Search Results - "Deng, Erping"

Influence of the clamping force on the power cycling lifetime reliability of press pack IGBT sub-module by Deng, Erping, Zhang, Jingwei, Zhao, Zhibin, Chen, Jie, Li, Jinyuan, Huang, Yongzhang

“…The clamping force is the most important parameter of Press Pack IGBTs (PP IGBTs) as it not only affects the electrical, thermal, and mechanical…”
Get full text

Correction of Delay-Time-Induced Maximum Junction Temperature Offset During Electrothermal Characterization of IGBT Devices by Deng, Erping, Borucki, Ludger, Lutz, Josef

“…The lifetime evaluation is strongly influenced by the measurement accuracy of the junction temperature with the V ce (T) method during power cycling test…”
Get full text

Influence of Temperature on the Pressure Distribution Within Press Pack IGBTs by Deng, Erping, Zhao, Zhibin, Lin, Zhongkang, Han, Ronggang, Huang, Yongzhang

“…Press pack (PP) packaging technology has been applied to insulated-gate bipolar transistors (IGBTs) for high-voltage and high power density applications in…”
Get full text

Junction-to-Case Thermal Resistance Measurement and Analysis of Press-Pack IGBTs Under Double-Side Cooling Condition by Chen, Jie, Deng, Erping, Zhang, Yiming, Huang, Yongzhang

“…Junction-to-case thermal resistance R thjc measurement under a double-side cooling condition of press-pack IGBTs (PP IGBTs) is a great challenge since the heat…”
Get full text

Investigations on Averaging Mechanisms of Virtual Junction Temperature Determined by V CE ( T ) Method for IGBTs by Chen, Jie, Deng, Erping, Xie, Luhong, Ying, Xiaoliang, Huang, Yongzhang

“…In this article, the physical meaning of the virtual junction temperature determined by the [Formula Omitted]([Formula Omitted]) method for insulated gate…”
Get full text

Temperature Influence on the Accuracy of the Transient Dual Interface Method for the Junction-to-Case Thermal Resistance Measurement by Deng, Erping, Chen, Weinan, Heimler, Patrick, Lutz, Josef

“…The transient dual interface method (TDIM), proposed by the JEDEC 51-14 standard <xref ref-type="bibr" rid="ref1">[1] , determines the junction-to-case thermal…”
Get full text

Influence of Thermal Coupling on Lifetime Under Power Cycling Test by Zhao, Yushan, Deng, Erping, Pan, Maoyang, Zhang, Yiming, Huang, Yongzhang

“…In this article, the influence of thermal coupling in power modules on lifetime under power cycling test (PCT) is investigated. In a full-bridge power module…”
Get full text

Study on the Method to Measure the Junction-to-Case Thermal Resistance of Press-Pack IGBTs by Deng, Erping, Zhao, Zhibin, Zhang, Peng, Li, Jinyuan, Huang, Yongzhang

“…Accurate measurement of the junction-to-case thermal resistance of press-pack insulated gate bipolar transistors (PP IGBTs) is a great challenge due to their…”
Get full text

Analysis on the difference of the characteristic between high power IGBT modules and press pack IGBTs by Deng, Erping, Zhao, Zhibin, Xin, Qingming, Zhang, Jingwei, Huang, Yongzhang

“…The insulated gate bipolar transistor (IGBT) has been widely employed in such applications as alternate current motors and inverters for its lower driving…”
Get full text

Investigations on Averaging Mechanisms of Virtual Junction Temperature Determined by VCE (T) Method for IGBTs by Chen, Jie, Deng, Erping, Xie, Luhong, Ying, Xiaoliang, Huang, Yongzhang

“…In this article, the physical meaning of the virtual junction temperature determined by the <inline-formula> <tex-math notation="LaTeX">{V}_{\text {CE}}…”
Get full text

Measurement Error Caused by the Square Root t Method Applied to IGBT Devices during Power Cycling Test by Deng, Erping, Lutz, Josef

“…In this paper, the measurement error caused by the square root t method applied to IGBT devices during power cycling tests is analyzed in detail by the finite…”
Get full text

A Multi-Currents Method for Junction Temperature Separation of Cascode GaN by Wu, Lixin, Deng, Erping, Wang, Yanhao, Xu, Shengqian, Hua, Wenbo, Yang, Shaohua, Ding, Lijian

“…Gallium nitride (GaN) power electronics are becoming widely used in power conversion systems due to their high electron mobility. The cascode structure, with a…”
Get full text

Optimization and Validation of Current Sharing in IGBT Modules With Multichips in Parallel by Chang, Guiqin, Peng, Cheng, Liu, Yuanjian, Deng, Erping, Li, Xiang, Xiao, Qiang, Huang, Yongzhang

“…Multichips paralleled insulated gate bipolar transistor (IGBT) power modules are widely employed in industrial and automotive power conversion systems. The…”
Get full text

Study on High Voltage Reverse Bias (HTRB) Test Method of 6.5 kV High-Voltage IGBT Modules for Railway by Yan, Yuxing, Wang, Weijie, Deng, Erping, Wang, Zuoyi, Wang, Yanhao, He, Qingtong, Sun, Hongyu, Huang, Yongzhang

“…In this article, a temperature stabilization method of high-temperature reverse bias (HTRB) and high-voltage high-temperature high-humidity reverse bias…”
Get full text

Remaining Useful Lifetime Prediction Method of Power Modules Based on the Aging Characteristic Parameters by Xie, Luhong, Deng, Erping, Gu, Dianjie, Wang, Weijie, Liu, Hao, Zhang, Ying, Huang, Yongzhang

“…Remaining useful lifetime (RUL) prediction of the power module is of great significance for performing thermal management and designing effective maintenance…”
Get full text

Sequential V ce ( T ) Method for the Accurate Measurement of Junction Temperature Distribution Within Press-Pack IGBTs by Zhang, Yiming, Deng, Erping, Zhao, Zhibin, Chen, Jie, Zhao, Yushan, Guo, Jiaqi, Cui, Xiang

“…In this article, a sequential V ce( T ) method with separated gate controller is proposed to measure the junction temperature distribution within press-pack…”
Get full text

Thermo-Hygroscopic-Mechanical Coupling Simulation Method for Power Electronics under Power Cycling Test by Wang, Yanhao, Deng, Erping, Wu, Tianhua, Zhang, Yiming, Xie, Luhong, Huang, Yongzhang

“…Recently, more attention has been paid to the humidity-related reliability of power electronics, such as lifetime, bond wire feet stress/strain, and thermal…”
Get full text

Effect of Threshold Voltage Hysteresis on Switching Characteristics of Silicon Carbide MOSFETs by Cai, Yumeng, Xu, Hao, Sun, Peng, Ke, Junji, Deng, Erping, Zhao, Zhibin, Li, Xuebao, Chen, Zhong

“…Threshold voltage (<inline-formula> <tex-math notation="LaTeX">{V}_{\text {TH}} </tex-math></inline-formula>) hysteresis affects the reliability of silicon…”
Get full text

Study on the Method to Measure Thermal Contact Resistance Within Press Pack IGBTs by Deng, Erping, Zhao, Zhibin, Zhang, Peng, Luo, Xiaochuan, Li, Jinyuan, Huang, Yongzhang

“…The accurate measurement of the thermal contact resistance between multilayers within press pack insulated gate bipolar transistors (PP IGBTs) is significant…”
Get full text

Difference between the PWM and Standard DC Power Cycling Tests Based on the Finite Element Simulation by Xie, Luhong, Wu, Lixin, Deng, Erping, Zhang, Ying, Zhao, Yushan, Huang, Yongzhang

“…PWM power cycling, which has complex control strategies and high testing costs, received a lot of attention in recent years due to the test conditions are…”
Get full text