Search Results - "Demina, S.E."

Numerical analysis of sapphire crystal growth by the Kyropoulos technique by Demina, S.E., Bystrova, E.N., Lukanina, M.A., Mamedov, V.M., Yuferev, V.S., Eskov, E.V., Nikolenko, M.V., Postolov, V.S., Kalaev, V.V.

“…A numerical model has been suggested to analyze processes occurring during sapphire crystal growth by the Kyropoulos technique. The model accounts for the…”
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Evolution of thermoelastic strain and dislocation density during sublimation growth of silicon carbide by Zhmakin, I.A., Kulik, A.V., Karpov, S.Yu, Demina, S.E., Ramm, M.S., Makarov, Yu.N.

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Melt Flow before Crystal Seeding in Cz Si Growth with Transversal MF by Iizuka, Masaya, Mukaiyama, Yuji, Demina, S.E., Kalaev, V.V.

“…Industrial Cz growth of Si crystal of 300mm and higher diameter usually requires DC magnetic fields (MFs) to suppress turbulence in the melt. We present 3D…”
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3D unsteady computer modeling of industrial scale Ky and Cz sapphire crystal growth by Demina, S.E., Kalaev, V.V.

“…In the present work, 3D features of melt convection during sapphire growth of 100 mm diameter Cz and of 200 mm diameter Ky crystals are studied. The approach…”
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Use of numerical simulation for growing high-quality sapphire crystals by the Kyropoulos method by Demina, S.E., Bystrova, E.N., Postolov, V.S., Eskov, E.V., Nikolenko, M.V., Marshanin, D.A., Yuferev, V.S., Kalaev, V.V.

“…In the present work, an advanced numerical model is suggested to analyze heat transfer and flow pattern in sapphire crystal growth by the Kyropoulos technique…”
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Computer modeling of diamond single crystal growth by the temperature gradient method in carbon-solvent system by Demina, S.E., Kalaev, V.V., Lysakovskyi, V.V., Serga, M.A., Kovalenko, T.V., Ivahnenko, S.A.

“…In the present work, numerical simulation has been applied to analyze diamond crystal growth. The computer model is based on an axisymmetric approach…”
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Optimization of sublimation growth of SiC bulk crystals using modeling by Ramm, M.S, Mokhov, E.N, Demina, S.E, Ramm, M.G, Roenkov, A.D, Vodakov, Yu.A, Segal, A.S, Vorob’ev, A.N, Karpov, S.Yu, Kulik, A.V, Makarov, Yu.N

“…Analysis of factors determining growth rate and shape of the crystallization front during sublimation growth of bulk SiC crystals is presented. For this…”
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