Search Results - "DeWinter, J.C."

IIA-5 minority carrier velocity field characteristics for lightly doped p-In 0.53 Ga 0.47 As photoconductive detectors by Degani, J., Leheny, R.F., Nahory, R.E., Heritage, J.P., DeWinter, J.C.

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IV-5 Efficient LPE-grown In x Ga 1-x As LED's and laser diodes at 0.9- to 1.1-µm wavelengths by Nahory, R.E., Pollack, M.A., DeWinter, J.C.

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IV-5 Efficient LPE-grown InxGa1-xAs LED's and laser diodes at 0.9- to 1.1-µm wavelengths by Nahory, R.E., Pollack, M.A., DeWinter, J.C.

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A long-wavelength, annular In 0.53 Ga 0.47 As p-i-n photodetector by Forrest, S.R., Kohl, P., Panock, R., DeWinter, J.C., Nahory, R.E., Yanowski, E.

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An In 0.53 Ga 0.47 As p-channel MOSFET with plasma-grown native oxide insulated gate by Liao, A.S.H., Tell, B., Leheny, R.F., Nahory, R.E., DeWinter, J.C., Martin, R.J.

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IIA-5 efficient GaAs1-xSbx/AlyGa1-yAs1-xSbxdouble heterostructure LEDs in the 1-µm wavelength region by Nahory, R.E., Pollack, M.A., Beebe, E.D., DeWinter, J.C.

“…Summary form only. An abstract of the above-titled article taken from the Device Research Conference (24-26 June 1975, Carleton University, Ottawa, Ont.,…”
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IIA-5 efficient GaAs 1-x Sb x /Al y Ga 1-y As 1-x Sb x double heterostructure LEDs in the 1-µm wavelength region by Nahory, R.E., Pollack, M.A., Beebe, E.D., DeWinter, J.C.

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TA-B4 In 0.53 Ga 0.47 As integrated PIN/FET photo receiver by Leheny, R.F., Nahory, R.E., Pollack, M.A., Ballman, A.A., Beebe, E.D., DeWinter, J.C., Martin, R.J.

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An In 0.53 Ga 0.47 As junction field-effect transistor by Leheny, R.F., Nahory, R.E., Pollack, M.A., Ballman, A.A., Beebe, E.D., DeWinter, J.C., Martin, R.J.

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IIA-5 minority carrier velocity field characteristics for lightly doped p-In0.53Ga0.47As photoconductive detectors by Degani, J., Leheny, R.F., Nahory, R.E., Heritage, J.P., DeWinter, J.C.

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An In0.53Ga0.47As junction field-effect transistor by Leheny, R.F., Nahory, R.E., Pollack, M.A., Ballman, A.A., Beebe, E.D., DeWinter, J.C., Martin, R.J.

“…Preliminary results are reported for the operation of a junction field-effect transistor fabricated from In 0.53 Ga 0.47 As grown lattice-matched to an InP:Fe…”
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A long-wavelength, annular In0.53Ga0.47As p-i-n photodetector by Forrest, S.R., Kohl, P.A., Panock, R., DeWinter, J.C., Nahory, R.E., Yanowski, E.

“…We describe a novel, annular In 0.53 Ga 0.47 As p-in photodiode sensitive to λ = 1.7 µm for use as a fiber tap or front-face laser monitor. The diode has a 150…”
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An In0.53Ga0.47As p-channel MOSFET with plasma-grown native oxide insulated gate by Liao, A.S.H., Tell, B., Leheny, R.F., Nahory, R.E., DeWinter, J.C., Martin, R.J.

“…We describe the operation of an In 0.53 Ga 0.47 As p-channel inversion mode MOSFET with plasma grown native oxide insulated gate. This device exhibits a…”
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An integrated PIN/JFET photoreceiver for long wavelength optical systems by Leheny, R.F., Nahory, R.E., DeWinter, J.C., Martin, R.J., Beebe, E.D.

“…We demonstrate the operation of In 0.53 Ga 0.47 As integrated PIN/FET devices with transconductance of 60 mS/mm. An analytic model gives a good description of…”
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In0.53Ga0.47As/Si3N4n-channel and p-channel inversion mode MISFET's by Liao, A.S.H., Leheny, R.F., Nahory, R.E., DeWinter, J.C., Martin, R.J.

“…We describe the operation of both n-channel and p-channel Si 3 N 4 insulated gate In 0.53 Ga 0.47 As inversion mode MISFET's. These devices exhibit a maximum…”
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TP-C5 the wavelength dependence of InGaAsP laser threshold characteristics by Nahory, R.E., Pollack, M.A., DeWinter, J.C.

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TA-B4 In0.53Ga0.47As integrated PIN/FET photo receiver by Leheny, R.F., Nahory, R.E., Pollack, M.A., Ballman, A.A., Beebe, E.D., DeWinter, J.C., Martin, R.J.

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