Search Results - "Demand, M"

Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction Tunnel-FETs by Vandooren, A., Leonelli, D., Rooyackers, R., Hikavyy, A., Devriendt, K., Demand, M., Loo, R., Groeseneken, G., Huyghebaert, C.

“…► The effect of trap-assisted tunneling on TFETs with SiGe hetero-junctions is analyzed. ► Temperature-dependent measurements are used to distinguish different…”
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Dry etching fin process for SOI finFET manufacturing: Transition from 32 to 22 nm node on a 6T-SRAM cell by Altamirano-Sánchez, E., Paraschiv, V., Demand, M., Boullart, W.

“…This work describes the main challenges encountered for patterning crystalline silicon (c-Si) fins when we scaled down the fin pitch from 124 to 90 nm on a…”
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Impact of O2-based plasma strip chemistries on the electrochemical behavior of TiN electrodes for biomedical applications by Collaert, N., Mannaert, G., Paraschiv, V., Goossens, D., Demand, M., Eberle, W.

“…[Display omitted] ► CMOS-based patterning of TiN electrodes can reduce the electrochemical characteristics. ► N2/H2-based chemistries are good alternatives to…”
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Dry etching fin process for SOI finFET manufacturing: Transition from 32 to 22nm node on a 6T-SRAM cell by Altamirano-Sánchez, E., Paraschiv, V., Demand, M., Boullart, W.

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Ferromagnetic resonance studies of nickel and permalloy nanowire arrays by Demand, M, Encinas-Oropesa, A, Kenane, S, Ebels, U, Huynen, I, Piraux, L

“…Arrays of nickel and permalloy nanowires have been studied by ferromagnetic resonance for frequencies ranging from 10 MHz up to 40 GHz using a micro-strip…”
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Challenges in using optical lithography for the building of a 22 nm node 6T-SRAM cell by Ercken, M., Altamirano-Sanchez, E., Baerts, C., Brus, S., De Backer, J., Delvaux, C., Demand, M., Horiguchi, N., Locorotondo, S., Vandeweyer, T., Veloso, A., Verhaegen, S.

“…FinFET devices are one of the most promising candidates for enabling SRAM scaling beyond the 32 nm technology node. This paper will describe the challenges…”
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Partner type and condom use by Macaluso, M, Demand, M J, Artz, L M, Hook, 3rd, E W

“…To examine the association between type of sexual partnership and condom use consistency. A prospective follow-up study of women attending two urban clinics…”
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Challenges in using optical lithography for the building of a 22nm node 6T-SRAM cell by Ercken, M., Altamirano-Sanchez, E., Baerts, C., Brus, S., De Backer, J., Delvaux, C., Demand, M., Horiguchi, N., Locorotondo, S., Vandeweyer, T., Veloso, A., Verhaegen, S.

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Effect of the pH on the microstructure and magnetic properties of electrodeposited cobalt nanowires by Encinas, A., Demand, M., George, J.-M., Piraux, L.

“…The effect of the electrolyte acidity, or pH, on the structural and magnetic properties of electrodeposited cobalt nanowires has been studied. The main result…”
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Vortex sates stability in circular Co(0001) dots by Buda, L D, Prejbeanu, I L, Demand, M, Ebels, U, Ounadjela, K

“…The three dimensional numerical micromagnetics was used to investigate the ground state magnetization of configurations for epitaxial Co(0001) dots. The vortex…”
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Magnetic field-induced instabilities and irreversible evolution in modulated ferromagnetic phases of cobalt films by Demand, M., Padovani, S., Hehn, M., Ounadjela, K., Bucher, J.P.

“…Ferromagnetic films of HCP cobalt with a thickness above 50 nm possess an out-of-plane magnetization. Magnetic force microscopy (MFM) is used to investigate…”
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Achieving low-VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack by Veloso, A., Yu, H.Y., Lauwers, A., Chang, S.Z., Adelmann, C., Onsia, B., Demand, M., Brus, S., Vrancken, C., Singanamalla, R., Lehnen, P., Kittl, J., Kauerauf, T., Vos, R., O′Sullivan, B.J., Van Elshocht, S., Mitsuhashi, R., Whittemore, G., Yin, K.M., Niwa, M., Hoffmann, T., Absil, P., Jurczak, M., Biesemans, S.

“…This work reports that introducing lanthanide in the gate dielectric or in the gate electrode results, in both cases, in large effective work function (eWF)…”
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Implementation of high- k and metal gate materials for the 45 nm node and beyond: gate patterning development by Beckx, S., Demand, M., Locorotondo, S., Henson, K., Claes, M., Paraschiv, V., Shamiryan, D., Jaenen, P., Boullart, W., Degendt, S., Biesemans, S., Vanhaelemeersch, S., Vertommen, J., Coenegrachts, B.

“…We report on gate patterning development for the 45 nm node and beyond. Both poly-Si and different metal gates in combination with medium- k and high- k…”
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Flexible and robust capping-metal gate integration technology enabling multiple-VT CMOS in MuGFETs by Veloso, A., Witters, L., Demand, M., Ferain, I., Son, N.J., Kaczer, B., Roussel, P.J., Simoen, E., Kauerauf, T., Adelmann, C., Brus, S., Richard, O., Bender, H., Conard, T., Vos, R., Rooyackers, R., Van Elshocht, S., Collaert, N., De Meyer, K., Biesemans, S., Jurczak, M.

“…We report, for the first time, a comprehensive study on various capping integration options for WF engineering in MuGFET devices with TiN gate electrode:…”
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Vortex states stability in circular Co(0001) dots by Buda, L.D., Prejbeanu, I.L., Demand, M., Ebels, U., Punadjela, K.

“…The possible magnetization configurations of individual circular Co(0001) dots are investigated by means of 3D micromagnetic simulations as a function of dot…”
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Structure and magnetic properties of epitaxial cobalt islands by Demand, M., Hehn, M., Stamps, R.L., Meny, C., Ounadjela, K.

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High yield sub-0.1µm2 6T-SRAM cells, featuring high-k/metal-gate finfet devices, double gate patterning, a novel fin etch strategy, full-field EUV lithography and optimized junction design & layout by Horiguchi, N, Demuynck, S, Ercken, M, Locorotondo, S, Lazzarino, F, Altamirano, E, Huffman, C, Brus, S, Demand, M, Struyf, H, De Backer, J, Hermans, J, Delvaux, C, Vandeweyer, T, Baerts, C, Mannaert, G, Truffert, V, Verluijs, J, Alaerts, W, Dekkers, H, Ong, P, Heylen, N, Kellens, K, Volders, H, Hikavyy, A, Vrancken, C, Rakowski, M, Verhaegen, S, Vandenberghe, G, Beyer, G, Lauwers, A, Absil, P, Hoffman, T, Ronse, K, Biesemans, S

“…We report high yield sub-0.1μm 2 SRAM cells using high-k/metal gate FinFET devices. Key features are (1) novel fin patterning strategy, (2) double gate…”
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Capping-metal gate integration technology for multiple-VT CMOS in MuGFETs by Veloso, A., Witters, L., Demand, M., Ferain, I., Son, N.J., Kaczer, B., Roussel, P.J., Adelmann, C., Brus, S., Richard, O., Bender, H., Conard, T., Vos, R., Rooyackers, R., Van Elshocht, S., Collaert, N., De Meyer, K., Biesemans, S., Jurczak, M.

“…In this paper, we investigate the potentialities and properties of HfSiO/MG/cap/TiN gate stack devices, first by identifying the impact of the TiN thickness…”
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A new complementary hetero-junction vertical Tunnel-FET integration scheme by Rooyackers, R., Vandooren, A., Verhulst, A. S., Walke, A., Devriendt, K., Locorotondo, S., Demand, M., Bryce, G., Loo, R., Hikavyy, A., Vandeweyer, T., Huyghebaert, C., Collaert, N., Thean, A.

“…This paper presents a new integration scheme for complementary hetero-junction vertical Tunnel FETs (VTFETs), whereby a sacrificial source layer is used during…”
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Integration challenges for multi-gate devices by Collaert, N., Brus, S., De Keersgieter, A., Dixit, A., Ferain, I., Goodwin, M., Kottantharayil, A., Rooyackers, R., Verheyen, P., Yim, Y., Zimmerman, P., Beckx, S., Degroote, B., Demand, M., Kim, M., Kunnen, E., Locorotondo, S., Mannaert, G., Neuilly, F., Shamiryan, D., Baerts, C., Ercken, M., Laidlcr, D., Leys, F., Loo, R., Lisoni, J., Snow, J., Vos, R., Boullart, W., Pollentier, I., De Gendt, S., De Meyer, K., Jurczak, M., Biescmans, S.

“…The FinFET transistor is the most widely studied and known multi-gate architecture that has the potential to be scaled to beyond the 45 nm technology node. In…”
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