Search Results - "Denis Flandre"

Ultra-Scaled Si Nanowire Biosensors for Single DNA Molecule Detection by Afzalian, Aryan, Flandre, Denis

“…In this study, we use NEGF quantum transport simulations to study the fundamental detection limit of ultra-scaled Si nanowire FET (NWT) biosensors. A N-doped…”
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Comparative study of the interface passivation properties of LiF and Al2O3 using silicon MIS capacitor by Parion, Jonathan, Scaffidi, Romain, Duerinckx, Filip, Sivaramakrishnan Radhakrishnan, Hariharsudan, Flandre, Denis, Poortmans, Jef, Vermang, Bart

“…Lithium fluoride (LiF) is currently a very popular dielectric material used as a passivation or transport layer in a variety of applications, especially in…”
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Room-temperature DC-sputtered p-type CuO accumulation-mode thin-film transistors gated by HfO2 by Zeng, Xi, Zhukova, Maria, Faniel, Sébastien, Li, Guoli, Flandre, Denis

“…CuO grown by room-temperature direct current reactive magnetron sputtering is introduced to realize p-type thin-film transistors (TFTs) with a high-k HfO2 gate…”
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Comprehensive Analytical Comparison of Ring Oscillators in FDSOI Technology: Current Starving Versus Back-Bias Control by Schramme, Maxime, Van Brandt, Leopold, Flandre, Denis, Bol, David

“…Back-bias control is a new degree of freedom brought by fully-depleted silicon-on-insulator (FDSOI) CMOS technologies, which can be used to control the…”
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An Ultra-Thin Ultraviolet Enhanced Backside-Illuminated Single-Photon Avalanche Diode With 650 nm-Thin Silicon Body Based on SOI Technology by Sabri Alirezaei, Iman, Andre, Nicolas, Sedki, Amor, Gerard, Pierre, Flandre, M. Denis

“…We present the world's thinnest backside illuminated (BSI) single-photon avalanche diode (SPAD) with a silicon (Si) thickness of 650 nm fabricated in…”
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A 16 x 16 CMOS Capacitive Biosensor Array Towards Detection of Single Bacterial Cell by Couniot, Numa, Francis, Laurent A., Flandre, Denis

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Employing Si solar cell technology to increase efficiency of ultra-thin Cu(In,Ga)Se2 solar cells by Vermang, Bart, Wätjen, Jörn Timo, Fjällström, Viktor, Rostvall, Fredrik, Edoff, Marika, Kotipalli, Ratan, Henry, Frederic, Flandre, Denis

“…ABSTRACT Reducing absorber layer thickness below 500 nm in regular Cu(In,Ga)Se2 (CIGS) solar cells decreases cell efficiency considerably, as both…”
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Detection mechanism in highly sensitive ZnO nanowires network gas sensors by Caicedo, Nohora, Leturcq, Renaud, Raskin, Jean-Pierre, Flandre, Denis, Lenoble, Damien

“…•Large room-temperature response of ZnO nanowires network to oxygen sensing.•Non-linear electrical model to explain the microscopic conduction in the…”
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PCB-Based Planar Inductive Loops for Partial Discharges Detection in Power Cables by Kaziz, Sinda, Romano, Pietro, Imburgia, Antonino, Ala, Guido, Sghaier, Halim, Flandre, Denis, Tounsi, Fares

“…Partial discharge (PD) diagnosis tests, including detecting, locating, and identifying, are used to trace defects or faults and assess the degree of aging in…”
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Structural and Opto-electronic characterization of CuO thin films prepared by DC reactive magnetron sputtering by Zeng, Xi, Zhukova, Maria, Faniel, Sébastien, Proost, Joris, Flandre, Denis

“…P-type CuO thin films have been deposited and optimized for large-area photodetection applications by tuning the sputtering pressure and oxygen to argon gas…”
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Radiometric Partial Discharge Detection: A Review by Kaziz, Sinda, Said, Mohamed Hadj, Imburgia, Antonino, Maamer, Bilel, Flandre, Denis, Romano, Pietro, Tounsi, Fares

“…One of the most common failures or breakdowns that can occur in high-voltage (HV) equipment is due to partial discharges (PDs). This occurs as a result of…”
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New Universal Figure of Merit for Embedded Si Piezoresistive Pressure Sensors by Delhaye, Thibault P., Andre, Nicolas, Francis, Laurent A., Flandre, Denis

“…In this article, we are presenting a new classification methodology for high resolution membrane based MEMS piezoresistive pressure sensors embedded in…”
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Variation Range of Different Inductor Topologies with Shields for RF and Inductive Sensing Applications by Tounsi, Fares, Said, Mohamed Hadj, Hauwaert, Margo, Kaziz, Sinda, Francis, Laurent A, Raskin, Jean-Pierre, Flandre, Denis

“…In this study, different planar inductor topologies were studied to evaluate their characteristic parameters' variation range upon approaching Fe- and Cu-based…”
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Resonant dielectrophoresis and electrohydrodynamics for high-sensitivity impedance detection of whole-cell bacteria by Couniot, Numa, Francis, Laurent A, Flandre, Denis

“…We present the co-integration of CMOS-compatible Al/Al2O3 interdigitated microelectrodes (IDEs) with an electrokinetic-driven macroelectrode for sensitive…”
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Design-Window Methodology for Inductorless Noise-Cancelling CMOS LNAs by Martinez-Perez, Antonio D., Aznar, Francisco, Flandre, Denis, Celma, Santiago

“…This paper presents an optimization methodology for inductorless noise-cancelling CMOS Low-Noise Amplifiers (LNA), whose performance typically depends on a…”
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ULPFA: A New Efficient Design of a Power-Aware Full Adder by Hassoune, Ilham, Flandre, Denis, O'Connor, Ian, Legat, Jean-Didier

“…In this paper, we first propose a new structure of a hybrid full adder, namely, the branch-based logic and pass-transistor (BBL-PT) cell, which we implemented…”
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A Wearable Low-Power Sensing Platform for Environmental and Health Monitoring: The Convergence Project by Saoutieff, Elise, Polichetti, Tiziana, Jouanet, Laurent, Faucon, Adrien, Vidal, Audrey, Pereira, Alexandre, Boisseau, Sébastien, Ernst, Thomas, Miglietta, Maria Lucia, Alfano, Brigida, Massera, Ettore, De Vito, Saverio, Bui, Do Hanh Ngan, Benech, Philippe, Vuong, Tan-Phu, Moldovan, Carmen, Danlee, Yann, Walewyns, Thomas, Petre, Sylvain, Flandre, Denis, Ancans, Armands, Greitans, Modris, Ionescu, Adrian M

“…The low-power sensing platform proposed by the Convergence project is foreseen as a wireless, low-power and multifunctional wearable system empowered by…”
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Phonon-limited mobility for electrons and holes in highly-strained silicon by Roisin, Nicolas, Brunin, Guillaume, Rignanese, Gian-Marco, Flandre, Denis, Raskin, Jean-Pierre, Poncé, Samuel

“…Strain engineering is a widely used technique for enhancing the mobility of charge carriers in semiconductors, but its effect is not fully understood. In this…”
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28-nm FD-SOI CMOS RF Figures of Merit Down to 4.2 K by Nyssens, Lucas, Halder, Arka, Esfeh, Babak Kazemi, Planes, Nicolas, Flandre, Denis, Kilchytska, Valeriya, Raskin, Jean-Pierre

“…This work presents a detailed RF characterization of 28-nm FD-SOI nMOSFETs at cryogenic temperatures down to 4.2 K. Two main RF Figures of Merit (FoMs), i.e.,…”
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A Capacitorless 1T-DRAM on SOI Based on Dynamic Coupling and Double-Gate Operation by Bawedin, M., Cristoloveanu, S., Flandre, D.

“…The scaling requirements of conventional DRAMs lead to the recent developments of capacitorless single-transistor (1T) DRAM in SOI technology. We propose a new…”
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