Search Results - "Delaney, M.J."

On the use of intensity optical pumping and coherent population trapping techniques in the implementation of atomic frequency standards by Vanier, J., Levine, M.W., Janssen, D., Delaney, M.J.

“…The paper summarizes the relative advantages and disadvantages of coherent population trapping (CPT) or intensity optical pumping (IOP) for the implementation…”
Get full text

Practical realization of a passive coherent population trapping frequency standard by Vanier, J., Levine, M.W., Kendig, S., Janssen, D., Everson, C., Delaney, M.J.

“…The paper outlines the practical realization and characteristics of a small, totally autonomous passive frequency standard based on the coherent population…”
Get full text

The coherent population trapping passive frequency standard [Rb example] by Vanier, J., Levine, M.W., Janssen, D., Delaney, M.J.

“…Coherent population trapping in alkali atoms has opened a new avenue in the implementation of atomic frequency standards having promising characteristics for…”
Get full text

High-performance submicrometer AlInAs-GaInAs HEMT's by Mishra, U.K., Brown, A.S., Jelloian, L.M., Hackett, L.H., Delaney, M.J.

“…The performance of long (1.3- mu m) and short (0.3- mu m) gate-length Al/sub 0.48/In/sub 0.52/ As-Ga/sub 0.47/In/sub 0.53/ high-electron-mobility transistors…”
Get full text

AlInAs-GaInAs HEMT for microwave and millimeter-wave applications by Mishra, U.K., Brown, A.S., Delaney, M.J., Greiling, P.T., Krumm, C.F.

“…The status of lattice-matched high-electron-mobility transistors (HEMTs) and pseudomorphic AlInAs-GaInAs grown on In substrates is reviewed. The best…”
Get full text

Low-temperature buffer GaAs MESFET technology for high-speed integrated circuit applications by Delaney, M.J., Chou, C.S., Larson, L.E., Jensen, J.F., Deakin, D.S., Brown, A.S., Hooper, W.W., Thompson, M.A., McCray, L.G., Rosenbaum, S.E.

“…The fabrication of high-performance digital integrated circuits with low-temperature buffer (LTB) GaAs MESFET technology is presented. Individual 0.2- mu…”
Get full text

Robust Broadband (4 GHz - 16 GHz) GaN MMIC LNA by Micovic, M., Kurdoghlian, A., Lee, T., Hiramoto, R.O., Hashimoto, P., Schmitz, A., Milosavljevic, I., Willadsen, P.J., Wong, W.-S., Antcliffe, M., Wetzel, M., Hu, M., Delaney, M.J., Chow, D.H.

“…We report robust GaN MMIC LNA operating over 4 GHz-6 GHz frequency range. An FET biased in common-drain configuration is used on the second stage of the MMIC…”
Get full text

Ka-band MMIC power amplifier in GaN HFET technology by Micovic, M., Kurdoghlian, A., Moyer, H.P., Hashimoto, P., Schmitz, A., Milosavjevic, I., Willadesn, P.J., Wong, W.-S., Duvall, J., Hu, M., Delaney, M.J., Chow, D.H.

“…We report the development of Ka-band GaN MMIC power amplifiers in CPW and microstrip topologies. This is, to the best of our knowledge, the first demonstration…”
Get full text

Ka-band InP high electron mobility transistor monolithic microwave integrated circuit reliability by Paine, B.M, Wong, R.C, Schmitz, A.E, Walden, R.H, Nguyen, L.D, Delaney, M.J, Hum, K.C

“…The reliability of AlInAs/GaInAs high electron mobility transistor (HEMT) monolithic microwave integrated circuits on InP substrates from HRL Labs has been…”
Get full text

AlInAs/GaInAs HEMTs and HBTs for high speed circuits by Delaney, M.J.

“…High electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) fabricated in the AlInAs-GaInAs epitaxial material system are…”
Get full text

Low-temperature, high-current lifetests on InP-based HBT's by Paine, B.M., Thomas, S., Delaney, M.J.

“…Accelerated lifetests have been conducted on AlInAs-GaInAs HBT devices on InP wafers. Current densities were relatively high, while junction temperatures were…”
Get full text

Applications of Si/SiGe technology for high-speed communications systems by Larson, L.E., Delaney, M.J.

“…This paper will summarize recent developments in the field of Si/SiGe HBT technology for high-speed communications applications. This technology promises to…”
Get full text

GaN double heterojunction field effect transistor for microwave and millimeterwave power applications by Micovic, M., Hashimoto, P., Ming Hu, Milosavljevic, I., Duvall, J., Willadsen, P.J., Wong, W.-S., Conway, A.M., Kurdoghlian, A., Deelman, P.W., Jeong-S Moon, Schmitz, A., Delaney, M.J.

“…We report development of a novel AlGaN/GaN/AlGaN double heterojunction field effect tansistor (DHFET) with improved device performance over the conventional…”
Get full text

V-band high-efficiency high-power AlInAs/GaInAs/InP HEMT's by Matloubian, M., Jelloian, L.M., Brown, A.S., Nguyen, L.D., Larson, L.E., Delaney, M.J., Thompson, M.A., Rhodes, R.A., Pence, J.E.

“…The authors report on the state-of-the-art power performance of InP-based HEMTs (high electron mobility transistors) at 59 GHz. Using a 448- mu m-wide HEMT…”
Get full text

High-power V-band AlInAs/GaInAs on InP HEMTs by Matloubian, M., Brown, A.S., Nguyen, L.D., Melendes, M.A., Larson, L.E., Delancey, M.J., Pence, J.E., Rhodes, R.A., Thompson, M.A., Henige, J.A.

“…The DC and RF performance of delta -doped channel AlInAs/GaInAs on InP power high-electron-mobility transistors (HEMTs) are reported. A 450- mu m-wide device…”
Get full text

Q- and E-band cryogenically-coolable amplifiers using AlInAs/GaInAs/InP HEMTs by Pospieszalski, M.W., Lakatosh, W.J., Nguyen, L.D., Lui, M., Takyiu Lin, Minh Le, Thompson, M.A., Delaney, M.J.

“…Design, construction and performance of several cryogenically-coolable millimeter-wave amplifiers for radio astronomy applications, using AlInAs/GaInAs/InP…”
Get full text

Reliability of 100 nm silicon nitride capacitors in an InP HEMT MMIC process by Rowe, W.J., Paine, B.M., Schmitz, A.E., Walden, R.H., Delaney, M.J.

“…A reliability study has been conducted on capacitors made with 100 nm of silicon nitride, in an InP HEMT MMIC fabrication process. Special wafers were…”
Get full text

An ultrahigh-speed GaAs MESFET operational amplifier by Larson, L.E., Chou, C.-S., Delaney, M.J.

“…A wide-bandwidth GaAs MESFET operational amplifier is reported, with a 65-dB DC gain and a 20-GHz gain-bandwidth product at 500 MHz. The circuit uses a variety…”
Get full text

Correlation of frequency hopped VCO phase settling to varactor transient capacitance by Mallette, L.A., Delaney, M.J., Killman, S., Folk, T., Wong, B.

“…Microwave VCO and system designers should be aware that attoFarad level changes in the dynamic performance of a varactor can correlate to changes in system…”
Get full text

Very-low-temperature lifetests on InP-based HBTs-an update by Paine, B.M., Thomas, S., Delaney, M.J.

“…Summary form only given. It has been pointed out by Henderson (1996) and others that HBTs are vulnerable to recombination-enhanced defect reactions (REDRs),…”
Get full text