Search Results - "Dehimi, Lakhdar"

Analysis of Trapping Effects on the Forward Current-Voltage Characteristics of Al-Implanted 4H-SiC p-i-n Diodes by Megherbi, M. Larbi, Pezzimenti, Fortunato, Dehimi, Lakhdar, Saadoune, M. Achour, Della Corte, Francesco G.

“…The forward current-voltage characteristics (I F -V F ) of aluminum (Al)-implanted 4H-SiC p-i-n diodes are investigated by means of a numerical simulation…”
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Unveiling the structural and electrical features of Al/p-CZTS thin film schottky structure for photovoltaic application: a comparative parameter extraction study by Mansouri, Siham, Belgacem, H., Dehimi, Lakhdar, Bencherif, Hichem, Sasikumar, P., Syed, Asad, AL-Shwaiman, Hind A., Zeghdar, Kamal, Rao, S., Messina, G., Shahatha, Sara H., Mohammad, M. R.

“…To accurately determine the Schottky barrier characteristics and elucidate the consequent impacts, it is imperative to possess a comprehensive understanding of…”
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Numerical simulations of the electrical transport characteristics of a Pt/n-GaN Schottky diode by Bouzid, Fayçal, Pezzimenti, Fortunato, Dehimi, Lakhdar, Megherbi, Mohamed L., Della Corte, Francesco G.

“…In this paper, using a numerical simulator, we investigated the current-voltage characteristics of a Pt/n-GaN thin Schottky diode on the basis of the…”
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Simulation and analysis of the current-voltage-temperature characteristics of Al/Ti/4H-SiC Schottky barrier diodes by Zeghdar, Kamal, Dehimi, Lakhdar, Pezzimenti, Fortunato, Rao, Sandro, Della Corte, Francesco G.

“…The current-voltage characteristics of Al/Ti/4H-SiC Schottky barrier diodes have been investigated in the 85-445 K temperature range by means of a combined…”
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Performance evaluation of a GaSb thermophotovoltaic converter by Bouzid, Fayçal, Dehimi, Lakhdar

“…In recent years, Gallium Antimonide (GaSb), which has smallest bandgap among III-V semiconductors family, became the subject of extensive investigations in the…”
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Theoretical Simulation on Enhancing the Thin-Film Copper Zinc Tin Sulfide Solar Cell Performance Using MoS2, MoO x , and CuI as Efficient Hole Transport Layers by Mansouri, Siham, Dehimi, Lakhdar, Bencherif, Hichem, Pezzimenti, F., Zulfiqar, Muhammad, Alotaibi, Nouf H., Mohammad, Saikh, Haldhar, Rajesh, Darwish, Moustafa A., Hossain, M. Khalid

“…This study investigates, by means of numerical simulation, the potential enhancement of copper zinc tin sulfide (CZTS)-based solar cells through the…”
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Theoretical Simulation on Enhancing the Thin-Film Copper Zinc Tin Sulfide Solar Cell Performance Using MoS 2 , MoO x , and CuI as Efficient Hole Transport Layers by Mansouri, Siham, Dehimi, Lakhdar, Bencherif, Hichem, Pezzimenti, F., Zulfiqar, Muhammad, Alotaibi, Nouf H., Mohammad, Saikh, Haldhar, Rajesh, Darwish, Moustafa A., Hossain, M. Khalid

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Erratum to: Modelling of a Cd^sub 1−x^Zn^sub x^Te/ZnTe Single Quantum Well for Laser Diodes by Dehimi, Sai̇d, Dehimi, Lakhdar, Asar, Tarik, Özçelik, Süleyman

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Erratum to: Modelling of a Cd1−xZnxTe/ZnTe Single Quantum Well for Laser Diodes by Dehimi, Sai̇d, Dehimi, Lakhdar, Asar, Tarik, Özçelik, Süleyman

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Modelling of a Cd^sub 1-x^Zn^sub x^Te/ZnTe Single Quantum Well for Laser Diodes by Dehimi, Said, Dehimi, Lakhdar, Asar, Tarik, Özçelik, Süleyman

“…In this paper, the carrier density, temperature and quantum well width effect have been investigated for the optical gain for a Cd1-xZnxTe/ZnTe Zinc-blend…”
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Simulation Study of Carbon Vacancy Trapping Effect on Low Power 4H-SiC MOSFET Performance by Bencherif, Hichem, Dehimi, Lakhdar, Athamena, Nour eddine, Pezzimenti, Fortunato, Megherbi, Mohamed Larbi, Della Corte, Francesco Giuseppe

“…The carbon vacancy in 4H-SiC is an important recombination center of the minority carrier and a direct consequence of SiC-based device degradation. In 4H-SiC,…”
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Modelling of a Cd1−xZnxTe/ZnTe Single Quantum Well for Laser Diodes by Dehimi, Sai̇d, Dehimi, Lakhdar, Asar, Tarik, Özçelik, Süleyman

“…In this paper, the carrier density, temperature and quantum well width effect have been investigated for the optical gain for a Cd 1−x Zn x Te/ZnTe Zinc-blend…”
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Investigating Electrical Properties and Temperature Sensing Capabilities of Ti /4H-SiC Schottky Barrier Diodes by Zeghdar, Kamal, Mansouri, Siham, Dehimi, Lakhdar

“…The current-voltage (I-V) characteristics of Al/Ti/4H-SiC Schottky Barrier Diodes (SBDs) were analyzed through simulations using the Atlas-Silvaco software…”
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Inhomogeneous barrier height effect on the current-voltage characteristics of a W/4H-Sic Schottky diode by Kamal, Zeghdar, Lakhdar, Dehimi

“…Silicon carbide (SiC) is an important semiconductor material used in power electronics. Due to its high hardness and brittleness. The SILVACO-TCAD numerical…”
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Analytical model for the light trapping effect on ZnO:Al/c-Si/SiGe/c-Si solar cells with an optimized design by Bencherif, Hichem, Dehimi, Lakhdar, Pezzimenti, Fortunato, Yousfi, Abderrahim

“…This paper deals with the analytical investigation of light trapping effects on the performance of silicon-germanium (SiGe)-based solar cells in order to…”
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Comparison of Measurements of Charge Transfer Inefficiencies in a CCD With High-Speed Column Parallel Readout by Sopczak, Andre, Aoulmit, Salim, Bekhouche, Khaled, Bowdery, Chris, Buttar, Craig, Damerell, Chris, Djendaoui, Dahmane, Dehimi, Lakhdar, Rui Gao, Greenshaw, Tim, Koziel, Michal, Maneuski, Dzmitry, Nomerotski, Andrei, Sengouga, Nouredine, Stefanov, Konstantin, Tikkanen, Tuomo, Woolliscroft, Tim, Worm, Steve, Zhige Zhang

“…Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution…”
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Simulations of the Temperature Dependence of the Charge Transfer Inefficiency in a High-Speed CCD by Sopczak, A., Bekhouche, K.., Bowdery, C.., Damerell, C.., Davies, G.., Dehimi, L.., Greenshaw, T.., Koziel, M.., Stefanov, K.., Walder, J.., Woolliscroft, T.., Worm, S..

“…Results of detailed simulations of the charge transfer inefficiency of a prototype serial readout CCD chip are reported. The effect of radiation damage on the…”
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Modeling of Charge Transfer Inefficiency in a CCD With High-Speed Column Parallel Readout by Sopczak, A., Aoulmit, S., Bekhouche, K., Bowdery, C., Buttar, C., Damerell, C., Djendaoui, D., Dehimi, L., Greenshaw, T., Koziel, M., Maneuski, D., Nomerotski, A., Stefanov, K., Tikkanen, T., Woolliscroft, T., Worm, S.

“…Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution…”
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Analysis of Al2O3 high-k gate dielectric effect on the electrical characteristics of a 4H-SiC low-power MOSFET by Bencherif, Hichem, Yousfi, Abderrahim, Dehimi, Lakhdar, Pezzimenti, Fortunato, Corte, Francesco G. Della

“…The work investigates the ability of a high-k gate dielectric material (Al 2 O 3 ) in improving the electrical performance of a low voltage 4H-SiC-based…”
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Possible efficiency boosting of tandem solar cell by using single antireflection coating and BSF layer by Yousfi, Abderrahim, Bencherif, Hichem, Dehimi, Lakhdar, Pezzimenti, Fortunato, Saidi, Lamir, Abdi, Mohamed Amir, Meddour, Faycal, Khezzar, Djamel

“…In this work we examine via an analytical model both the antireflection coating and the back surface field ability in boosting the electrical and optical…”
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