

    Gate-voltage control of spin interactions between electrons and nuclei in a semiconductor by Smet, J. H, Deutschmann, R. A, Ertl, F, Wegscheider, W, Abstreiter, G, von Klitzing, K

    Published in Nature (London) (17-01-2002)
    “…Semiconductors are ubiquitous in device electronics, because their charge distributions can be conveniently manipulated with voltages to perform logic…”
    Get full text
    Journal Article
  2. 2

    Ising ferromagnetism and domain morphology in the fractional quantum Hall regime by Smet, J H, Deutschmann, R A, Wegscheider, W, Abstreiter, G, von Klitzing, K

    Published in Physical review letters (12-03-2001)
    “…The density driven quantum phase transition between the unpolarized and fully spin polarized nu = 2/3 fractional quantum Hall state is accompanied by…”
    Get full text
    Journal Article
  3. 3

    Anomalous-filling-factor-dependent nuclear-spin polarization in a 2D electron system by Smet, J H, Deutschmann, R A, Ertl, F, Wegschei der, W, Abstreiter, G, von Klitzing, K

    Published in Physical review letters (27-02-2004)
    “…Spin-related electronic phase transitions in the fractional quantum Hall regime are accompanied by a large change in resistance. Combined with their…”
    Get full text
    Journal Article
  4. 4

    Quantum interference in artificial band structures by Deutschmann, R A, Wegscheider, W, Rother, M, Bichler, M, Abstreiter, G, Albrecht, C, Smet, J H

    Published in Physical review letters (26-02-2001)
    “…Magnetotransport experiments on two-dimensional electron systems with an atomically precise, one-dimensional potential modulation reveal striking quantum…”
    Get full text
    Journal Article
  5. 5

    Influence of Thiol Coupling on Photoluminescence of Near Surface InAs Quantum Dots by Duijs, E.F., Findeis, F., Deutschmann, R.A., Bichler, M., Zrenner, A., Abstreiter, G., Adlkofer, K., Tanaka, M., Sackmann, E.

    Published in Physica status solidi. B. Basic research (01-04-2001)
    “…Photoluminescence (PL) of near surface InAs quantum dots (QDs) has been studied as a function of the distance to the surface (30, 20, 10, 6 nm). We observe a…”
    Get full text
    Journal Article Conference Proceeding
  6. 6

    Miniband transport in vertical superlattice field-effect transistors by Deutschmann, R. A., Wegscheider, W., Rother, M., Bichler, M., Abstreiter, G.

    Published in Applied physics letters (03-09-2001)
    “…We study the nonequilibrium transport of two-dimensional electrons through a periodic potential. Our samples are fabricated using the cleaved-edge overgrowth…”
    Get full text
    Journal Article
  7. 7

    Local laser induced rapid thermal oxidation of SOI substrates by Huber, M., Deutschmann, R.A., Neumann, R., Brunner, K., Abstreiter, G.

    Published in Applied surface science (15-12-2000)
    “…A direct method for lateral patterning of silicon on insulator (SOI) films with sub-μm resolution is presented. This method is based on rapid thermal oxidation…”
    Get full text
    Journal Article Conference Proceeding
  8. 8

    Direct sub-μm lateral patterning of SOI by focused laser beam induced oxidation by Deutschmann, R.A, Huber, M, Neumann, R, Brunner, K, Abstreiter, G

    Published in Microelectronic engineering (1999)
    “…We have developed a method for resistless patterning of Silicon-On-Insulator (SOI) in order to directly achieve lateral dielectric isolation. Our method…”
    Get full text
    Journal Article Conference Proceeding
  9. 9

    Evidence of Luttinger liquid behavior in GaAs/AlGaAs quantum wires by Rother, M, Wegscheider, W, Deutschmann, R.A, Bichler, M, Abstreiter, G

    “…We present low-temperature measurements of the ballistic transport in high-quality quantum wires. As the Fermi energy is varied, the conductance of these wires…”
    Get full text
    Journal Article
  10. 10

    Tunneling in the quantum Hall regime between orthogonal quantum wells by Huber, M., Grayson, M., Rother, M., Deutschmann, R.A., Biberacher, W., Wegscheider, W., Bichler, M., Abstreiter, G.

    “…We present experimental investigations of tunneling between two quantum wells forming a T-shaped structure. At zero magnetic field we observe a nonlinear…”
    Get full text
    Journal Article
  11. 11

    Commensurability effects in lateral surface-doped superlattices by Deutschmann, R. A., Stocken, C., Wegscheider, W., Bichler, M., Abstreiter, G.

    Published in Applied physics letters (09-04-2001)
    “…We fabricate density-modulated two-dimensional electron systems by shallow compensation doping the donor layer of a modulation-doped heterostructure. Zinc…”
    Get full text
    Journal Article
  12. 12

    Miniband transport in vertical superlattice field effect transistors by Deutschmann, R.A, Wegscheider, W, Rother, M, Bichler, M, Abstreiter, G

    “…The non-equilibrium transport of electrons confined at an atomically sharp interface and subject to a periodic potential is studied. We find a pronounced…”
    Get full text
    Journal Article
  13. 13

    Breakdown of Shubnikov–de Haas oscillations in a short-period 1D lateral superlattice by Deutschmann, R.A., Lorke, A., Wegscheider, W., Bichler, M., Abstreiter, G.

    “…Magnetic breakdown is observed in a two-dimensional electron system subject to a strong, atomically precise, one-dimensional potential with a period of 15 nm…”
    Get full text
    Journal Article
  14. 14

    Negative differential resistance of a 2D electron gas in a 1D miniband by Deutschmann, R.A, Wegscheider, W, Rother, M, Bichler, M, Abstreiter, G

    “…We experimentally investigate the miniband transport in a novel kind of superlattice fabricated by the “cleaved edge overgrowth” method. The structure…”
    Get full text
    Journal Article
  15. 15

    Gate-voltage control of spin interactions between electrons and nuclei in a semiconductor by Smet, J.H., Deutschmann, R.A., Ertl, F., Wegscheider, W., Abstreiter, G., von Klitzing, K.

    “…Semiconductors are ubiquitous in device electronics, because their charge distributions can be conveniently manipulated with applied voltages to perform logic…”
    Get full text
    Journal Article
  16. 16

    Vertical field effect transistors realized by cleaved-edge overgrowth by Ertl, F, Asperger, T, Deutschmann, R.A, Wegscheider, W, Bichler, M, Böhm, G, Abstreiter, G

    “…We present a brief survey of vertical transistor devices fabricated by the cleaved-edge overgrowth technique. Different device types are realized using…”
    Get full text
    Journal Article
  17. 17

    Pulse-based 2-D motion sensors by Higgins, C.M., Deutschmann, R.A., Koch, C.

    “…We present two compact CMOS integrated circuits for computing the two-dimensional (2-D) local direction of motion of an image focused directly onto the chip…”
    Get full text
    Journal Article
  18. 18

    An analog VLSI velocity sensor using the gradient method by Deutschmann, R.A., Koch, C.

    “…Smart vision sensors that unify imaging and computation on one single chip offer great advantage over conventional sensor systems, where the computational part…”
    Get full text
    Conference Proceeding