Search Results - "Dennard, Robert H."

An 8T-SRAM for Variability Tolerance and Low-Voltage Operation in High-Performance Caches by Chang, L., Montoye, R.K., Nakamura, Y., Batson, K.A., Eickemeyer, R.J., Dennard, R.H., Haensch, W., Jamsek, D.

“…An eight-transistor (8T) cell is proposed to improve variability tolerance and low-voltage operation in high-speed SRAM caches. While the cell itself can be…”
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Advanced FDSOI Device Design: The U-Channel Device for 7 nm Node and Beyond by Muralidhar, Ramachandran, Dennard, Robert H., Ando, Takashi, Lauer, Isaac, Hook, Terence

“…In this paper, we propose the extendibility of ultra-thin body and box (UTBB) devices to 7 and 5 nm technology nodes focusing on electrostatics. A difficulty…”
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Practical Strategies for Power-Efficient Computing Technologies by Chang, Leland, Frank, David J., Montoye, Robert K., Koester, Steven J., Ji, Brian L., Coteus, Paul W., Dennard, Robert H., Haensch, Wilfried

“…After decades of continuous scaling, further advancement of silicon microelectronics across the entire spectrum of computing applications is today limited by…”
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A Quarterback's Passion and Desire to Win [People] by Dennard, Robert H.

“…Recounts the career and contributions of Jim Meindl…”
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A novel dynamic memory cell with internal voltage gain by Luk, W.K., Dennard, R.H.

“…A 2T1D dynamic memory cell with two transistors (T) and a gated diode (D) is presented. A gated diode is a two terminal MOS device in which charge is stored…”
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Design Of Ion-implanted MOSFET's with Very Small Physical Dimensions by Dennard, R.H., Gaensslen, F.H., Hwa-Nien Yu, Rideout, V.L., Bassous, E., Leblanc, A.R.

“…This paper considers the design, fabrication, and characterization of the very small MOSFET switching devices suitable for digital integrated circuits using…”
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Creativity in the 2000s and Beyond by Dennard, Robert H.

“…The tremendous progress in science and technology in the last millennium and its rapid acceleration in the last century are due to the remarkable creativity of…”
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How we made DRAM by Dennard, Robert H.

“…The emergence of dynamic random access memory (DRAM) in the 1970s had a huge impact on the future of digital computing. Its inventor, Robert H. Dennard,…”
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A perspective on today’s scaling challenges and possible future directions by Dennard, Robert H., Cai, Jin, Kumar, Arvind

“…Progress in scaling of MOS transistors and integrated circuits over the years is reviewed and today’s status and challenges are described. Generalized scaling…”
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Device scaling limits of Si MOSFETs and their application dependencies by Frank, D.J., Dennard, R.H., Nowak, E., Solomon, P.M., Taur, Y., Hon-Sum Philip Wong

“…This paper presents the current state of understanding of the factors that limit the continued scaling of Si complementary metal-oxide-semiconductor (CMOS)…”
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Revisiting "Evolution of the MOSFET Dynamic RAM - A Personal View" by Dennard, Robert H.

“…This first-person account of the early days of semiconductor memory development is reprinted from the IEEE Transactions on Electron Devices, Vol ED-31, no 11,…”
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Stable SRAM cell design for the 32 nm node and beyond by Chang, L., Fried, D.M., Hergenrother, J., Sleight, J.W., Dennard, R.H., Montoye, R.K., Sekaric, L., McNab, S.J., Topol, A.W., Adams, C.D., Guarini, K.W., Haensch, W.

“…SRAM cell stability will be a primary concern for future technologies due to variability and decreasing power supply voltages. 6T-SRAM can be optimized for…”
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CMOS scaling for high performance and low power-the next ten years by Davari, B., Dennard, R.H., Shahidi, G.G.

“…A guideline for scaling of CMOS technology for logic applications such as microprocessors is presented covering the next ten years, assuming that the…”
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Practical Strategies for Power-Efficient Computing Technologies : CIRCUIT TECHNOLOGY FOR ULTRA-LOW POWER (ULP) by CHANG, Leland, FRANK, David J, MONTOYE, Robert K, KOESTER, Steven J, JI, Brian L, COTEUS, Paul W, DENNARD, Robert H, HAENSCH, Wilfried

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FDSOI CMOS with dual backgate control for performance and power modulation by Jeng-Bang Yau, Jin Cai, Shi, L., Dennard, R.H., Kumar, A., Sactlger, K.L., Reznicek, A., Solomon, P.M., Qiging Ouyang, Koester, S., Haensch, W.E.

“…We demonstrate, for the first time, modulation of power-performance of a ring oscillator fabricated on thin-BOX (buried oxide) FD (fully-depleted) SOI using…”
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When are transmission-line effects important for on-chip interconnections? by Deutsch, A., Kopcsay, G.V., Restle, P.J., Smith, H.H., Katopis, G., Becker, W.D., Coteus, P.W., Surovic, C.W., Rubin, B.J., Dunne, R.P., Gallo, T., Jenkins, K.A., Terman, L.M., Dennard, R.H., Sai-Halasz, G.A., Krauter, B.L., Knebel, D.R.

“…Short, medium, and long on-chip interconnections having linewidths of 0.45-52 /spl mu/m are analyzed in a five-metal-layer structure. We study capacitive…”
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Design of ion-implanted MOSFET's with very small physical dimensions by DENNARD, ROBERT H., GAENSSLEN, FRITZ H., YU, HWA-NIEN, LEO RIDEOVT, V., BASSOUS, ERNEST, LEBLANC, ANDRE R.

“…This paper considers the design, fabrication, and characterization of very small MOSFET switching devices suitable for digital integrated circuits using…”
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Gated-diode amplifiers by Luk, W.K., Dennard, R.H.

“…This brief describes MOS amplifiers comprising a gated diode and a field-effect transistor. A gated diode is a two-terminal MOS device in which charge is…”
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Past Progress and Future Challenges in LSI Technology: From DRAM and Scaling to Ultra-Low-Power CMOS by Dennard, Robert H.

“…I think I was very fortunate to get a chance to work in microelectronics in its very early days. Those were very exciting times, particularly the day I found…”
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Device scaling limits of Si MOSFETs and their application dependencies: The Limits of Semiconductor Technology by FRANK, David J, DENNARD, Robert H, NOWAK, Edward, SOLOMON, Paul M, TAUR, Yuan, WONG, Hon-Sum Philip

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