Search Results - "Decker, D.R."

Determination of germanium ionization coefficients from small-signal IMPATT diode characteristics by Decker, D.R., Dunn, C.N.

“…Small-signal measurements of germanium IMPATT diode admittance in the frequency range from 2 to 8 GHz were taken for various current densities. These…”
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Magnetotransconductance profiling of mobility and doping in GaAs MESFETs by Kharabi, F., Decker, D.R.

“…Electron mobility profiles of GaAs MESFETs have been measured using the magnetotransconductance technique and corrected using in situ measurements of parasitic…”
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Determination of germanium ionization coefficients from small signal IMPATT diode characteristics by Decker, D.R., Dunn, C.N.

“…Small signal measurements of germanium IMPATT diode admittance in the frequency range from 2 to 8 GHz were taken as a function of current density. These…”
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Multichip MMIC package for X and K/sub a/ bands by Decker, D.R., Olson, H.M., Tatikola, R., Gutierrez, R., Mysoor, N.R.

“…A new multichip monolithic microwave integrated circuit (MMIC) package operable to X and K/sub a/ bands has been developed and tested. This package provides…”
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A Monolithic GaAs 0.1 to 10 GHz Amplifier by Petersen, W.C., Decker, D.R., Gupta, A.K., Dully, J., Ch'en, D.R.

“…A monolithic GaAs 4-stage broadband amplifier including active input and output matching has been fabricated on a 2.5 mm square chip. Gain, noise, and VSWR…”
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A Monolithic GaAs DC to 2-GHz Feedback Amplifier by Wendall, C.P., Gupta, A., Decker, D.R.

“…Resistive feedback in low-frequency FET amplifiers is an attractive method of simultaneously attaining gain flatness and excellent input-output VSWR over wide…”
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Yield Considerations for Ion Implanted GaAs MMICs by Gupta, A.K., Petersen, W.C., Decker, D.R.

“…An ion implantation based process is described for fabricating GaAs Monolithic Microwave Integrated Circuits (MMICS) incorporating active devices, RF circuitry…”
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A Monolithic GaAs DC to 2 GHz Feedback Amplifier by Petersen, W.C., Gupta, A.K., Decker, D.R.

“…Resistive feedback in low frequency FET amplifiers is an attractive method of simultaneously attaining gain flatness and excellent input/output VSWR over wide…”
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Yield Considerations for Ion-Implanted GaAs MMIC's by Gupta, A., Petersen, W.C., Decker, D.R.

“…An ion-implantation based process is described for fabricating GrAs monolithic microwave integrated circuits (MMIC's) incorporating active devices ,RF…”
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IMPATT diode quasi-static large-signal model by Decker, D.R.

“…A quasi-static large-signal model of an IMPATT diode with general doping profile is derived. The numerical solution of this model has been implemented in a…”
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A monolithic GaAs DC to 2-GHz feedback amplifier by Petersen, W.C., Gupta, A., Decker, D.R.

“…Resistive feedback in low-frequency FET amplifiers is an attractive method of simultaneously attaining gain flatness and excellent input-output VSWR over wide…”
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Yield considerations for ion-implanted GaAs MMIC's by Gupta, A., Petersen, W.C., Decker, D.R.

“…An ion-implantation based process is described for fabricating GaAs monolithic microwave integrated circuits (MMIC's) incorporating active devices, RF…”
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A diagnostic pattern for GaAs FET material development and process monitoring by Immorlica, A.A., Decker, D.R., Hill, W.A.

“…A compact diagnostic pattern containing test structures for the measurement of key materials and device processing parameters is presented. The test devices…”
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A thick film package for microwave ICs by Gutierrez, R., Olson, H.M., Decker, D.R.

“…A rugged, inexpensive two-port package for mounting a cascade of monolithic microwave ICs was developed. The package consists of two layers of alumina on which…”
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A Monolithic GaAs I.F. Amplifier for Integrated Receiver Applications by Decker, D.R., Gupta, A.K., Petersen, W., Ch'en, D.R.

“…A monolithic GaAs integrated amplifier has been constructed for the 500 to 1000 MHz intermediate frequency band. The amplifier provides 8.0 /spl plusmn/ 1.5 dB…”
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An 8 Ghz MMIC Preamplifier by Decker, D.R., Gupta, A.K., Petersen, W.C., Ch'en, D.R.

“…A monolithic GaAs low-noise 8 GHz preamplifier has been designed and fabricated on a 2.0 mm square chip. Measured gain, VSWR,and noise performance are…”
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Determination of germanium ionization coefficients from small signal IMPATT diode characteristics by Decker, D.R., Dunn, C.N.

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High-power IMPATT diodes on diamond heat sinks by Decker, D.R., Schorr, A.J.

“…This paper presents calculated and experimental results which demonstrate that the performance of IMPATT diodes is significantly improved by the use of diamond…”
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Progress in broad-band GaAs monolithic amplifiers by Gupta, A.K., Higgins, J.A., Decker, D.R.

“…Monolithic microwave amplifiers showing gain from 0 to 8 GHz have been fabricated on semi-insulating GaAs. These amplifiers utilized MESFET devices with gate…”
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Large-Signal Silicon and Germanium Avalanche-Diode Characteristics by Decker, D.R., Dunn, C.N., Frank, R.L.

“…A technique for measurement of the large-signal single-frequency microwave amplifier admittance of avalanche diodes is described, and results are presented for…”
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