Search Results - "Detzel, Thomas"
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A comparative micro-cantilever study of the mechanical behavior of silicon based passivation films
Published in Thin solid films (02-11-2009)“…A comprehensive study on the mechanical behavior of plasma enhanced chemical vapor deposited silicon oxide, oxynitride and nitride thin films is provided…”
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Journal Article -
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Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs
Published in IEEE electron device letters (01-04-2014)“…Pulse behavior of insulated-gate double-field-plate power AlGaN/GaN HEMTs with C-doped buffers showing small current-collapse effects and dynamic RDS,on…”
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Interface fracture properties of thin films studied by using the micro-cantilever deflection technique
Published in Surface & coatings technology (25-12-2009)“…The mechanical behavior of interfaces between silicon oxide and metallic thin films is investigated using an alternative approach which is based on the…”
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Journal Article Conference Proceeding -
4
Micron-sized fracture experiments on amorphous SiOx films and SiOx/SiNx multi-layers
Published in Thin solid films (02-08-2010)“…In this study miniaturized monolithic cantilevers of thermally grown silicon oxide and multi-layer cantilevers of plasma enhanced chemical vapor deposited…”
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On the temperature dependence of Na migration in thin SiO 2 films during ToF-SIMS O 2 + depth profiling
Published in Applied surface science (15-10-2010)“…The detection of Na in insulating samples by means of time of flight-secondary ion mass spectrometry (ToF-SIMS) depth profiling has always been a challenge. In…”
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The effect of bias-temperature stress on Na+ incorporation into thin insulating films
Published in Analytical and bioanalytical chemistry (01-05-2011)“…The action of Na + incorporation into thin insulating films and transport therein under influence of a bias voltage and temperature (BT stress) is the subject…”
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On the temperature dependence of Na migration in thin SiO2 films during ToF-SIMS O2+ depth profiling
Published in Applied surface science (01-10-2010)Get full text
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On the temperature dependence of Na migration in thin Si02 films during ToF-SIMS O2+ depth profiling
Published in Applied surface science (2010)Get full text
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Erratum to: The effect of bias-temperature stress on [Na.sup.+] incorporation into thin insulating films
Published in Analytical and bioanalytical chemistry (01-07-2011)Get full text
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Erratum to: The effect of bias-temperature stress on Na+ incorporation into thin insulating films
Published in Analytical and bioanalytical chemistry (01-07-2011)Get full text
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The effect of bias-temperature stress on N[a.sup.+] incorporation into thin insulating films
Published in Analytical and bioanalytical chemistry (01-05-2011)“…The action of N[a.sup.+] incorporation into thin insulating films and transport therein under influence of a bias voltage and temperature (BT stress) is the…”
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Microscopic stress simulation of non-planar chip technologies
Published in Microelectronics and reliability (01-09-2010)“…Finite element simulations were used to study the thermo-mechanical stress state at the chip corner in a chip–package system. Accurate geometry of a non-planar…”
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Journal Article Conference Proceeding -
14
Modeling of stress evolution of electroplated Cu films during self-annealing
Published in 2010 IEEE International Reliability Physics Symposium (01-05-2010)“…Electroplated Cu films are known to change their microstructure at room temperature due to the self-annealing effect. This recrystallization process results in…”
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Conference Proceeding -
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The Commercialization of GaN Power Devices: Value Proposition, Manufacturing, and Reliability
Published in 2019 Compound Semiconductor Week (CSW) (01-05-2019)“…Compact devices with unique switching performance, this has been the promise of GaN power devices since several years. After a development journey of more than…”
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Conference Proceeding -
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Modeling of multi-temperature-cycle wafer curvature
Published in 2010 12th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (01-06-2010)“…A multi-temperature-cycle wafer curvature experiment was performed in order to study the temperature dependent material properties of copper films. The…”
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Conference Proceeding -
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Disparate tendency of stress evolution of thin and thick electroplated Cu films at room temperature
Published in 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (01-07-2010)“…The self-annealing effect of electroplated copper films was investigated by measuring the time dependence of the film stress for different film thicknesses…”
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Conference Proceeding -
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Prediction of wafer bow through thermomechanical simulation of patterned hard coated copper films
Published in EuroSimE 2008 - International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems (01-04-2008)“…Due to the large difference in the coefficients of thermal expansion of the materials used in advanced semiconductor manufacturing, the fabrication process of…”
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Conference Proceeding -
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Stress, Sheet Resistance, and Microstructure Evolution of Electroplated Cu Films During Self-Annealing
Published in IEEE transactions on device and materials reliability (01-03-2010)“…Electroplated copper films are known to change their microstructure due to the self-annealing effect. The self-annealing effect of electroplated copper films…”
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