Search Results - "Denyszyn, Jonathan C."

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  1. 1
    High-performance solar-blind photodetector using an Al0.6Ga0.4N n-type window layer

    High-performance solar-blind photodetector using an Al0.6Ga0.4N n-type window layer by CHOWDHURY, Uttiya, WONG, Michael M, COLLINS, Charles J, BO YANG, DENYSZYN, Jonathan C, CAMPBELL, Joe C, DUPUIS, Russell D

    Published in Journal of crystal growth (01-02-2003)
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  2. 2
    AlGaN/AlGaN UV light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition

    AlGaN/AlGaN UV light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition by Zhu, Ting Gang, Chowdhury, Uttiya, Denyszyn, Jonathan C., Wong, Michael M., Dupuis, Russell D.

    Published in Journal of crystal growth (01-02-2003)
    “…We report the electrical and optical characteristics of an AlGaN/AlGaN quantumwell ultraviolet (UV) light-emitting diode (LED) grown on sapphire by…”
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  3. 3
    GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

    GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition by Zhu, Ting Gang, Chowdhury, Uttiya, Wong, Michael M, Denyszyn, Jonathan C, Dupuis, Russell D

    Published in Journal of electronic materials (01-05-2002)
    “…In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire…”
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  4. 4
    Improved Performance of AlGaN/GaN Heterojunction Field-Effect Transistors Using Delta Doping and a Binary Barrier

    Improved Performance of AlGaN/GaN Heterojunction Field-Effect Transistors Using Delta Doping and a Binary Barrier by Wong, Michael M., Chowdhury, Uttiya, Sicault, Delphine, Becher, David T., Denyszyn, Jonathan C., Choi, Jin Ho, Zhu, Ting Gang, Feng, Milton, Dupuis, Russell D.

    Published in Japanese Journal of Applied Physics (01-04-2003)
    “…The improved performance of AlGaN/GaN heterojunction field-effect transistors using a delta-doping approach along with an AlN binary barrier is reported…”
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  5. 5
    High-performance solar-blind photodetector using an Al 0.6Ga 0.4N n-type window layer

    High-performance solar-blind photodetector using an Al 0.6Ga 0.4N n-type window layer by Chowdhury, Uttiya, Wong, Michael M., Collins, Charles J., Yang, Bo, Denyszyn, Jonathan C., Campbell, Joe C., Dupuis, Russell D.

    Published in Journal of crystal growth (2003)
    “…In this paper, we report a significant improvement in the external quantum efficiency (EQE) of AlGaN p–i–n solar-blind detectors (SBDs) by use of an n-type Al…”
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  6. 6
    AlGaN-GaN UV light-emitting diodes grown on SiC by metal-organic chemical vapor deposition

    AlGaN-GaN UV light-emitting diodes grown on SiC by metal-organic chemical vapor deposition by Ting Gang Zhu, Denyszyn, J.C., Chowdhury, U., Wong, M.M., Dupuis, R.D.

    “…We report the study of the electrical and optical characteristics of AlGaN-GaN quantum-well (QW) ultraviolet light-emitting diodes grown on SiC by…”
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  7. 7
    GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition : III-V Nitrides and Silicon Carbide

    GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition : III-V Nitrides and Silicon Carbide by TING GANG ZHU, CHOWDHURY, Uttiya, WONG, Michael M, DENYSZYN, Jonathan C, DUPUIS, Russell D

    Published in Journal of electronic materials (2002)
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