Search Results - "De Michielis, M."

Coherent tunneling by adiabatic passage of an exchange-only spin qubit in a double quantum dot chain by Ferraro, E., De Michielis, M., Fanciulli, M., Prati, E.

“…A scheme based on coherent tunneling by adiabatic passage (CTAP) of exchange-only spin qubit quantum states in a linearly arranged double quantum dot chain is…”
Get full text

Semiconducting double-dot exchange-only qubit dynamics in the presence of magnetic and charge noises by Ferraro, E., Fanciulli, M., De Michielis, M.

“…The effects of magnetic and charge noises on the dynamical evolution of the double-dot exchange-only qubit (DEOQ) is theoretically investigated. The DEOQ…”
Get full text

Controlled-NOT gate sequences for mixed spin qubit architectures in a noisy environment by Ferraro, E., Fanciulli, M., De Michielis, M.

“…Explicit controlled-NOT gate sequences between two qubits of different types are presented in view of applications for large-scale quantum computation. Here,…”
Get full text

Gate fidelity comparison in semiconducting spin qubit implementations affected by control noises by Ferraro, E, Fanciulli, M, De Michielis, M

“…A comparison of gate fidelities between different spin qubit types defined in quantum dots and a donor under different control errors is reported. We studied…”
Get full text

Valley blockade and multielectron spin-valley Kondo effect in silicon by Crippa, A., Tagliaferri, M. L. V., Rotta, D., De Michielis, M., Mazzeo, G., Fanciulli, M., Wacquez, R., Vinet, M., Prati, E.

“…We report on the valley blockade and the multie-lectron Kondo effect generated by an impurity atom in a silicon nanofield effect device. According to the…”
Get full text

A compact T-shaped nanodevice for charge sensing of a tunable double quantum dot in scalable silicon technology by Tagliaferri, M.L.V., Crippa, A., De Michielis, M., Mazzeo, G., Fanciulli, M., Prati, E.

“…We report on the fabrication and the characterization of a tunable complementary-metal oxide semiconductor (CMOS) system consisting of two quantum dots and a…”
Get full text

Analytical Models for the Insight Into the Use of Alternative Channel Materials in Ballistic nano-MOSFETs by De Michielis, M., Esseni, D., Driussi, F.

“…This paper presents new analytical derivations for the ballistic current of n-MOSFETs as a function of the transport direction, of the properties of the…”
Get full text

Semiclassical Modeling of Quasi-Ballistic Hole Transport in Nanoscale pMOSFETs Based on a Multi-Subband Monte Carlo Approach by De Michielis, M., Esseni, D., Palestri, P., Selmi, L.

“…This paper presents a new self-consistent multi-subband Monte Carlo (MSMC) simulator designed to investigate quasi-ballistic transport in nanoscale pMOSFETs…”
Get full text

A Semianalytical Description of the Hole Band Structure in Inversion Layers for the Physically Based Modeling of pMOS Transistors by De Michielis, M., Esseni, D., Tsang, Y.L., Palestri, P., Selmi, L., O'Neill, A.G., Chattopadhyay, S.

“…This paper presents a new semianalytical model for the energy dispersion of the holes in the inversion layer of pMOS transistors. The wave vector dependence of…”
Get full text

Effective Hamiltonian for the hybrid double quantum dot qubit by Ferraro, E., De Michielis, M., Mazzeo, G., Fanciulli, M., Prati, E.

“…Quantum dot hybrid qubits formed from three electrons in double quantum dots represent a promising compromise between high speed and simple fabrication for…”
Get full text

Semi-classical transport modelling of CMOS transistors with arbitrary crystal orientations and strain engineering by Esseni, D, Conzatti, F, De Michielis, M, Serra, N, Palestri, P, Selmi, L

“…This paper reviews the basic methodologies and models used in the semi-classical modelling of CMOS transistors in the framework of the nowadays generalized…”
Get full text

Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study by Conzatti, F., De Michielis, M., Esseni, D., Palestri, P.

“…This paper presents a Multi-Subband Monte Carlo study of the drain current improvements in uniaxially, compressively strained (0 0 1)/[1 1 0] p-MOSFETs and…”
Get full text

Trade-off between electron velocity and density of states in ballistic nano-MOSFETs by De Michielis, M., Esseni, D., Driussi, F.

“…This paper presents an analytical model for the on-current (I/sub ON/) of ballistic MOSFETs that points out how the reduction of the in-plane masses implies a…”
Get full text

Effective Hamiltonian for two interacting double-dot exchange-only qubits and their controlled-NOT operations by Ferraro, E., De Michielis, M., Fanciulli, M., Prati, E.

“…Double-dot exchange-only qubit represents a promising compromise between high speed and simple fabrication in solid-state implementations. A couple of…”
Get full text

Few electron limit of n-type metal oxide semiconductor single electron transistors by Prati, Enrico, De Michielis, Marco, Belli, Matteo, Cocco, Simone, Fanciulli, Marco, Kotekar-Patil, Dharmraj, Ruoff, Matthias, Kern, Dieter P, Wharam, David A, Verduijn, Jan, Tettamanzi, Giuseppe C, Rogge, Sven, Roche, Benoit, Wacquez, Romain, Jehl, Xavier, Vinet, Maud, Sanquer, Marc

“…We report the electronic transport on n-type silicon single electron transistors (SETs) fabricated in complementary metal oxide semiconductor (CMOS)…”
Get more information

On the Surface-Roughness Scattering in Biaxially Strained n- and p-MOS Transistors by De Michielis, M., Conzatti, F., Esseni, D., Selmi, L.

“…Electron- and hole-mobility enhancements in biaxially strained metal-oxide-semiconductor transistors are still a matter for active investigation, and this…”
Get full text

Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations by Conzatti, F, Serra, N, Esseni, D, De Michielis, M, Paussa, A, Palestri, P, Selmi, L, Thomas, S M, Whall, T E, Leadley, D, Parker, E H C, Witters, L, Hytch, M J, Snoeck, E, Wang, T J, Lee, W C, Doornbos, G, Vellianitis, G, van Dal, M J H, Lander, R J P

“…This study combines direct measurements of strain, electrical mobility measurements, and a rigorous modeling approach to provide insights about strain-induced…”
Get full text

Bandwidth-limited and noisy pulse sequences for single qubit operations in semiconductor spin qubits by Ferraro, E, De Michielis, M

“…Entropy 21 (11), 1042 (2019) Spin qubits are very valuable and scalable candidates in the area of quantum computation and simulation applications. In the last…”
Get full text

Phonon-induced relaxation and decoherence times of the hybrid qubit in silicon quantum dots by Ferraro, E, Fanciulli, M, De Michielis, M

“…Phys. Rev. B 100, 035310 (2019) We study theoretically the phonon-induced relaxation and decoherence processes in the hybrid qubit in silicon. Hybrid qubit…”
Get full text

Gate fidelity comparison in semiconducting spin qubit implementations affected by control noises by Ferraro, E, Fanciulli, M, De Michielis, M

“…Journal of Physics Communications 2, 115022 (2018) A comparison of gate fidelities between different spin qubit types defined in quantum dots and a donor under…”
Get full text