Search Results - "DeWinter, J C"

Buried heterojunction electroabsorption modulator by Campbell, J. C., DeWinter, J. C., Pollack, M. A., Nahory, R. E.

“…We describe the successful operation of a buried heterojunction electroabsorption modulator. This modulator, fabricated from AlyGa1−yAs1−xSbx/GaAs1−x′Sbx′, is…”
Get full text

An experimental low-loss single-wavelength bidirectional lightwave link by Panock, R., Forrest, S., Kohl, P., DeWinter, J., Nahory, R., Yanowski, E.

“…We describe the perofrmance of a low-loss couplerless bi-directional transmission experiment which operates at a single wavelength. The system is unique in…”
Get full text

Compositional dependence of the electron mobility in Inl-x Gax Asy P1-y by Leheny, R. F., Ballman, A. A., DeWinter, J. C., Nahory, R. E., Pollack, M. A.

Get full text

TP-C5 the wavelength dependence of InGaAsP laser threshold characteristics by Nahory, R.E., Pollack, M.A., DeWinter, J.C.

Get full text

Efficient LPE-Grown InxGa1-xAs LEDs (Light-Emitting Diodes) at 1-1.1-MuM Wavelengths by Nahory, R E, Pollack, M A, DeWinter, J C

Get full text

An In0.53Ga0.47As junction field-effect transistor by Leheny, R.F., Nahory, R.E., Pollack, M.A., Ballman, A.A., Beebe, E.D., DeWinter, J.C., Martin, R.J.

“…Preliminary results are reported for the operation of a junction field-effect transistor fabricated from In 0.53 Ga 0.47 As grown lattice-matched to an InP:Fe…”
Get full text

A long-wavelength, annular In0.53Ga0.47As p-i-n photodetector by Forrest, S.R., Kohl, P.A., Panock, R., DeWinter, J.C., Nahory, R.E., Yanowski, E.

“…We describe a novel, annular In 0.53 Ga 0.47 As p-in photodiode sensitive to λ = 1.7 µm for use as a fiber tap or front-face laser monitor. The diode has a 150…”
Get full text

Electron transport in In0.53Ga0.47As/plasma oxide inversion layers by LIAO, A. S. H, LEHENY, R. F, CHANG, T. Y, CARIDI, E. A, BEEBE, E, DE WINTER, J. C

“…In this letter we report the first direct measurements of low field transport properties for inversion layer electrons in an InGaAs native oxide…”
Get full text

High performance GaInAsSb/GaSb p - n photodiodes for the 1.8–2.3 μm wavelength range by Srivastava, A. K., DeWinter, J. C., Caneau, C., Pollack, M. A., Zyskind, J. L.

“…GaInAsSb/GaSb p-n heterojunction photodiodes prepared by liquid phase epitaxy are described. The low net acceptor concentration obtained by Te compensation of…”
Get full text

Liquid phase epitaxial Ga1-xInxAsySb1-y lattice-matched to (100) GaSb over the 1.71 to 2.33μm wavelength range by DeWinter, J. C., Pollack, M. A, Srivastava, A. K., Zyskind, J. L.

Get full text

High performance GaInAsSb/GaAb p-n photodiodes for the 1.8-2.3 μm wavelength range by SRIVASTAVA, A. K, DEWINTER, J. C, CANEAU, C, POLLACK, M. A, ZYSKIND, J. L

Get full text

Fast photoconductive detector using p -In0.53Ga0.47As with response to 1.7 μm by Degani, J., Leheny, R. F., Nahory, R. E., Pollack, M. A., Heritage, J. P., DeWinter, J. C.

“…Photoconductive detectors, fabricated from p-type In0.53Ga0.47As using strip-line techniques, exhibit rise and fall times of 45 and 70 psec FWHM. This…”
Get full text

Liquid phase epitaxial Ga1-xInxAsySbl-y lattice-matched to (100) GaSb over the 1,71 to 2,33 μm wavelength range by DEWINTER, J. C, POLLACK, M. A, SRIVASTAVA, A. K, ZYSKIND, J. L

Get full text

A long-wavelength, annular In(0.53)Ga(0.47)As p-i-n photodetector by rest, S R, Kohl, P A, Panock, R, DeWinter, J C, Nahory, R E, Yanowski, E

“…We describe a novel, annular In(0.53)Ga(0.47)As p-in photodiode sensitive to lambda = 1.7 mum for use as a fiber tap or front-face laser monitor. The diode has…”
Get full text

Electron transport in In(0.53)Ga(0.47) As/plasma oxide inversion layers by Liao, A S H, Tell, B, Leheny, R F, Chang, T Y, Caridi, E A, Beebe, E, DeWinter, J C

“…In this letter the first direct measurements of low field transport properties for inversion layer electrons in an InGaAs native oxide…”
Get full text

IIA-5 minority carrier velocity field characteristics for lightly doped p-In(0.53)Ga(0.47)As photoconductive detectors by Degani, J, Leheny, R F, Nahory, R E, Heritage, J P, DeWinter, J C

Get full text

Efficient LPE-grown In x Ga1 − x As LEDs at 1–1.1-μm wavelengths by Nahory, R. E., Pollack, M. A., DeWinter, J. C.

“…We report the growth and fabrication of LPE multilayer Inx Ga1 −x As homojunction LEDs. Junction edge emission in the 1.0–1.1-μm wavelength range was obtained…”
Get full text

IV-5 Efficient LPE-grown In(x < /inf > Ga(1-x < /inf > As LED' s and laser diodes at 0.9-to 1.1-mu m wavelengths by Nahory, R E, Pollack, M A, DeWinter, J C

Get full text

Characterization of In sub(0) sub(.) sub(5) sub(3)Ga sub(0) sub(.) sub(4) sub(7) As Photodiodes Exhibiting Low Current and Low Junction Capacitance by Leheny, R F, Nahory, R E, Beebe, E D, DeWinter, J C, Pollack, M A

“…The preparation and properties of grown p-n homojunction In sub(0) sub(.) sub(5) sub(3)Ga sub(0) sub(.) sub(4) sub(7)As photodiodes for operation in the 1-1.7…”
Get full text

An In(0.53)Ga(0.47)As p-channel MOSFET with plasma-grown native oxide insulated gate by Liao, A S H, Tell, B, Leheny, R F, Nahory, R E, DeWinter, J C, Martin, R J

“…We describe the operation of an In(0.53)Ga(0.47)As p-channel inversion mode MOSFET with plasma grown native oxide insulated gate. This device exhibits a…”
Get full text