Search Results - "Delabie, A."

Frequent somatic mutations of KMT2D (MLL2) and CARD11 genes in primary cold agglutinin disease by Małecka, Agnieszka, Trøen, Gunhild, Tierens, Anne, Østlie, Ingunn, Małecki, Jędrzej, Randen, Ulla, Wang, Junbai, Berentsen, Sigbjørn, Tjønnfjord, Geir E., Delabie, Jan M. A.

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Structural Phases of Alkanethiolate Self-Assembled Monolayers (C1–12) on Cu[100] by Density Functional Theory by Clerix, J. J, Sanz-Matias, A, Armini, S, Harvey, J. N, Delabie, A

“…The structure and as such the properties of alkanethiolate self-assembled monolayers (SAMs) on metal surfaces depend on the surface structure, thiolate…”
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Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge by Agostinelli, G., Delabie, A., Vitanov, P., Alexieva, Z., Dekkers, H.F.W., De Wolf, S., Beaucarne, G.

“…Surface recombination velocities as low as 10 cm/s have been obtained by treated atomic layer deposition (ALD) of Al 2O 3 layers on p-type CZ silicon wafers…”
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Low‐grade follicular lymphoma with interferon regulatory factor‐4 rearrangement: Expanding the spectrum of interferon regulatory factor‐4‐rearranged lymphomas by Sakhdari, Ali, Sabatini, Peter J. B., Geevar, Tulasi, Zhang, Tong, Delabie, Jan M. A.

“…In recent years, the recognition of distinct lymphoma entities has expanded with advancements in molecular characterization. Large B‐cell Lymphoma with…”
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Capacitance-voltage characterization of GaAs–Al2O3 interfaces by Brammertz, G., Lin, H.-C., Martens, K., Mercier, D., Sioncke, S., Delabie, A., Wang, W. E., Caymax, M., Meuris, M., Heyns, M.

“…The authors apply the conductance method at 25 and 150°C to GaAs–Al2O3 metal-oxide-semiconductor devices in order to derive the interface state distribution…”
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Structural characterization of SnS crystals formed by chemical vapour deposition by NALIN MEHTA, A., ZHANG, H., DABRAL, A., RICHARD, O., FAVIA, P., BENDER, H., DELABIE, A., CAYMAX, M., HOUSSA, M., POURTOIS, G., VANDERVORST, W.

“…Summary The crystal and defect structure of SnS crystals grown using chemical vapour deposition for application in electronic devices are investigated. The…”
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Chemisorption of ALD precursors in and on porous low-k films by Verdonck, P., Delabie, A., Swerts, J., Farrell, L., Baklanov, M.R., Tielens, H., Van Besien, E., Witters, T., Nyns, L., Van Elshocht, S.

“…Schematic representation of the mechanism of formation of HfO2 in and on the porous film. Atomic layer deposition is a promising technique to deposit…”
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Interface control of high- k gate dielectrics on Ge by Caymax, M., Houssa, M., Pourtois, G., Bellenger, F., Martens, K., Delabie, A., Van Elshocht, S.

“…Important progress has been made in the passivation of Ge/gate dielectric interfaces. One important approach is by thermally oxidized GeO 2 interface and ALD…”
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Estimation of fixed charge densities in hafnium-silicate gate dielectrics by Kaushik, V.S., O'Sullivan, B.J., Pourtois, G., Van Hoornick, N., Delabie, A., Van Elshocht, S., Deweerd, W., Schram, T., Pantisano, L., Rohr, E., Ragnarsson, L.-A., De Gendt, S., Heyns, M.

“…In this paper, an effective technique and methodology for the estimation of fixed charge components in high-k stacks was demonstrated by varying both the SiO 2…”
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HfO2 as gate dielectric on Ge: Interfaces and deposition techniques by Caymax, M., Van Elshocht, S., Houssa, M., Delabie, A., Conard, T., Meuris, M., Heyns, M.M., Dimoulas, A., Spiga, S., Fanciulli, M., Seo, J.W., Goncharova, L.V.

“…To fabricate MOS gate stacks on Ge, one can choose from a multitude of metal oxides as dielectric material which can be deposited by many chemical or physical…”
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Primary MALT lymphoma of the breast: pathological and radiological characteristics by Shibahara, Yukiko, Delabie, Jan M. A., Kulkarni, Supriya, Grant, Allison, Prica, Anca, McCready, David R., Done, Susan J.

“…Purpose Primary Mucosa-associated lymphoid tissue (MALT) lymphoma is a rare diagnosis in the breast, and clinical diagnosis based on radiological features is…”
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Atomic-layer-deposited tantalum silicate as a gate dielectric for III–V MOS devices by Adelmann, C., Lin, D., Nyns, L., Schepers, B., Delabie, A., Van Elshocht, S., Caymax, M.

“…[Display omitted] ► An atomic-layer deposition process for TaSiO x thin films is described. ► SiCl 4 and TaCl 5 were used as precursors in combination with H2O…”
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Si cap passivation for Ge nMOS applications by Sioncke, S., Vanherle, W., Art, W., Ceuppens, J., Ivanov, Ts, Lin, D., Nyns, L., Delabie, A., Conard, T., Struyf, H., De Gendt, S., Caymax, M., Collaert, N., Thean, A.

“…•Si cap passivation on Ge shows low border trap response.•The Si cap passivation is also suitable for Ge nMOS applications.•Low Dit at Ec can be achieved by…”
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Atomic layer deposition of Al2O3 on S-passivated Ge by SIONCKE, S, CEUPPENS, J, LIN, D, NYNS, L, DELABIE, A, STRUYF, H, DE GENDT, S, MÜLLER, M, BECKHOFF, B, CAYMAX, M

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Electrical characteristics of Ge/GeOx(N)/HfO2 gate stacks by HOUSSA, M, DE JAEGER, B, DELABIE, A, VAN ELSHOCHT, S, AFANAS'EV, V. V, AUTRAN, J. L, STESMANS, A, MEURIS, M, HEYNS, M. M

“…The electrical properties of Ge--based metal--oxide--semiconductor devices with GeOx(N)/HfO2 gate stacks are investigated. The current--voltage characteristics…”
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Thin epitaxial Si films as a passivation method for Ge(1 0 0): Influence of deposition temperature on Ge surface segregation and the high-k/Ge interface quality by Leys, F.E., Bonzom, R., Kaczer, B., Janssens, T., Vandervorst, W., De Jaeger, B., Van Steenbergen, J., Martens, K., Hellin, D., Rip, J., Dilliway, G., Delabie, A., Zimmerman, P., Houssa, M., Theuwis, A., Loo, R., Meuris, M., Caymax, M., Heyns, M.M.

“…Epitaxial fully strained Si films are known to form an effective passivation of the Ge(1 0 0) surface. However, we show using low-energy secondary ion mass…”
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Immunoglobulin heavy and light chain gene features are correlated with primary cold agglutinin disease onset and activity by Małecka, Agnieszka, Trøen, Gunhild, Tierens, Anne, Østlie, Ingunn, Małecki, Jędrzej, Randen, Ulla, Berentsen, Sigbjørn, Tjønnfjord, Geir E, Delabie, Jan M A

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Nucleation of atomic-layer-deposited HfO2 films, and evolution of their microstructure, studied by grazing incidence small angle x-ray scattering using synchrotron radiation by Green, M. L., Allen, A. J., Li, X., Wang, J., Ilavsky, J., Delabie, A., Puurunen, R. L., Brijs, B.

“…We report the results of grazing incidence small angle x-ray scattering experiments on the nucleation and growth of atomic layer deposited HfO2 films. The…”
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Band offsets at interfaces of (100)InxGa1−xAs (0⩽x⩽0.53) with Al2O3 and HfO2 by Afanas’ev, V.V., Stesmans, A., Brammertz, G., Delabie, A., Sionke, S., O’Mahony, A., Povey, I.M., Pemble, M.E., O’Connor, E., Hurley, P.K., Newcomb, S.B.

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The Process of Mn(II) Incorporation into Aluminophosphate Zeotypes through High-Field ENDOR Spectroscopy and DFT Calculations by Arieli, D, Delabie, A, Groothaert, M, Pierloot, K, Goldfarb, D

“…High-field EPR and pulsed electron−nuclear double resonance (ENDOR) spectroscopies were used to investigate the formation of Mn−AlPO4-11, Mn−AlPO4-5, and…”
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