Spin Transfer on Low Resistance-Area MgO-Based Magnetic Tunnel Junctions Prepared by Ion Beam Deposition

This work reports spin transfer switching results on nano-sized MgO-based magnetic tunnel junctions (MTJs) prepared by Ion Beam deposition (IBD). Nano-devices with areas down to 60 nm × 180 nm have been successfully nanofabricated. The MgO deposition conditions were optimized aiming at reducing the...

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Bibliographic Details
Published in:IEEE transactions on magnetics Vol. 46; no. 6; pp. 2002 - 2004
Main Authors: Yang, Jie, Macedo, Rita J., Debs, Mariam G., Ferreira, Ricardo, Cardoso, Susana, Freitas, Paulo J. P., Teixeira, José M., Ventura, João O.
Format: Journal Article Conference Proceeding
Language:English
Published: New York, NY IEEE 01-06-2010
Institute of Electrical and Electronics Engineers
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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Summary:This work reports spin transfer switching results on nano-sized MgO-based magnetic tunnel junctions (MTJs) prepared by Ion Beam deposition (IBD). Nano-devices with areas down to 60 nm × 180 nm have been successfully nanofabricated. The MgO deposition conditions were optimized aiming at reducing the resistance-area (RA) product, and RA value as low as 0.8 ¿ ¿m 2 could be successfully obtained for 0.75 nm thick MgO barriers. The average switching current density of 5.45 × 10 6 A/cm 2 can be obtained for a MTJ nanopillar with the dimension of 225 nm × 730.3 nm with low RA of 1.47 ¿ ¿m 2 .
Bibliography:ObjectType-Article-2
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ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2010.2041753