Search Results - "Del Rosario, D R"

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  1. 1

    An exploration of the applicability of the refined disease risk index and its integration with other independent risk factors for individualized prognostication by Maka, V V, Koh, L-P, Diong, C, Goh, Y-T, Gopalakrishnan, S, Ho, A, Hwang, W, Koh, M, Lim, F, Lim, Z-Y, Loh, Y, Poon, M, Del Rosario, D R, Tai, B-C, Tan, L-K, Tan, P, Linn, Y-C

    Published in Bone marrow transplantation (Basingstoke) (01-03-2017)
    “…The refined disease risk index (DRI) is a powerful prognostic model based solely on the disease type and stage for predicting survival outcomes of various…”
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    Journal Article
  2. 2

    Requirements for low intermodulation distortion in GaN-Al(x)Ga(1-x)N high electron mobility transistors: a modelassessment by Li, Tao, Joshi, R P, del Rosario, R D

    Published in IEEE transactions on electron devices (01-09-2002)
    “…A model analysis of the large-signal characteristics of GaN-Al(x)Ga(1-x)N high-electron mobility transistors (HEMTs) with particular emphasis on…”
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    Journal Article
  3. 3

    Requirements for low intermodulation distortion in GaN-Al(x)Ga(1-x)N high electron mobility transistors - A model assessment by Li, Tao, Joshi, R P, del Rosario, R D

    Published in IEEE transactions on electron devices (01-09-2002)
    “…A model analysis of the large-signal characteristics of GaN-Al(x)Ga(1-x)N HEMTs with particular emphasis on intermodulation distortion (IMD) and the…”
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    Journal Article
  4. 4

    Requirements for low intermodulation distortion in GaN-Al sub(x )Ga sub(1-x)N high electron mobility transistors: a model assessment by Li, Tao, Joshi, R P, del Rosario, RD

    Published in IEEE transactions on electron devices (01-09-2002)
    “…A model analysis of the large-signal characteristics of GaN-Al sub(x)Ga sub(1-x)N high-electron mobility transistors (HEMTs) with particular emphasis on…”
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    Journal Article